Cypress CY7C1363C, CY7C1361C manual Maximum Ratings, Operating Range, Ambient Range

CY7C1361C

CY7C1363C

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature –65°C to + 150°C

Current into Outputs (LOW)	20 mA
Static Discharge Voltage	>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current	>200 mA

Ambient Temperature with
Power Applied		–55°C to + 125°C
Supply Voltage on VDD Relative to GND		–0.5V to + 4.6V
Supply Voltage on VDDQ Relative to GND		–0.5V to + VDD
DC Voltage Applied to Outputs
in tri-state	–0.5V to VDDQ + 0.5V
DC Input Voltage	–0.5V to VDD + 0.5V

Operating Range

	Ambient
Range	Temperature	VDD	VDDQ
Commercial	0°C to +70°C	3.3V – 5%/+10%	2.5V – 5%
			to VDD
Industrial	–40°C to +85°C
Automotive	–40°C to +125°C

Electrical Characteristics Over the Operating Range [13, 14]

Parameter	Description	Test Conditions		Min.	Max.	Unit
VDD	Power Supply Voltage			3.135	3.6	V
VDDQ	I/O Supply Voltage	for 3.3V I/O		3.135	VDD	V
		for 2.5V I/O		2.375	2.625	V
VOH	Output HIGH Voltage	for 3.3V I/O, IOH = −4.0 mA		2.4		V
		for 2.5V I/O, IOH = −1.0 mA		2.0		V
VOL	Output LOW Voltage	for 3.3V I/O, IOL= 8.0 mA			0.4	V
		for 2.5V I/O, IOL= 1.0 mA			0.4	V
VIH	Input HIGH Voltage[13]	for 3.3V I/O		2.0	VDD + 0.3V	V
		for 2.5V I/O		1.7	VDD + 0.3V	V
VIL	Input LOW Voltage[13]	for 3.3V I/O		–0.3	0.8	V
		for 2.5V I/O		–0.3	0.7	V
IX	Input Leakage Current	GND ≤ VI ≤ VDDQ		–5	5	∝A
	except ZZ and MODE
	Input Current of MODE	Input = VSS		–30		∝A
		Input = VDD			5	∝A
	Input Current of ZZ	Input = VSS		–5		∝A
		Input = VDD			30	∝A
IOZ	Output Leakage Current	GND < VI < VDDQ, Output Disabled		–5	5	∝A
IDD	VDD Operating Supply	VDD = Max., IOUT = 0 mA,	7.5-ns cycle,133 MHz		250	mA
	Current	f = fMAX = 1/tCYC
			10-ns cycle,100 MHz		180
ISB1	Automatic CE	Max. VDD, Device Deselected,	All speeds (Comm/Ind’l)		110	mA
	Power-down	VIN> VIH or VIN < VIL, f = fMAX,
			10-ns cycle,100 MHz		150	mA
	Current—TTL Inputs	inputs switching	(Automotive)
ISB2	Automatic CE	Max. VDD, Device Deselected,	All speeds		40	mA
	Power-down	VIN > VDD – 0.3V or VIN < 0.3V,
	Current—CMOS Inputs	f = 0, inputs static
ISB3	Automatic CE	Max. VDD, Device Deselected,	All speeds (Comm/Ind’l)		100	mA
	Power-down	VIN > VDDQ – 0.3V or VIN < 0.3V,
			10-ns cycle,100 MHz		120	mA
	Current—CMOS Inputs	f = fMAX, inputs switching	(Automotive)
ISB4	Automatic CE	Max. VDD, Device Deselected,	All speeds (Comm/Ind’l)		40	mA
	Power-down	VIN > VIH or VIN < VIL
			10-ns cycle,100 MHz		60	mA
	Current—TTL Inputs	f = 0, inputs static	(Automotive)

Notes:

13.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).

14.TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05541 Rev. *F Page 19 of 31

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