Cypress CY7C1241V18, CY7C1243V18, CY7C1245V18 manual Document History, Nxr, Vkn/Kkvtmp, Vkn/Aesa

CY7C1241V18, CY7C1256V18

CY7C1243V18, CY7C1245V18

Document History Page

Document Title: CY7C1241V18/CY7C1256V18/CY7C1243V18/CY7C1245V18, 36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)

Document Number: 001-06365

REV.	ECN NO.	ISSUE	ORIG. OF	DESCRIPTION OF CHANGE
		DATE	CHANGE
**	425689	See ECN	NXR	New Data Sheet
*A	461639	See ECN	NXR	Revised the MPNs from
				CY7C1256AV18 to CY7C1256V18
				CY7C1243AV18 to CY7C1243V18
				CY7C1245AV18 to CY7C1245V18
				Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS,
				tTMSH, tTDIH, tCH from 10 ns to 5 ns and changed tTDOV from 20 ns to 10
				ns in TAP AC Switching Characteristics table
				Modified Power-Up waveform
*B	497628	See ECN	NXR	Changed the VDDQ operating voltage to 1.4V to VDD in the Features
				section, in Operating Range table and in the DC Electrical Characteristics
				table
				Added foot note in page# 1
				Changed the Maximum rating of Ambient Temperature with Power
				Applied from –10°C to +85°C to –55°C to +125°C
				Changed VREF (Max.) spec from 0.85V to 0.95V in the DC Electrical
				Characteristics table and in the note below the table
				Updated footnote #20 to specify Overshoot and Undershoot Spec
				Updated ΘJA and ΘJC values
				Removed x9 part and its related information
				Updated footnote #25
*C	1072841	See ECN	VKN/KKVTMP	Converted from preliminary to final
				Added x8 and x9 parts
				Changed IDD values from 950 mA to 1240 mA for 375 MHz, 850 mA to
				1120 mA for 333 MHz, 800 mA to 1040 mA for 300 MHz
				Changed ISB values from 300 mA to 310 mA for 375 MHz, 275 mA to 300
				mA for 333 MHz, 250 mA to 280 mA for 300 MHz
				Changed tCYC max spec to 8.4 ns for all speed bins
				Changed ΘJA value from 12.43 °C/W to 16.25 °C/W
				Updated Ordering Information table
*D	2198506	See ECN	VKN/AESA	Added footnote# 21related to IDD

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Document Number: 001-06365 Rev. *D Revised March 12, 2008 Page 28 of 28

QDR™ is a trademark of Cypress Semiconductor Corp. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document are the trademarks of their respective holders.

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