CY7C0837AV, CY7C0830AV CY7C0831AV, CY7C0832AV CY7C0832BV, CY7C0833AV

Maximum Ratings

Exceeding maximum ratings[23] may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

Power Applied

–55°C to +125°C

Supply Voltage to Ground Potential

–0.5V to +4.6V

DC Voltage Applied to

 

 

Outputs in High-Z State

–0.5V to VDD + 0.5V

DC Input Voltage

–0.5V to V

+ 0.5V[24]

 

DD

 

Output Current into Outputs (LOW)

20 mA

Static Discharge Voltage

> 2000V

(JEDEC JESD22-A114-2000B)

 

Latch Up Current

 

> 200 mA

Operating Range

 

 

 

 

Range

Ambient

VDD

Temperature

Commercial

0°C to +70°C

3.3V±165 mV

 

 

 

Industrial

–40°C to +85°C

3.3V±165 mV

 

 

 

Electrical Characteristics

Over the Operating Range

Parameter

Description

 

 

 

 

-167

 

 

-133

 

 

-100

 

Unit

 

 

 

 

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

VOH

Output HIGH Voltage (VDD = Min., IOH= –4.0 mA)

2.4

 

 

2.4

 

 

2.4

 

 

V

VOL

Output LOW Voltage (VDD = Min., IOL= +4.0 mA)

 

 

0.4

 

 

0.4

 

 

0.4

V

VIH

Input HIGH Voltage

 

 

 

 

2.0

 

 

2.0

 

 

2.0

 

 

V

VIL

Input LOW Voltage

 

 

 

 

 

 

0.8

 

 

0.8

 

 

0.8

V

IOZ

Output Leakage Current

 

 

 

 

–10

 

10

–10

 

10

–10

 

10

μA

IIX1

Input Leakage Current Except TDI, TMS,

MRST

 

–10

 

10

–10

 

10

–10

 

10

μA

IIX2

Input Leakage Current TDI, TMS,

MRST

 

–0.1

 

1.0

–0.1

 

1.0

–0.1

 

1.0

mA

ICC

Operating Current for

CY7C0837AV

 

225

300

 

225

300

 

 

 

mA

 

(VDD = Max., IOUT = 0 mA), Outputs

CY7C0830AV

 

 

 

 

 

 

 

 

 

 

 

Disabled

CY7C0831AV

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C0832AV

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C0832BV

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C0833AV

 

 

 

 

270

400

 

200

310

mA

ISB1[25]

Standby Current (Both Ports TTL Level)

 

90

115

 

90

115

 

90

115

mA

 

CEL and CER VIH, f = fMAX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB2[25]

Standby Current (One Port TTL Level)

 

160

210

 

160

210

 

160

210

mA

 

CEL CER VIH, f = fMAX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB3[25]

Standby Current (Both Ports CMOS Level)

 

55

75

 

55

75

 

55

75

mA

 

CEL and CER VDD – 0.2V, f = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB4[25]

Standby Current (One Port CMOS Level)

 

160

210

 

160

210

 

160

210

mA

 

CEL CER VIH, f = fMAX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB5

Operating Current (VDD = Max, IOUT

CY7C0833AV

 

 

 

 

70

100

 

70

100

mA

 

= 0 mA, f = 0) Outputs Disabled

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance

Part Number [26]

Parameter

Description

Test Conditions

Max

Unit

CY7C0837AV/CY7C0830AV/CY7C0831AV

CIN

Input Capacitance

TA = 25°C,

13

pF

CY7C0832AV/CY7C0832BV

 

 

f = 1 MHz,

 

 

 

 

VDD = 3.3V

 

 

 

COUT

Output Capacitance

10

pF

 

 

CY7C0833AV

CIN

Input Capacitance

 

22

pF

 

COUT

Output Capacitance

 

20

pF

Notes

23.The voltage on any input or I/O pin can not exceed the power pin during power up.

24.Pulse width < 20 ns.

25.ISB1, ISB2, ISB3 and ISB4 are not applicable for CY7C0833AV because it can not be powered down by using chip enable pins.

26.COUT also references CI/O.

Document #: 38-06059 Rev. *S

Page 12 of 28

[+] Feedback

Page 12
Image 12
Cypress CY7C0837AV, CY7C0832BV, CY7C0833AV manual Maximum Ratings, Operating Range, Electrical Characteristics, Capacitance

CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, CY7C0832AV specifications

Cypress Semiconductor, a leader in innovative semiconductor solutions, has developed a range of high-performance SRAM (Static Random Access Memory) products, including the CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV. These devices cater to various applications requiring fast, reliable memory storage.

One of the main features of these SRAMs is their speed. They offer fast access times, which range from 10 to 15 nanoseconds. This rapid access is critical for applications where speed is essential, such as high-speed networking and telecommunications equipment, automotive systems, and industrial controls. The CY7C0837AV, for instance, boasts a 1 Mbit memory capacity, making it suitable for applications requiring a larger data buffer.

Another notable feature of these devices is their low power consumption. The SRAMs are designed to operate at low voltages, typically around 3.3V, which greatly reduces the overall power requirements. This characteristic is particularly advantageous for battery-operated devices and portable electronics, as it extends battery life and improves energy efficiency.

Cypress's SRAM offerings incorporate advanced technologies like asynchronous read and write operations, which enable users to access memory without the need for a clock signal. This asynchronous nature allows for simpler system designs and integration, significantly reducing component count and complexity.

In terms of packaging, these SRAMs are available in various formats, including standard DIP and surface-mount options, facilitating easy integration into a range of printed circuit boards. Their footprint and compatibility with existing designs ensure they can be utilized in both new developments and legacy system enhancements.

The CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV also support burst mode operations, allowing for faster sequential data access. This feature enhances performance in applications that require continuous data streams, such as video processing and signal processing tasks.

In summary, the Cypress CY7C0837AV, CY7C0833AV, CY7C0831AV, CY7C0830AV, and CY7C0832AV SRAMs provide a combination of high speed, low power consumption, and versatile packaging options. Their advanced technologies and characteristics make them ideal for a wide range of applications, from automotive to industrial systems, solidifying their position as reliable memory solutions in the semiconductor market.