CY7C1370DV25
CY7C1372DV25
Document #: 38-05558 Rev. *D Page 9 of 27
Truth Table[1, 2, 3, 4, 5, 6, 7]
Operation Address
Used CE ZZ ADV/LD WE BWxOE CEN CLK DQ
Deselect Cycle None H L L X X X L L-H Tri-state
Continue Deselect Cycle None X L H X X X L L-H Tri-state
Read Cycle (Begin Burst) External L L L H X L L L-H Data Out (Q)
Read Cycle (Continue Burst) Next X L H X X L L L-H Data Out (Q)
NOP/Dummy Read (Begin Burst) External L L L H X H L L-H Tri-state
Dummy Read (Continue Burst) Next X L H X X H L L-H Tri-state
Write Cycle (Begin Burst) External L L L L L X L L-H Data In (D)
Write Cycle (Continue Burst) Next X L H X L X L L-H Data In (D)
NOP/Write Abort (Begin Burst) None L L L L H X L L-H Tri-state
Write Abort (Continue Burst) Next X L H X H X L L-H Tri-state
Ignore Clock Edge (Stall) Current X L X X X X H L-H
Sleep Mode None X H X X X X X X Tri-state
Partial Write Cycle Description[1, 2, 3, 8]
Function (CY7C1370DV25) WE BWdBWcBWbBWa
Read H X X X X
Write – No bytes written L H H H H
Write Byte a – (DQa and DQPa) LHHHL
Write Byte b – (DQb and DQPb)LHHLH
Write Bytes b, a L H H L L
Write Byte c – (DQc and DQPc)LHLHH
Write Bytes c, a L H L H L
Write Bytes c, b L H L L H
Write Bytes c, b, a L H L L L
Write Byte d – (DQd and DQPd)LLHHH
Write Bytes d, a L L H H L
Write Bytes d, b LLHLH
Write Bytes d, b, a L L H L L
Write Bytes d, c L L L H H
Write Bytes d, c, a L L L H L
Write Bytes d, c, b L L L L H
Write All Bytes L L L L L
Notes:
1. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for ALL Chip Enables active. BWx = L signifies at least one Byte Write Select is active, BWx = V alid
signifies that the desired byte write selects are asserted, see Write Cycle Description table for details.
2. Write is defined by WE and BWX. See Write Cycle Description table for details.
3. When a write cycle is detected, all I/Os are tri-stated, even during byte writes.
4. The DQ and DQP pins are controlled by the current cycle and the OE signal.
5. CEN = H inserts wait states.
6. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE.
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles.During a read cycle DQs and DQPX = Three-state when
OE is inactive or when the device is deselected, and DQs = data when OE is active.
8. Table only lists a partial listing of the byte write combinations. Any Combination of BWX is valid. Appropriate write will be done based on which byte write is active.
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