Cypress CY7C1471V25, CY7C1473V25, CY7C1475V25 manual Pin Definitions

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CY7C1471V25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1473V25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1475V25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Name

IO

 

 

Description

 

 

 

 

 

 

 

A0, A1, A

Input-

Address Inputs used to select one of the address locations. Sampled at the rising edge

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

of the CLK. A[1:0] are fed to the two-bit burst counter.

 

 

 

 

 

A,

 

 

B,

Input-

Byte Write Inputs, Active LOW. Qualified with

 

to conduct writes to the SRAM.

 

 

BW

BW

WE

 

 

BWC, BWD,

Synchronous

Sampled on the rising edge of CLK.

 

 

BWE, BWF,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BWG, BWH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Write Enable Input, Active LOW. Sampled on the rising edge of CLK if

 

is active LOW.

 

 

WE

CEN

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

This signal must be asserted LOW to initiate a write sequence.

 

 

 

 

 

 

 

 

 

 

 

Input-

Advance/Load Input. Used to advance the on-chip address counter or load a new address.

 

 

ADV/LD

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

LOW, a new address can be loaded into the device for an access. After being deselected,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADV/LD must be driven LOW to load a new address.

 

 

CLK

Input-

Clock Input. Captures all synchronous inputs to the device. CLK is qualified with

 

 

 

 

CEN.

 

 

 

 

 

 

 

 

 

 

 

 

Clock

CLK is only recognized if CEN is active LOW.

 

 

 

1

 

Input-

Chip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

with CE2 and CE3 to select or deselect the device.

 

 

CE2

Input-

Chip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

conjunction with CE1 and CE3 to select or deselect the device.

 

 

 

3

 

Input-

Chip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

with CE1 and CE2 to select or deselect the device.

 

 

 

 

 

 

Input-

Output Enable, Asynchronous Input, Active LOW. Combined with the synchronous logic

 

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

block inside the device to control the direction of the IO pins. When LOW, the IO pins are

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

enabled to behave as outputs. When deasserted HIGH, IO pins are tri-stated, and act as

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

input data pins. OE is masked during the data portion of a write sequence, during the first

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

clock when emerging from a deselected state, when the device has been deselected.

 

 

 

 

 

 

 

 

Input-

Clock Enable Input, Active LOW. When asserted LOW the clock signal is recognized by

 

 

CEN

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

the SRAM. When deasserted HIGH the clock signal is masked. Because deasserting CEN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

does not deselect the device, CEN can be used to extend the previous cycle when required.

 

 

ZZ

Input-

ZZ “Sleep” Input. This active HIGH input places the device in a non-time-critical “sleep”

 

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

condition with data integrity preserved. For normal operation, this pin has to be LOW or left

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

floating. ZZ pin has an internal pull down.

 

 

DQs

IO-

Bidirectional Data IO Lines. As inputs, they feed into an on-chip data register that is

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

triggered by the rising edge of CLK. As outputs, they deliver the data contained in the

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

memory location specified by the addresses presented during the previous clock rise of the

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

pins behave as outputs. When HIGH, DQs and DQPX are placed in a tri-state condition.The

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

outputs are automatically tri-stated during the data portion of a write sequence, during the

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

first clock when emerging from a deselected state, and when the device is deselected,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

regardless of the state of OE.

 

 

DQPX

IO-

Bidirectional Data Parity IO Lines. Functionally, these signals are identical to DQs. During

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

write sequences, DQPX is controlled by BWX correspondingly.

 

 

MODE

Input Strap Pin

Mode Input. Selects the burst order of the device.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

interleaved burst sequence.

 

 

VDD

Power Supply

Power supply inputs to the core of the device.

 

 

VDDQ

IO Power Supply

Power supply for the IO circuitry.

 

 

VSS

Ground

Ground for the device.

 

 

TDO

JTAG serial output

Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

JTAG feature is not used, this pin must be left unconnected. This pin is not available on

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TQFP packages.

Document #: 38-05287 Rev. *I

 

 

 

 

 

 

Page 8 of 32

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Contents Features Functional Description1Selection Guide 133 MHz 100 MHz UnitLogic Block Diagram CY7C1471V25 2M x Logic Block Diagram CY7C1473V25 4M xLogic Block Diagram CY7C1475V25 1M x Pin Configurations Pin Tqfp Pinout CY7C1471V25CY7C1473V25 CY7C1473V25 4M x ADV/LD Pin Definitions Single Read Accesses Burst Read AccessesSingle Write Accesses Functional OverviewZZ Mode Electrical Characteristics Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND Used Truth TableAddress Operation Function BW b BW a Truth Table for Read/WriteFunction Ieee 1149.1 Serial Boundary Scan Jtag TAP Controller State DiagramTAP Controller Block Diagram TAP Registers TAP Instruction SetTAP Timing BypassTAP AC Switching Characteristics Parameter Description Min Max Unit ClockOutput Times Hold Times5V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions8V TAP AC Test Conditions Scan Register Sizes Identification CodesRegister Name Bit Size Instruction Code DescriptionBit # Ball ID Boundary Scan Exit Order 2M xBoundary Scan Exit Order 4M x Boundary Scan Exit Order 1M x P10W10 V10Operating Range Electrical CharacteristicsMaximum Ratings AC Test Loads and Waveforms CapacitanceThermal Resistance Switching Characteristics Setup TimesParameter Description 133 MHz 100 MHz Unit Min CENRead Switching WaveformsRite Address QA2Stall Stall NOPDON’T Care Ordering Information Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Issue Orig. Description of Change Date Document HistoryVKN VKN/AESA