Cypress CY7C1381F, CY7C1383F, CY7C1381D, CY7C1383D manual Write Cycle Timing 26, Address BWE

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CY7C1381D, CY7C1381F

CY7C1383D, CY7C1383F

Timing Diagrams (continued)

Write Cycle Timing [26, 27]

 

tCYC

CLK

t CL

t CH

tADS tADH

ADSP

tADS

tADH

ADSC extends burst

 

tADS

tADH

 

 

ADSC

tAS tAH

ADDRESS

BWE,

BW X

A1

A2

Byte write signals are ignored for first cycle when

ADSP initiates burst

t t

WES WEH

A3

tWES tWEH

GW

tCES tCEH

CE

ADV

OE

Data in (D)

High-Z

Data Out (Q)

tOEHZ

t DS t DH

D(A1)

tADVS tADVH

ADV suspends burst

D(A2)

D(A2 + 1)

D(A2 + 1)

D(A2 + 2)

D(A2 + 3)

D(A3)

D(A3 + 1)

D(A3 + 2)

BURST READ

Single WRITE

BURST WRITE

 

DON’T CARE

UNDEFINED

Extended BURST WRITE

Note:

27. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BWX LOW.

Document #: 38-05544 Rev. *F

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Contents 133 MHz 100 MHz Unit FeaturesSelection Guide Cypress Semiconductor CorporationCY7C1381D, CY7C1381F CY7C1381D 512K x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1383D 1M x Pin Configurations Pin Configurations Ball Fbga Pinout3 Chip Enable Name Description Pin DefinitionsByte write select inputs, active LOW. Qualified with Functional Overview Address Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics = GNDCycle Description Used CE1 CE2 CE3 Adsp Adsc ADV Write CLKDQPB, Dqpa Truth Table for Read/Write 4Function CY7C1381D/CY7C1381F DQPC, DqpaTAP Controller Block Diagram TAP Controller State DiagramIeee 1149.1 Serial Boundary Scan Jtag Bypass Register TAP Instruction SetTAP AC Switching Characteristics TAP Timing5V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions3V TAP AC Test Conditions Parameter Description Conditions MinIdentification Codes Identification Register DefinitionsScan Register Sizes Bit Size ×36 Bit Size ×18Ball BGA Boundary Scan Order 14 Bit # Ball IDA11 Operating Range Electrical CharacteristicsMaximum Ratings Ambient RangeThermal Resistance CapacitanceAC Test Loads and Waveforms Switching Characteristics 133 MHz 100 MHz Parameter Description Unit MinTiming Diagrams Read Cycle TimingWrite Cycle Timing 26 Address BWERead/Write Cycle Timing 26, 28 ADVZZ Mode Timing 30 Ordering Information Package Diagrams Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mmBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Issue Date Orig. Description of Change Document History

CY7C1381D, CY7C1381F, CY7C1383D, CY7C1383F specifications

The Cypress CY7C1383F, CY7C1383D, CY7C1381F, and CY7C1381D are high-performance static random-access memory (SRAM) devices designed for a variety of applications requiring fast data storage and retrieval. These memory chips are part of the Cypress SRAM family, known for their low power consumption, high speed, and data integrity, making them suitable for use in telecommunications, networking, and industrial applications.

One of the standout features of the CY7C1383F and CY7C1383D models is their high density, offering 256K bits of memory. This provides ample space for storing critical data while maintaining excellent performance. The CY7C1381F and CY7C1381D variants, having a smaller capacity of 128K bits, are ideal for applications where space and power savings are paramount. All four devices are organized as 32K x 8 bits, promoting ease of integration into various designs.

These SRAM devices utilize advanced CMOS technology, which not only enhances their speed but also reduces power consumption. The fast access times, reaching as low as 10 nanoseconds for the CY7C1383F and CY7C1381F, enable high-speed data processing, making these memories suitable for cache applications and high-speed buffering. Overall, their performance characteristics ensure data can be accessed quickly and efficiently.

The CY7C1383F and CY7C1383D models come with an extended temperature range, ensuring consistent performance even in harsh environments. This reliability is critical for industrial applications where fluctuating temperatures can affect device functionality. Moreover, the CY7C1381F and CY7C1381D share this advantage, making all four components suitable for different operating conditions.

Built-in features such as byte-wide write enable and chip enable signals significantly ease the control of data access and manipulation. Additionally, the asynchronous nature of these SRAM devices allows for simple interfacing with various microcontrollers and processors, facilitating integration into existing systems with minimal design modifications.

In summary, the Cypress CY7C1383F, CY7C1383D, CY7C1381F, and CY7C1381D SRAM devices deliver high-performance data storage solutions, characterized by low power consumption, fast access times, and reliability in diverse operating conditions. Their versatility makes them an excellent choice for engineers seeking robust memory solutions in their designs.
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