Cypress CY7C1383D, CY7C1383F manual Capacitance, Thermal Resistance, AC Test Loads and Waveforms

Page 19

CY7C1381D, CY7C1381F

CY7C1383D, CY7C1383F

Capacitance [19]

	Parameter	Description	Test Conditions	100 TQFP	119 BGA	165 FBGA	Unit
	Parameter	Description	Test Conditions	Package	Package	Package	Unit

	CIN	Input Capacitance	TA = 25°C, f = 1 MHz,	5	8	9	pF
			VDD = 3.3V.
	CCLK	Clock Input Capacitance	VDD = 3.3V.	5	8	9	pF
			VDDQ = 2.5V
	CIO	Input/Output Capacitance	VDDQ = 2.5V	5	8	9	pF
	CIO	Input/Output Capacitance		5	8	9	pF

Thermal Resistance [19]

	Parameter	Description	Test Conditions	100 TQFP	119 BGA	165 FBGA	Unit
	Parameter	Description	Test Conditions	Package	Package	Package	Unit

	ΘJA	Thermal Resistance	Test conditions follow standard	28.66	23.8	20.7	°C/W
		(Junction to Ambient)	test methods and procedures
			for measuring thermal
	ΘJC	Thermal Resistance	for measuring thermal	4.08	6.2	4.0	°C/W
	ΘJC	Thermal Resistance	impedance, in accordance with	4.08	6.2	4.0	°C/W
		(Junction to Case)	EIA/JESD51.
			EIA/JESD51.

AC Test Loads and Waveforms

3.3V IO Test Load

3.3V

R = 317Ω

OUTPUT

ALL INPUT PULSES

VDDQ

Z0

= 50Ω

OUTPUT

RL

= 50Ω

10%

90%

5 pF

R = 351Ω

GND

INCLUDING

≤ 1 ns

VT = 1.5V

JIG AND

(a)

SCOPE

(b)

(c)

2.5V IO Test Load

R = 1667Ω

OUTPUT

2.5V

ALL INPUT PULSES

VDDQ

Z0

= 50Ω

OUTPUT

RL

= 50Ω

10%

90%

5 pF

R = 1538Ω

GND

INCLUDING

≤ 1 ns

VT = 1.25V

JIG AND

(a)

(b)

(c)

SCOPE

90%

10%

≤ 1 ns

90%

10%

≤ 1 ns

Note:

19. Tested initially and after any design or process change that may affect these parameters.

Document #: 38-05544 Rev. *F

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Contents Cypress Semiconductor Corporation FeaturesSelection Guide 133 MHz 100 MHz UnitCY7C1381D, CY7C1381F CY7C1381D 512K x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1383D 1M x Pin Configurations Pin Configurations Ball Fbga Pinout3 Chip Enable Name Description Pin DefinitionsByte write select inputs, active LOW. Qualified with Functional Overview = GND Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics AddressCE1 CE2 CE3 Adsp Adsc ADV Write CLK Cycle Description UsedDQPC, Dqpa Truth Table for Read/Write 4Function CY7C1381D/CY7C1381F DQPB, DqpaTAP Controller Block Diagram TAP Controller State DiagramIeee 1149.1 Serial Boundary Scan Jtag TAP Instruction Set Bypass RegisterTAP Timing TAP AC Switching CharacteristicsParameter Description Conditions Min TAP DC Electrical Characteristics And Operating Conditions3V TAP AC Test Conditions 5V TAP AC Test ConditionsBit Size ×36 Bit Size ×18 Identification Register DefinitionsScan Register Sizes Identification CodesBit # Ball ID Ball BGA Boundary Scan Order 14A11 Ambient Range Electrical CharacteristicsMaximum Ratings Operating RangeThermal Resistance CapacitanceAC Test Loads and Waveforms 133 MHz 100 MHz Parameter Description Unit Min Switching CharacteristicsRead Cycle Timing Timing DiagramsAddress BWE Write Cycle Timing 26ADV Read/Write Cycle Timing 26, 28ZZ Mode Timing 30 Ordering Information Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document History Issue Date Orig. Description of Change

CY7C1381D, CY7C1381F, CY7C1383D, CY7C1383F specifications

The Cypress CY7C1383F, CY7C1383D, CY7C1381F, and CY7C1381D are high-performance static random-access memory (SRAM) devices designed for a variety of applications requiring fast data storage and retrieval. These memory chips are part of the Cypress SRAM family, known for their low power consumption, high speed, and data integrity, making them suitable for use in telecommunications, networking, and industrial applications.

One of the standout features of the CY7C1383F and CY7C1383D models is their high density, offering 256K bits of memory. This provides ample space for storing critical data while maintaining excellent performance. The CY7C1381F and CY7C1381D variants, having a smaller capacity of 128K bits, are ideal for applications where space and power savings are paramount. All four devices are organized as 32K x 8 bits, promoting ease of integration into various designs.

These SRAM devices utilize advanced CMOS technology, which not only enhances their speed but also reduces power consumption. The fast access times, reaching as low as 10 nanoseconds for the CY7C1383F and CY7C1381F, enable high-speed data processing, making these memories suitable for cache applications and high-speed buffering. Overall, their performance characteristics ensure data can be accessed quickly and efficiently.

The CY7C1383F and CY7C1383D models come with an extended temperature range, ensuring consistent performance even in harsh environments. This reliability is critical for industrial applications where fluctuating temperatures can affect device functionality. Moreover, the CY7C1381F and CY7C1381D share this advantage, making all four components suitable for different operating conditions.

Built-in features such as byte-wide write enable and chip enable signals significantly ease the control of data access and manipulation. Additionally, the asynchronous nature of these SRAM devices allows for simple interfacing with various microcontrollers and processors, facilitating integration into existing systems with minimal design modifications.

In summary, the Cypress CY7C1383F, CY7C1383D, CY7C1381F, and CY7C1381D SRAM devices deliver high-performance data storage solutions, characterized by low power consumption, fast access times, and reliability in diverse operating conditions. Their versatility makes them an excellent choice for engineers seeking robust memory solutions in their designs.