Cypress CY7C1381D, CY7C1383F, CY7C1381F, CY7C1383D manual A11

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CY7C1381D, CY7C1381F

CY7C1383D, CY7C1383F

165-Ball BGA Boundary Scan Order [14, 16]

Bit #	Ball ID	Bit #	Ball ID	Bit #	Ball ID
1	N6	31	D10	61	G1

2	N7	32	C11	62	D2

3	N10	33	A11	63	E2

4	P11	34	B11	64	F2

5	P8	35	A10	65	G2

6	R8	36	B10	66	H1

7	R9	37	A9	67	H3

8	P9	38	B9	68	J1

9	P10	39	C10	69	K1

10	R10	40	A8	70	L1

11	R11	41	B8	71	M1

12	H11	42	A7	72	J2

13	N11	43	B7	73	K2

14	M11	44	B6	74	L2

15	L11	45	A6	75	M2

16	K11	46	B5	76	N1

17	J11	47	A5	77	N2

18	M10	48	A4	78	P1

19	L10	49	B4	79	R1

20	K10	50	B3	80	R2

21	J10	51	A3	81	P3

22	H9	52	A2	82	R3

23	H10	53	B2	83	P2

24	G11	54	C2	84	R4

25	F11	55	B1	85	P4

26	E11	56	A1	86	N5

27	D11	57	C1	87	P6

28	G10	58	D1	88	R6

29	F10	59	E1	89	Internal

30	E10	60	F1

Note:

16. Bit# 89 is pre-set HIGH.

Document #: 38-05544 Rev. *F

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Contents Selection Guide Features133 MHz 100 MHz Unit Cypress Semiconductor CorporationCY7C1381D, CY7C1381F CY7C1383D 1M x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1381D 512K x Pin Configurations Pin Configurations Ball Fbga Pinout3 Chip Enable Byte write select inputs, active LOW. Qualified with Pin DefinitionsName Description Functional Overview ZZ Mode Electrical Characteristics Interleaved Burst Address Table Mode = Floating or VDDAddress = GNDCE1 CE2 CE3 Adsp Adsc ADV Write CLK Cycle Description UsedFunction CY7C1381D/CY7C1381F Truth Table for Read/Write 4DQPB, Dqpa DQPC, DqpaIeee 1149.1 Serial Boundary Scan Jtag TAP Controller State DiagramTAP Controller Block Diagram TAP Instruction Set Bypass RegisterTAP Timing TAP AC Switching Characteristics3V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions Parameter Description Conditions MinScan Register Sizes Identification Register DefinitionsIdentification Codes Bit Size ×36 Bit Size ×18Bit # Ball ID Ball BGA Boundary Scan Order 14A11 Maximum Ratings Electrical CharacteristicsOperating Range Ambient RangeAC Test Loads and Waveforms CapacitanceThermal Resistance 133 MHz 100 MHz Parameter Description Unit Min Switching CharacteristicsRead Cycle Timing Timing DiagramsAddress BWE Write Cycle Timing 26ADV Read/Write Cycle Timing 26, 28ZZ Mode Timing 30 Ordering Information Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document History Issue Date Orig. Description of Change

CY7C1381D, CY7C1381F, CY7C1383D, CY7C1383F specifications

The Cypress CY7C1383F, CY7C1383D, CY7C1381F, and CY7C1381D are high-performance static random-access memory (SRAM) devices designed for a variety of applications requiring fast data storage and retrieval. These memory chips are part of the Cypress SRAM family, known for their low power consumption, high speed, and data integrity, making them suitable for use in telecommunications, networking, and industrial applications.

One of the standout features of the CY7C1383F and CY7C1383D models is their high density, offering 256K bits of memory. This provides ample space for storing critical data while maintaining excellent performance. The CY7C1381F and CY7C1381D variants, having a smaller capacity of 128K bits, are ideal for applications where space and power savings are paramount. All four devices are organized as 32K x 8 bits, promoting ease of integration into various designs.

These SRAM devices utilize advanced CMOS technology, which not only enhances their speed but also reduces power consumption. The fast access times, reaching as low as 10 nanoseconds for the CY7C1383F and CY7C1381F, enable high-speed data processing, making these memories suitable for cache applications and high-speed buffering. Overall, their performance characteristics ensure data can be accessed quickly and efficiently.

The CY7C1383F and CY7C1383D models come with an extended temperature range, ensuring consistent performance even in harsh environments. This reliability is critical for industrial applications where fluctuating temperatures can affect device functionality. Moreover, the CY7C1381F and CY7C1381D share this advantage, making all four components suitable for different operating conditions.

Built-in features such as byte-wide write enable and chip enable signals significantly ease the control of data access and manipulation. Additionally, the asynchronous nature of these SRAM devices allows for simple interfacing with various microcontrollers and processors, facilitating integration into existing systems with minimal design modifications.

In summary, the Cypress CY7C1383F, CY7C1383D, CY7C1381F, and CY7C1381D SRAM devices deliver high-performance data storage solutions, characterized by low power consumption, fast access times, and reliability in diverse operating conditions. Their versatility makes them an excellent choice for engineers seeking robust memory solutions in their designs.