Cypress CY7C1143V18, CY7C1145V18, CY7C1141V18 Application Example, Sram #4, BUS Master, Operation

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CY7C1141V18, CY7C1156V18

CY7C1143V18, CY7C1145V18

Application Example

Figure 1 shows the four QDR-II+ used in an application.

Figure 1. Appliation Example

 

 

 

SRAM #1

 

ZQ

RQ = 250ohms

 

 

ZQ

RQ = 250ohms

 

Vt

 

CQ/CQ

 

 

SRAM #4

CQ/CQ

 

 

 

D

 

 

Q

 

D

 

Q

 

 

R

A

RPS WPS BWS

K

K

 

A

RPS WPS BWS

K K

 

DATA IN

 

 

 

 

 

 

R

 

 

DATA OUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vt

 

 

Address

 

 

 

 

 

 

Vt

 

 

BUS MASTER

RPS

 

 

 

 

 

 

R

 

 

 

 

 

 

 

 

 

 

 

(CPU or ASIC)

WPS

 

 

 

 

 

 

 

 

 

 

BWS

 

 

 

 

 

 

 

 

 

CLKIN/CLKIN

 

 

 

 

 

 

 

 

 

Source K

 

 

 

 

 

 

 

 

 

Source K

 

 

 

 

 

 

R = 50ohms, Vt = VDDQ/2

 

 

 

 

 

 

 

 

Truth Table

The truth table for the CY7C1141V18, CY7C1156V18, CY7C1143V18, and CY7C1145V18 follows.[2, 3, 4, 5, 6, 7]

Operation

K

 

RPS

 

WPS

DQ

DQ

DQ

DQ

Write Cycle:

L-H

 

H[8]

 

L[9]

D(A) at K(t + 1)

D(A + 1) at

 

 

 

D(A + 2) at K(t + 2)

 

 

 

 

K(t + 1)

D(A + 3) at K(t + 2)

Load address on the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edge of K; input write data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

on two consecutive K and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K rising edges

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

 

L[9]

 

X

Q(A) at K(t + 2)

Q(A + 1) at

 

 

Q(A + 2) at K(t + 3)

 

 

 

 

K(t + 2)

Q(A + 3) at K(t + 3)

(2.0 cycle Latency)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Load address on the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

edge of K; wait one and a

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

half cycle; read data on

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

two consecutive K and

K

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rising edges

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

 

H

 

H

D = X

D = X

D = X

D = X

 

 

 

 

 

 

 

 

 

Q = High-Z

Q = High-Z

Q = High-Z

Q = High-Z

 

 

 

 

 

 

 

 

 

 

Standby: Clock Stopped

Stopped

 

X

 

X

Previous State

Previous State

Previous State

Previous State

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

2.X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

3.Device powers up deselected and the outputs in a tri-state condition.

4.“A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A + 3 represents the address sequence in the burst.

5.“t” represents the cycle at which a Read/Write operation is started. t + 1, t + 2, and t + 3 are the first, second, and third clock cycles respectively succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges.

7.IDo K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

8.If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.

9.This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the second read orwrite request.

Document Number: 001-06583 Rev. *D

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Contents Functional Description FeaturesConfigurations Selection GuideLogic Block Diagram CY7C1141V18 Logic Block Diagram CY7C1156V18Logic Block Diagram CY7C1143V18 Logic Block Diagram CY7C1145V18CY7C1156V18 2M x Pin ConfigurationsCY7C1141V18 2M x NC/144MWPS BWS CY7C1143V18 1M xCY7C1145V18 512K x WPS BWS RPSBWS2, BWS3 Pin DefinitionsPin Name Pin Description QvldTDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TCK Pin for JtagWrite Operations Functional OverviewRead Operations Byte Write OperationsProgrammable Impedance Valid Data Indicator QvldDepth Expansion Echo ClocksBUS Master Application ExampleSram #4 OperationRemains unaltered Write Cycle DescriptionsComments During the data portion of a write sequenceInto the device. D359 remains unaltered Write cycle descriptions of CY7C1145V18 follows.2Device Device. D80 and D3518 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram Tap Controller State Diagram11TAP Controller TAP Controller Block DiagramTAP Electrical Characteristics Parameter Description Test Conditions Min Max UnitTAP AC Switching Characteristics TAP Timing and Test ConditionScan Register Sizes Identification Register DefinitionsInstruction Codes Boundary Scan Order Bit # Bump IDPower Up Waveforms Power Up Sequence in QDR-II+ SramPower Up Sequence DLL ConstraintsMaximum Ratings Electrical CharacteristicsAC Electrical Characteristics Operating RangeAC Test Loads and Waveforms CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitParameter Min Max Switching CharacteristicsCypress Consortium Description 375 MHz 333 MHz 300 MHz Unit DLL TimingSwitching Waveforms Read/Write/Deselect Sequence Waveform for 2.0 Cycle Read Latency 30, 31Speed Ordering Code Package Package Type Operating DiagramOrdering Information CY7C1156V18-375BZXI CY7C1143V18-375BZXI CY7C1145V18-375BZXI300 Package Diagram Ball Fbga 13 x 15 x 1.4 mmVKN/KKVTMP ECN No Issue Date Orig. Description of ChangeDocument History VKN/AESA