Cypress CY7C1464AV25, CY7C1462AV25 Capacitance16, Thermal Resistance, AC Test Loads and Waveforms

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CY7C1460AV25

CY7C1462AV25

CY7C1464AV25

Capacitance[16]

Parameter	Description	Test Conditions	100 TQFP	165 FBGA	209 FBGA	Unit
Parameter	Description	Test Conditions	Max.	Max.	Max.	Unit

CIN	Input Capacitance	TA = 25°C, f = 1 MHz,	6.5	7	5	pF
		VDD = 2.5V VDDQ = 2.5V
CCLK	Clock Input Capacitance	VDD = 2.5V VDDQ = 2.5V	3	7	5	pF
CI/O	Input/Output Capacitance		5.5	6	7	pF
Thermal Resistance[16]

	Parameters	Description	Test Conditions	100 TQFP	165 FBGA	209 FBGA	Unit
	Parameters	Description	Test Conditions	Package	Package	Package	Unit

	ΘJA	Thermal Resistance	Test conditions follow standard	25.21	20.8	25.31	°C/W
		(Junction to Ambient)	test methods and procedures
			for measuring thermal
	ΘJC	Thermal Resistance	for measuring thermal	2.58	3.2	4.48	°C/W
	ΘJC	Thermal Resistance	impedance, per EIA/JESD51.	2.58	3.2	4.48	°C/W
		(Junction to Case)

AC Test Loads and Waveforms

3.3V I/O Test Load

R = 317Ω

OUTPUT

3.3V

Z0

= 50Ω

OUTPUT

RL

= 50Ω

5 pF

R = 351Ω

INCLUDING

VT = 1.5V

JIG AND

SCOPE

(a)

(b)

2.5V I/O Test Load

R = 1667Ω

OUTPUT

2.5V

Z0

= 50Ω

OUTPUT

RL

= 50Ω

5 pF

R = 1538Ω

INCLUDING

VT = 1.25V

JIG AND

(a)

SCOPE

(b)

Note:

16. Tested initially and after any design or process change that may affect these parameters.

ALL INPUT PULSES

VDDQ

90%

10%

GND

≤ 1ns

(c)

VDDQ

ALL INPUT PULSES

90%

10%

GND

≤ 1ns

(c)

90%

10%

≤ 1ns

90%

10%

≤ 1ns

Document #: 38-05354 Rev. *D

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Contents Functional Description FeaturesLogic Block Diagram-CY7C1460AV25 1M x Cypress Semiconductor CorporationSelection Guide Logic Block Diagram-CY7C1462AV25 2M xLogic Block Diagram-CY7C1464AV25 512K x 250 MHz 200 MHz 167 MHz UnitPin Configurations Pin Tqfp Pinout 2M ×CY7C1462AV25 2M × Byte Write Select Inputs, active LOW. Qualified with Pin DefinitionsPin Name Type Pin Description ADV/LDType Pin Description Power supply inputs to the core of the devicePower supply for the I/O circuitry Clock input to the Jtag circuitrySingle Write Accesses Single Read AccessesBurst Read Accesses Burst Write AccessesInterleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDZZ Mode Electrical Characteristics Function CY7C1462AV25 Partial Write Cycle Description1, 2, 3Function CY7C1460AV25 BW d BW c BW b BW a Function CY7C1464AV25Test Access Port TAP TAP Controller Block Diagram TAP Controller State DiagramDisabling the Jtag Feature Performing a TAP ResetBypass Register TAP Instruction SetOutput Times TAP TimingParameter Description Min Max Unit Clock Set-up Times8V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions Identification Register DefinitionsRegister Name Bit Size Scan Register SizesIdentification Codes Instruction Code DescriptionBall Fbga Boundary Scan Order12 CY7C1460AV25 1M x 36, CY7C1462AV25 2M x Bit# Ball IDBit# Ball ID Ball Fbga Boundary Scan Order 12 CY7C1464AV25 512K x Bit# Ball IDOperating Range Electrical Characteristics Over the Operating Range14Maximum Ratings Ambient RangeCapacitance16 Thermal ResistanceAC Test Loads and Waveforms Switching Characteristics Over the Operating Range 21 250 200 167 Parameter Description Unit Min MaxSwitching Waveforms Read/Write/Timing23, 24NOP, Stall and Deselect Cycles23, 24 ZZ Mode Timing27 DON’T CareOrdering Information 250 Package Diagrams Pin Tqfp 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm SYT ECN No Issue Date Orig. Description of ChangeDocument History RXU

CY7C1462AV25, CY7C1460AV25, CY7C1464AV25 specifications

The Cypress CY7C1464AV25, CY7C1460AV25, and CY7C1462AV25 are a family of high-performance synchronous SRAM devices that have been designed for applications requiring fast memory access and low latency. These memory chips are particularly appealing for systems in telecommunications, networking, and embedded applications due to their versatility and robust performance specifications.

One of the standout features of the CY7C1464AV25 series is their large capacities. The CY7C1464AV25 offers a capacity of 4 Megabits (512 K x 8), making it well-suited for applications that demand ample memory while maintaining high-speed operations. In contrast, the CY7C1460AV25 and CY7C1462AV25 provide slightly smaller capacities of 1 Megabit (128 K x 8) and 2 Megabits (256 K x 8) respectively, catering to varying system memory requirements.

All three devices utilize Cypress's advanced synchronous SRAM technology. This enables the chips to support burst read and write modes, allowing for rapid data transfer rates. The CY7C1464AV25 delivers a data access time of as low as 5.5 ns, making it highly efficient for data-intensive applications. Additionally, the standard operating voltage of 2.5V aids in reducing power consumption and improving overall system energy efficiency.

The chips are also characterized by a simple interface and compatibility with common bus protocols, which facilitates easy integration into existing systems. They feature a dual-port architecture, allowing multiple data transfers to occur simultaneously, significantly improving throughput.

With a commercial temperature range, all three devices offer reliability and are suited for a wide range of operating environments. The package options include a compact 44-pin TSOP, allowing for space-saving designs in modern electronics.

In summary, the Cypress CY7C1464AV25, CY7C1460AV25, and CY7C1462AV25 provide a powerful blend of capacity, speed, and efficiency, making them ideal choices for demanding applications in various sectors. Their advanced technologies and versatility make them excellent candidates for enhancing system performance while maintaining low power consumption and ensuring reliable operation in various conditions.