Cypress CY7C1381F Maximum Ratings, Operating Range, Electrical Characteristics, Ambient Range

CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. For user guidelines, not tested.

Storage Temperature		–65°C to +150°C
Ambient Temperature with
Power Applied		–55°C to +125°C
Supply Voltage on VDD Relative to GND		–0.3V to +4.6V
Supply Voltage on VDDQ Relative to GND		–0.3V to +VDD
DC Voltage Applied to Outputs	–0.5V to VDDQ + 0.5V
in Tri-State

DC Input Voltage		–0.5V to VDD + 0.5V
Current into Outputs (LOW)			20 mA
Static Discharge Voltage			> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current			> 200 mA
Operating Range
	Ambient
Range	Temperature	VDD	VDDQ
Commercial	0°C to +70°C	3.3V –5%/+10%	2.5V – 5%
			to VDD
Industrial	–40°C to +85°C

Electrical Characteristics

Over the Operating Range [17, 18]

Parameter		Description	Test Conditions		Min	Max	Unit
VDD		Power Supply Voltage			3.135	3.6	V
VDDQ		IO Supply Voltage	for 3.3V IO		3.135	VDD	V
			for 2.5V IO		2.375	2.625	V
VOH		Output HIGH Voltage	for 3.3V IO, IOH = –4.0 mA		2.4		V
			for 2.5V IO, IOH = –1.0 mA		2.0		V
VOL		Output LOW Voltage	for 3.3V IO, IOL = 8.0 mA			0.4	V
			for 2.5V IO, IOL = 1.0 mA			0.4	V
V	IH	Input HIGH Voltage [17]	for 3.3V IO		2.0	V + 0.3V	V
						DD
			for 2.5V IO		1.7	VDD + 0.3V	V
VIL		Input LOW Voltage [17]	for 3.3V IO		–0.3	0.8	V
			for 2.5V IO		–0.3	0.7	V
IX		Input Leakage Current	GND ≤ VI ≤ VDDQ		–5	5	∝A
		except ZZ and MODE
		Input Current of MODE	Input = VSS		–30		∝A
			Input = VDD			5	∝A
		Input Current of ZZ	Input = VSS		–5		∝A
			Input = VDD			30	∝A
IOZ		Output Leakage Current	GND ≤ VI ≤ VDD, Output Disabled		–5	5	∝A
IDD		VDD Operating Supply	VDD = Max, IOUT = 0 mA,	7.5-ns cycle, 133 MHz		210	mA
		Current	f = fMAX = 1/tCYC
				10-ns cycle, 100 MHz		175	mA
ISB1		Automatic CE	Max VDD, Device Deselected,	7.5-ns cycle, 133 MHz		140	mA
		Power Down	VIN ≥ VIH or VIN ≤ VIL, f = fMAX,
				10-ns cycle, 100 MHz		120
		Current—TTL Inputs	inputs switching
ISB2		Automatic CE	Max VDD, Device Deselected,	All speeds		70	mA
		Power Down	VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
		Current—CMOS Inputs	f = 0, inputs static
ISB3		Automatic CE	Max VDD, Device Deselected,	7.5-ns cycle, 133 MHz		130	mA
		Power Down	VIN ≥ VDDQ – 0.3V or VIN ≤ 0.3V,
				10-ns cycle, 100 MHz		110	mA
		Current—CMOS Inputs	f = fMAX, inputs switching
ISB4		Automatic CE	Max VDD, Device Deselected,	All Speeds		80	mA
		Power Down	VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
		Current—TTL Inputs	f = 0, inputs static

Notes:

17.Overshoot: VIH(AC) < VDD +1.5V (pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (pulse width less than tCYC/2).

18.Tpower up: Assumes a linear ramp from 0v to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05544 Rev. *F Page 18 of 29

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