Cypress CY7C1383D, CY7C1383F, CY7C1381D, CY7C1381F manual Read/Write Cycle Timing 26, 28, Adv

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CY7C1381D, CY7C1381F

CY7C1383D, CY7C1383F

Timing Diagrams (continued)

Read/Write Cycle Timing [26, 28, 29]

tCYC

CLK

tCH tCL

tADS tADH

ADSP

ADSC

tAS tAH

ADDRESS

A1

A2

A3

A4

tWES t WEH

BWE, BW X

tCES tCEH

A5A6

CE

 

 

ADV

 

 

OE

 

 

Data In (D)

High-Z

t

 

 

OEHZ

Data Out (Q)

Q(A1)

Q(A2)

 

Back-to-Back READs

tDS

tDH

 

tOELZ

D(A3)

 

 

 

tCDV

 

 

 

Q(A4)

Q(A4+1)

Q(A4+2)

Q(A4+3)

Single WRITE

BURST READ

 

 

DON’T CARE

UNDEFINED

 

 

D(A5) D(A6)

Back-to-Back

WRITEs

Notes:

28.The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC.

29.GW is HIGH.

Document #: 38-05544 Rev. *F

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Contents Cypress Semiconductor Corporation FeaturesSelection Guide 133 MHz 100 MHz UnitCY7C1381D, CY7C1381F CY7C1383D 1M x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1381D 512K x Pin Configurations Pin Configurations Ball Fbga Pinout3 Chip Enable Byte write select inputs, active LOW. Qualified with Pin DefinitionsName Description Functional Overview = GND Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics AddressCE1 CE2 CE3 Adsp Adsc ADV Write CLK Cycle Description UsedDQPC, Dqpa Truth Table for Read/Write 4Function CY7C1381D/CY7C1381F DQPB, DqpaIeee 1149.1 Serial Boundary Scan Jtag TAP Controller State DiagramTAP Controller Block Diagram TAP Instruction Set Bypass RegisterTAP Timing TAP AC Switching CharacteristicsParameter Description Conditions Min TAP DC Electrical Characteristics And Operating Conditions3V TAP AC Test Conditions 5V TAP AC Test ConditionsBit Size ×36 Bit Size ×18 Identification Register DefinitionsScan Register Sizes Identification CodesBit # Ball ID Ball BGA Boundary Scan Order 14A11 Ambient Range Electrical CharacteristicsMaximum Ratings Operating RangeAC Test Loads and Waveforms CapacitanceThermal Resistance 133 MHz 100 MHz Parameter Description Unit Min Switching CharacteristicsRead Cycle Timing Timing DiagramsAddress BWE Write Cycle Timing 26ADV Read/Write Cycle Timing 26, 28ZZ Mode Timing 30 Ordering Information Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document History Issue Date Orig. Description of Change

CY7C1381D, CY7C1381F, CY7C1383D, CY7C1383F specifications

The Cypress CY7C1383F, CY7C1383D, CY7C1381F, and CY7C1381D are high-performance static random-access memory (SRAM) devices designed for a variety of applications requiring fast data storage and retrieval. These memory chips are part of the Cypress SRAM family, known for their low power consumption, high speed, and data integrity, making them suitable for use in telecommunications, networking, and industrial applications.

One of the standout features of the CY7C1383F and CY7C1383D models is their high density, offering 256K bits of memory. This provides ample space for storing critical data while maintaining excellent performance. The CY7C1381F and CY7C1381D variants, having a smaller capacity of 128K bits, are ideal for applications where space and power savings are paramount. All four devices are organized as 32K x 8 bits, promoting ease of integration into various designs.

These SRAM devices utilize advanced CMOS technology, which not only enhances their speed but also reduces power consumption. The fast access times, reaching as low as 10 nanoseconds for the CY7C1383F and CY7C1381F, enable high-speed data processing, making these memories suitable for cache applications and high-speed buffering. Overall, their performance characteristics ensure data can be accessed quickly and efficiently.

The CY7C1383F and CY7C1383D models come with an extended temperature range, ensuring consistent performance even in harsh environments. This reliability is critical for industrial applications where fluctuating temperatures can affect device functionality. Moreover, the CY7C1381F and CY7C1381D share this advantage, making all four components suitable for different operating conditions.

Built-in features such as byte-wide write enable and chip enable signals significantly ease the control of data access and manipulation. Additionally, the asynchronous nature of these SRAM devices allows for simple interfacing with various microcontrollers and processors, facilitating integration into existing systems with minimal design modifications.

In summary, the Cypress CY7C1383F, CY7C1383D, CY7C1381F, and CY7C1381D SRAM devices deliver high-performance data storage solutions, characterized by low power consumption, fast access times, and reliability in diverse operating conditions. Their versatility makes them an excellent choice for engineers seeking robust memory solutions in their designs.
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