CY7C0837AV, CY7C0830AV

CY7C0831AV, CY7C0832AV

CY7C0832BV, CY7C0833AV

FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM

Features

True Dual-Ported Memory Cells that Allow Simultaneous Access of the Same Memory Location

Synchronous Pipelined Operation

Family of 512 Kbit, 1 Mbit, 2 Mbit, 4 Mbit, and 9 Mbit Devices

Pipelined Output Mode Allows Fast Operation

0.18 micron CMOS for Optimum Speed and Power

High Speed Clock to Data Access

3.3V Low Power

Active as Low as 225 mA (typ)

Standby as Low as 55 mA (typ)

Mailbox Function for Message Passing

Global Master Reset

Separate Byte Enables on Both Ports

Commercial and Industrial Temperature Ranges

IEEE 1149.1 Compatible JTAG Boundary Scan

144-Ball FBGA (13 mm × 13 mm) (1.0 mm pitch)

120 TQFP (14 mm x 14 mm x 1.4 mm)

Pb-Free Packages Available

Counter Wrap Around Control

Internal Mask Register Controls Counter Wrap Around

Counter-Interrupt Flags to Indicate Wrap Around

Memory Block Retransmit Operation

Counter Readback on Address Lines

Mask Register Readback on Address Lines

Dual Chip Enables on Both Ports for Easy Depth Expansion

Table 1. Product Selection Guide

Functional Description

The FLEx18™ family includes 512 Kbit, 1 Mbit, 2 Mbit, 4 Mbit, and 9 Mbit pipelined, synchronous, true dual port static RAMs that are high speed, low power 3.3V CMOS. Two ports are provided, permitting independent, simultaneous access to any location in memory. The result of writing to the same location by more than one port at the same time is undefined. Registers on control, address, and data lines allow for minimal setup and hold time.

During a Read operation, data is registered for decreased cycle time. Each port contains a burst counter on the input address register. After externally loading the counter with the initial address, the counter increments the address internally (more details to follow). The internal Write pulse width is independent of the duration of the R/W input signal. The internal Write pulse is self-timed to allow the shortest possible cycle times.

A HIGH on CE0 or LOW on CE1 for one clock cycle powers down the internal circuitry to reduce the static power consumption. One cycle with chip enables asserted is required to reactivate the outputs.

Additional features include: readback of burst-counter internal address value on address lines, counter-mask registers to control the counter wrap around, counter interrupt (CNTINT) flags, readback of mask register value on address lines, retransmit functionality, interrupt flags for message passing, JTAG for boundary scan, and asynchronous Master Reset (MRST).

The CY7C0833AV device in this family has limited features. See Address Counter and Mask Register Operations [16] on page 6 for details.

Density

512 Kbit

1 Mbit

2 Mbit

4 Mbit

9 Mbit

(32K x 18)

(64K x 18)

(128K x 18)

(256K x 18)

(512K x 18)

 

Part Number

CY7C0837AV

CY7C0830AV

CY7C0831AV

CY7C0832AV

CY7C0832BV [1]

CY7C0833AV

Maximum Speed (MHz)

167

167

167

167

133

133

 

 

 

 

 

 

 

Maximum Access Time -

4.0

4.0

4.0

4.0

4.4

4.7

Clock to Data (ns)

 

 

 

 

 

 

Typical Operating

225

225

225

225

225

270

Current (mA)

 

 

 

 

 

 

Package

144 FBGA

120 TQFP

120 TQFP

120 TQFP

120 TQFP

144 FBGA

 

 

144 FBGA

144 FBGA

144 FBGA

 

 

Note

1. CY7C0832AV and CY7C0832BV are functionally identical.

Cypress Semiconductor Corporation • 198 Champion Court

San Jose, CA 95134-1709

408-943-2600

Document #: 38-06059 Rev. *S

 

Revised March 03, 2009

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Cypress CY7C0832BV, CY7C0837AV, CY7C0833AV, CY7C0830AV, CY7C0832AV, CY7C0831AV manual Features, Functional Description

CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, CY7C0832AV specifications

Cypress Semiconductor, a leader in innovative semiconductor solutions, has developed a range of high-performance SRAM (Static Random Access Memory) products, including the CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV. These devices cater to various applications requiring fast, reliable memory storage.

One of the main features of these SRAMs is their speed. They offer fast access times, which range from 10 to 15 nanoseconds. This rapid access is critical for applications where speed is essential, such as high-speed networking and telecommunications equipment, automotive systems, and industrial controls. The CY7C0837AV, for instance, boasts a 1 Mbit memory capacity, making it suitable for applications requiring a larger data buffer.

Another notable feature of these devices is their low power consumption. The SRAMs are designed to operate at low voltages, typically around 3.3V, which greatly reduces the overall power requirements. This characteristic is particularly advantageous for battery-operated devices and portable electronics, as it extends battery life and improves energy efficiency.

Cypress's SRAM offerings incorporate advanced technologies like asynchronous read and write operations, which enable users to access memory without the need for a clock signal. This asynchronous nature allows for simpler system designs and integration, significantly reducing component count and complexity.

In terms of packaging, these SRAMs are available in various formats, including standard DIP and surface-mount options, facilitating easy integration into a range of printed circuit boards. Their footprint and compatibility with existing designs ensure they can be utilized in both new developments and legacy system enhancements.

The CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV also support burst mode operations, allowing for faster sequential data access. This feature enhances performance in applications that require continuous data streams, such as video processing and signal processing tasks.

In summary, the Cypress CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV SRAMs provide a combination of high speed, low power consumption, and versatile packaging options. Their advanced technologies and characteristics make them ideal for a wide range of applications, from automotive to industrial systems, solidifying their position as reliable memory solutions in the semiconductor market.