Cypress CY7C1460AV25, CY7C1464AV25, CY7C1462AV25 manual Switching Waveforms, Read/Write/Timing23, 24

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CY7C1460AV25

CY7C1462AV25

CY7C1464AV25

Switching Waveforms

Read/Write/Timing[23, 24, 25]

1

2 t CYC 3

CLK

 

tCENS tCENH

tCH tCL

CEN

tCES tCEH

CE

ADV/LD

WE

BWx

ADDRESS A1 A2

 

4

5

6

7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A3

A4

A5

 

tCO

 

8 9

A6 A7

10

tAS tAH

tDS tDH

tCLZ

tDOH

tOEV tCHZ

Data

D(A1)

In-Out (DQ)

OE

D(A2) D(A2+1) Q(A3) Q(A4)

tOEHZ

Q(A4+1) D(A5)

tDOH tOELZ

Q(A6)

WRITE

WRITE

BURST

D(A1)

D(A2)

WRITE

 

 

D(A2+1)

READ

READ

BURST

WRITE

READ

WRITE

Q(A3)

Q(A4)

READ

D(A5)

Q(A6)

D(A7)

 

 

Q(A4+1)

 

 

 

DESELECT

NOP, STALL and DESELECT Cycles[23, 24, 26]

1 2 3

DON’T CARE

 

UNDEFINED

 

 

 

 

4

5

6

7

8

9

10

CLK

CEN

CE

ADV/LD

WE

BWx

ADDRESS A1 A2 A3 A4 A5

tCHZ

Data

D(A1)

Q(A2)

Q(A3)

D(A4)

Q(A5)

In-Out (DQ)

 

 

 

 

 

WRITE

D(A1)

READ Q(A2)

STALL

READ Q(A3)

WRITE

D(A4)

STALL

NOP

READ Q(A5)

DESELECT

CONTINUE DESELECT

DON’T CARE

UNDEFINED

Notes:

23.For this waveform ZZ is tied low.

24.When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH,CE1 is HIGH or CE2 is LOW or CE3 is HIGH.

25.Order of the Burst sequence is determined by the status of the MODE (0=Linear, 1=Interleaved).Burst operations are optional.

26.The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrated CEN being used to create a pause. A write is not performed during this cycle.

Document #: 38-05354 Rev. *D

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Contents Features Logic Block Diagram-CY7C1460AV25 1M xFunctional Description Cypress Semiconductor CorporationLogic Block Diagram-CY7C1462AV25 2M x Logic Block Diagram-CY7C1464AV25 512K xSelection Guide 250 MHz 200 MHz 167 MHz UnitPin Configurations Pin Tqfp Pinout 2M ×CY7C1462AV25 2M × Pin Definitions Pin Name Type Pin DescriptionByte Write Select Inputs, active LOW. Qualified with ADV/LDPower supply inputs to the core of the device Power supply for the I/O circuitryType Pin Description Clock input to the Jtag circuitrySingle Read Accesses Burst Read AccessesSingle Write Accesses Burst Write AccessesZZ Mode Electrical Characteristics Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND Partial Write Cycle Description1, 2, 3 Function CY7C1460AV25 BW d BW c BW b BW aFunction CY7C1462AV25 Function CY7C1464AV25TAP Controller Block Diagram TAP Controller State Diagram Disabling the Jtag FeatureTest Access Port TAP Performing a TAP ResetBypass Register TAP Instruction SetTAP Timing Parameter Description Min Max Unit ClockOutput Times Set-up TimesTAP DC Electrical Characteristics And Operating Conditions 5V TAP AC Test Conditions8V TAP AC Test Conditions Identification Register DefinitionsScan Register Sizes Identification CodesRegister Name Bit Size Instruction Code DescriptionBit# Ball ID Ball Fbga Boundary Scan Order12CY7C1460AV25 1M x 36, CY7C1462AV25 2M x Bit# Ball ID Ball Fbga Boundary Scan Order 12 CY7C1464AV25 512K x Bit# Ball IDElectrical Characteristics Over the Operating Range14 Maximum RatingsOperating Range Ambient RangeAC Test Loads and Waveforms Capacitance16Thermal Resistance Switching Characteristics Over the Operating Range 21 250 200 167 Parameter Description Unit Min MaxNOP, Stall and Deselect Cycles23, 24 Switching WaveformsRead/Write/Timing23, 24 ZZ Mode Timing27 DON’T CareOrdering Information 250 Package Diagrams Pin Tqfp 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm ECN No Issue Date Orig. Description of Change Document HistorySYT RXU

CY7C1462AV25, CY7C1460AV25, CY7C1464AV25 specifications

The Cypress CY7C1464AV25, CY7C1460AV25, and CY7C1462AV25 are a family of high-performance synchronous SRAM devices that have been designed for applications requiring fast memory access and low latency. These memory chips are particularly appealing for systems in telecommunications, networking, and embedded applications due to their versatility and robust performance specifications.

One of the standout features of the CY7C1464AV25 series is their large capacities. The CY7C1464AV25 offers a capacity of 4 Megabits (512 K x 8), making it well-suited for applications that demand ample memory while maintaining high-speed operations. In contrast, the CY7C1460AV25 and CY7C1462AV25 provide slightly smaller capacities of 1 Megabit (128 K x 8) and 2 Megabits (256 K x 8) respectively, catering to varying system memory requirements.

All three devices utilize Cypress's advanced synchronous SRAM technology. This enables the chips to support burst read and write modes, allowing for rapid data transfer rates. The CY7C1464AV25 delivers a data access time of as low as 5.5 ns, making it highly efficient for data-intensive applications. Additionally, the standard operating voltage of 2.5V aids in reducing power consumption and improving overall system energy efficiency.

The chips are also characterized by a simple interface and compatibility with common bus protocols, which facilitates easy integration into existing systems. They feature a dual-port architecture, allowing multiple data transfers to occur simultaneously, significantly improving throughput.

With a commercial temperature range, all three devices offer reliability and are suited for a wide range of operating environments. The package options include a compact 44-pin TSOP, allowing for space-saving designs in modern electronics.

In summary, the Cypress CY7C1464AV25, CY7C1460AV25, and CY7C1462AV25 provide a powerful blend of capacity, speed, and efficiency, making them ideal choices for demanding applications in various sectors. Their advanced technologies and versatility make them excellent candidates for enhancing system performance while maintaining low power consumption and ensuring reliable operation in various conditions.
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