Cypress CY7C1383F, CY7C1383D manual CY7C1381D, CY7C1381F

Page 2

 

 

 

 

CY7C1381D, CY7C1381F

 

 

 

 

CY7C1383D, CY7C1383F

Logic Block Diagram – CY7C1381D/CY7C1381F [3] (512K x 36)

 

 

 

 

A0, A1, A

 

ADDRESS

 

 

 

 

 

 

REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

A[1:0]

 

 

 

 

 

 

 

 

 

 

 

ADV

 

BURST

Q1

 

 

 

 

CLK

 

 

 

 

 

 

 

COUNTER

 

 

 

 

 

 

 

AND LOGIC

Q0

 

 

 

 

 

CLR

 

 

 

 

 

 

 

 

 

 

ADSC

 

 

 

 

 

 

 

ADSP

 

 

 

 

 

 

 

 

DQ D, DQP D

 

DQ D, DQP D

 

 

 

 

BW D

 

BYTE

 

 

 

 

BYTE

 

 

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

DQ C , DQP C

 

DQ C , DQP C

 

 

 

 

BW C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WRITE REGISTER

 

WRITE REGISTER

MEMORY

 

OUTPUT

DQs

 

 

 

SENSE

 

 

 

 

ARRAY

BUFFERS

DQP A

 

 

 

DQ B , DQP B

AMPS

 

DQ B , DQP B

 

 

 

DQP B

BW B

 

 

 

 

 

 

 

WRITE REGISTER

 

 

 

DQP C

 

 

 

 

 

 

 

 

 

 

 

 

DQP D

 

WRITE REGISTER

 

 

 

 

 

 

 

 

DQ A, DQP

 

 

 

 

BW A

DQ A, DQP A

 

BYTE

 

 

 

 

BYTE

 

WRITE REGISTER

 

 

 

 

BWE

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

GW

 

 

 

 

 

 

INPUT

CE1

ENABLE

 

 

 

 

REGISTERS

 

 

 

 

 

REGISTER

 

 

 

 

 

CE2

 

 

 

 

 

 

 

 

 

 

 

 

CE3

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

SLEEP

 

 

 

 

 

 

Logic Block Diagram – CY7C1383D/CY7C1383F[3] (1M x 18)

 

 

 

 

A0,A1,A

ADDRESS

 

 

 

 

 

REGISTER

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

A[1:0]

 

 

 

 

 

 

 

 

 

ADV

 

BURST

Q1

 

 

 

 

 

COUNTER AND

 

 

 

 

 

 

Q0

 

 

 

 

DQ B ,DQP

B

DQ B ,DQP B

 

 

 

 

WRITE DRIVER

 

 

 

BW B

 

 

 

 

 

MEMORY

SENSE

OUTPUT

DQs

 

 

 

ARRAY

AMPS

BUFFERS

DQP A

 

 

 

 

 

DQ A,DQP A

DQ A,DQP A

 

 

DQP B

 

WRITE DRIVER

 

 

 

BW A

 

 

 

 

 

 

 

 

 

BWE

 

 

 

 

 

INPUT

GW

 

 

 

 

 

ENABLE

 

 

 

 

REGISTERS

CE

 

 

 

 

1

 

 

 

 

 

CE 2

 

 

 

 

 

CE 3

 

 

 

 

 

OE

 

 

 

 

 

 

SLEEP

 

 

 

 

 

 

CONTROL

 

 

 

 

 

Note:

 

 

 

 

 

 

3. CY7C1381F and CY7C1383F have only 1 chip enable (CE1).

 

 

 

Document #: 38-05544 Rev. *F

Page 2 of 29

[+] Feedback

Page 1 Page 3
Image 2
Page 1 Page 3
Contents 133 MHz 100 MHz Unit FeaturesSelection Guide Cypress Semiconductor CorporationCY7C1381D, CY7C1381F CY7C1383D 1M x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1381D 512K x Pin Configurations Pin Configurations Ball Fbga Pinout3 Chip Enable Byte write select inputs, active LOW. Qualified with Pin DefinitionsName Description Functional Overview Address Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics = GNDCycle Description Used CE1 CE2 CE3 Adsp Adsc ADV Write CLKDQPB, Dqpa Truth Table for Read/Write 4Function CY7C1381D/CY7C1381F DQPC, DqpaIeee 1149.1 Serial Boundary Scan Jtag TAP Controller State DiagramTAP Controller Block Diagram Bypass Register TAP Instruction SetTAP AC Switching Characteristics TAP Timing5V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions3V TAP AC Test Conditions Parameter Description Conditions MinIdentification Codes Identification Register DefinitionsScan Register Sizes Bit Size ×36 Bit Size ×18Ball BGA Boundary Scan Order 14 Bit # Ball IDA11 Operating Range Electrical CharacteristicsMaximum Ratings Ambient RangeAC Test Loads and Waveforms CapacitanceThermal Resistance Switching Characteristics 133 MHz 100 MHz Parameter Description Unit MinTiming Diagrams Read Cycle TimingWrite Cycle Timing 26 Address BWERead/Write Cycle Timing 26, 28 ADVZZ Mode Timing 30 Ordering Information Package Diagrams Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mmBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Issue Date Orig. Description of Change Document History

CY7C1381D, CY7C1381F, CY7C1383D, CY7C1383F specifications

The Cypress CY7C1383F, CY7C1383D, CY7C1381F, and CY7C1381D are high-performance static random-access memory (SRAM) devices designed for a variety of applications requiring fast data storage and retrieval. These memory chips are part of the Cypress SRAM family, known for their low power consumption, high speed, and data integrity, making them suitable for use in telecommunications, networking, and industrial applications.

One of the standout features of the CY7C1383F and CY7C1383D models is their high density, offering 256K bits of memory. This provides ample space for storing critical data while maintaining excellent performance. The CY7C1381F and CY7C1381D variants, having a smaller capacity of 128K bits, are ideal for applications where space and power savings are paramount. All four devices are organized as 32K x 8 bits, promoting ease of integration into various designs.

These SRAM devices utilize advanced CMOS technology, which not only enhances their speed but also reduces power consumption. The fast access times, reaching as low as 10 nanoseconds for the CY7C1383F and CY7C1381F, enable high-speed data processing, making these memories suitable for cache applications and high-speed buffering. Overall, their performance characteristics ensure data can be accessed quickly and efficiently.

The CY7C1383F and CY7C1383D models come with an extended temperature range, ensuring consistent performance even in harsh environments. This reliability is critical for industrial applications where fluctuating temperatures can affect device functionality. Moreover, the CY7C1381F and CY7C1381D share this advantage, making all four components suitable for different operating conditions.

Built-in features such as byte-wide write enable and chip enable signals significantly ease the control of data access and manipulation. Additionally, the asynchronous nature of these SRAM devices allows for simple interfacing with various microcontrollers and processors, facilitating integration into existing systems with minimal design modifications.

In summary, the Cypress CY7C1383F, CY7C1383D, CY7C1381F, and CY7C1381D SRAM devices deliver high-performance data storage solutions, characterized by low power consumption, fast access times, and reliability in diverse operating conditions. Their versatility makes them an excellent choice for engineers seeking robust memory solutions in their designs.
Top Page Image Contents