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MT90840 | Preliminary Information |
AC Electrical Characteristics† - Intel/National- HPC Multiplexed Bus Mode
Voltages are with respect to ground (VSS) unless otherwise stated.
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| Characteristics | Sym | Min | Typ‡ | Max | Units | Test Conditions/ | ||||||||||||||||
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| Notes | ||
1 |
| ALE pulse width | talw | 10 |
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2 |
| Address setup from ALE falling | tads | 5 |
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3 |
| Address hold from ALE falling | tadh | 5 |
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4 |
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| Active after ALE falling | talrd | 15 |
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RD |
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5 |
| Data setup from |
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| LOW on read | tddr | 0 |
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| ns | CL=150 pF on |
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DTA |
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| and 30 pF on | ||
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6 |
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| hold after |
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| tcsrw | 0 |
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CS | RD/WR |
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7 |
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| setup from |
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| tcsr | 0 |
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CS | RD |
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8 |
| Data hold after |
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| tdhr | 10 |
| 22 | ns | CL=30 pF | |||||||||||||
RD |
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| 15 |
| 30 | ns | CL=150 pF | ||
9 |
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| delay after ALE falling | talwr | 15 |
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WR |
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10 |
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| setup from |
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| tcsw | 0 |
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CS | WR |
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11 |
| Data setup from |
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| tdsw | 10 |
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WR |
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12 |
| Data hold after |
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| Inactive | tdhw | 0 |
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WR |
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13 |
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| trst | 23 |
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RD/WR Inactive to ALE Falling Edge |
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14 |
| Acknowledgment hold time | takh | 0 |
| 20 | ns | CL=150 pF, RL=1kΩ∗ | ||||||||||||||||||||||
15 |
| Data Delay on Reading Registers | trdd |
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| 47 | ns | CL=30 pF | ||||||||||||||||||||||
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| 68 | ns | CL=150 pF | ||
16 |
| Acknowledgment Delay |
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| 73 | ns | CL=30 pF | |||||||||||||||||||||||
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| Reading Registers |
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| 85 | ns | CL=150 pF | ||||||||||||||||||||||
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| Acknowledgment Delay |
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| 32 | ns | CL=30 pF | |||||||||||||||||||||||
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| Writing Registers |
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| 41 | ns | CL=150 pF | ||||||||||||||||||||||
17 |
| Acknowledgment Delay - Memories: |
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| Reading TP Data Memory |
| 244 | 488 | 1306 | ns | 1 to 5 C4 cycles + | ||||||||||||||||||||||
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| register | ||
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| Reading RP Data Memory |
| 122 | 366 | 1062 | ns | .5 to 4 C4 cycles + | ||||||||||||||||||||||
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| register | ||
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| Reading TP Connection Memory |
| 1 clock | 2 clock | 3 clk cyc + |
| 1 to 3 PCKT/R cycles | ||||||||||||||||||||||
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| cycle | cycles |
| + register | |||
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| Reading RP Connection Memory |
| 244 | 488 | 817 | ns | 1 to 3 C4 cycles + | ||||||||||||||||||||||
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| register | ||
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| Writing TP Connection Memory** |
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| 3 clk cyc + |
| Up to 3 PCKT/R cyc. | |||||||||||||||||||||||
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| + register | |||
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| Writing RP Connection Memory** |
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| 774 | ns | Up to 3 C4 cycles + | |||||||||||||||||||||||
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| register | ||
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† Timing is over recommended temperature & power supply voltages. |
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‡ Typical figures are at 25°C and are for design aid only: not guaranteed and not subject to production testing. |
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*High Impedance is measured by pulling to the appropriate rail with RL, with timing corrected to cancel time taken to discharge CL.
**Individual writes to Connection Memories will have Register Acknowledgment Delay. Burst writes to Connection Memories will have Read Connection Memory Acknowledgment Delay.