CY14B104L, CY14B104N

AutoStore/Power Up RECALL

Parameters

 

 

Description

CY14B104L/CY14B104N

Unit

 

 

Min

Max

 

 

 

 

 

tHRECALL [20]

 

Power Up RECALL Duration

 

20

ms

tSTORE [21]

 

STORE Cycle Duration

 

8

ms

tDELAY [22]

 

Time Allowed to Complete SRAM Cycle

1

70

μs

VSWITCH

 

Low Voltage Trigger Level

 

2.65

V

tVCCRISE

 

VCC Rise Time

150

 

μs

VHDIS[13]

 

HSB

Output Driver Disable Voltage

 

1.9

V

tHHHD

 

HSB

High Active Time

 

500

ns

tPURHH

 

HSB

Hold Time after Power-Up Recall Start

70

 

μs

tLZHSB

 

HSB

To Output Active Time

 

5

μs

Switching Waveforms

Figure 11. AutoStore or Power Up RECALL[23]

9&&

 

 

 

 

96:,7&+

 

 

 

 

9+',6

 

 

 

 

95(6(7

 

 

 

 

W9&&5,6(

1RWH

W6725(

1RWH

W6725(

+6%

W+++'

 

 

W+++'

1RWH

287

 

 

 

 

 

 

 

 

 

W385++

 

 

 

W'(/$<

 

 

 

 

 

 

 

W/=+6%

 

 

W/=+6%

 

$XWR6WRUH

 

 

 

 

 

 

 

 

 

32:(583

 

W'(/$<

 

 

 

 

 

 

 

 

5(&$//

 

 

 

 

 

W+5(&$//

 

W+5(&$//

 

 

5HDG :ULWH

 

 

 

 

 

,QKLELWHG

 

 

 

 

 

32:(583

5HDG :ULWH

%52:1287 32:(583

5HDG :ULWH

32:(5'2:1

5(&$//

 

$XWR6WRUH

5(&$//

 

$XWR6WRUH

Notes

20.tHRECALL starts from the time VCC rises above VSWITCH.

21.If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware Store takes place.

22.On a Hardware STORE, Software STORE/RECALL, AutoStore Enable/Disable and AutoStore initiation, SRAM operation continues to be enabled for time tDELAY.

23.Read and Write cycles are ignored during STORE, RECALL, and while VCC is below VSWITCH.

24.HSB pin is driven HIGH to VCC only by internal 100 kΩ resistor, HSB driver is disabled.

Document #: 001-07102 Rev. *L

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Cypress manual AutoStore/Power Up Recall, Parameters Description CY14B104L/CY14B104N Unit Min Max, Hsb