Document Number: 001-06365 Rev. *D Revised March 12, 2008 Page 28 of 28
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product and company names mentioned in this document are the trademarks of their respective holders.
CY7C1241V18, CY7C1256V18
CY7C1243V18, CY7C1245V18
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Document History Page
Document Title: CY7C1241V18/CY7C1256V18/CY7C1243V18/CY7C1245V18, 36-Mbit QDR™-II+ SRAM 4-Word Burst
Architecture (2.0 Cycle Read Latency)
Document Number: 001-06365
REV. ECN NO. ISSUE
DATE ORIG. OF
CHANGE DESCRIPTION OF CHANGE
** 425689 See ECN NXR New Data Sheet
*A 461639 See ECN NXR Revised the MPNs from
CY7C1256AV18 to CY7C1256V18
CY7C1243AV18 to CY7C1243V18
CY7C1245AV18 to CY7C1245V18
Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS,
tTMSH, tTDIH, tCH from 10 ns to 5 ns and changed tTDOV from 20 ns to 10
ns in TAP AC Switching Characteristics table
Modified Power-Up waveform
*B 497628 See ECN NXR Changed the VDDQ operating voltage to 1.4V to VDD in the Features
section, in Operating Range table and in the DC Electrical Characteristics
table
Added foot note in page# 1
Changed the Maximum rating of Ambient Temperature with Power
Applied from –10°C to +85°C to –55°C to +125°C
Changed VREF (Max.) spec from 0.85V to 0.95V in the DC Electrical
Characteristics table and in the note below the table
Updated footnote #20 to specify Overshoot and Undershoot Spec
Updated ΘJA and ΘJC values
Removed x9 part and its related information
Updated footnote #25
*C 1072841 See ECN VKN/KKVTMP Converted from preliminary to final
Added x8 and x9 parts
Changed IDD values from 950 mA to 1240 mA for 375 MHz, 850 mA to
1120 mA for 333 MHz, 800 mA to 1040 mA for 300 MHz
Changed ISB values from 300 mA to 310 mA for 375 MHz, 275 mA to 300
mA for 333 MHz, 250 mA to 280 mA for 300 MHz
Changed tCYC max spec to 8.4 ns for all speed bins
Changed ΘJA value from 12.43 °C/W to 16.25 °C/W
Updated Ordering Information table
*D 2198506 See ECN VKN/AESA Added footnote# 21related to IDD
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