CY7C1361C
CY7C1363C
Document #: 38-05541 Rev. *F Page 19 of 31
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied............................................–55°C to + 125°C
Supply Voltage on VDD Relative to GND.......–0.5V to + 4.6V
Supply Voltage on VDDQ Relative to GND.....–0.5V to + VDD
DC Voltage Applied to Outputs
in tri-state............................................ –0.5V to VDDQ + 0.5V
DC Input Voltage....................................–0.5V to VDD + 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range Ambient
Tempe ratu re VDD VDDQ
Commercial 0°C to +70°C 3.3V – 5%/+10% 2.5V – 5%
to VDD
Industrial –40°C to +85°C
Automotive –40°C to +125°C
Electrical Characteristics Over the Operating Range [13, 14]
Parameter Description Test Conditions Min. Max. Unit
VDD Power Supply Voltage 3.135 3.6 V
VDDQ I/O Supply Voltage for 3.3V I/O 3.135 VDD V
for 2.5V I/O 2.375 2.625 V
VOH Output HIGH Voltage for 3.3V I/O, IOH = −4.0 mA 2.4 V
for 2.5V I/O, IOH = −1.0 mA 2.0 V
VOL Output LOW Voltage for 3.3V I/O, IOL= 8.0 mA 0.4 V
for 2.5V I/O, IOL= 1.0 mA 0.4 V
VIH Input HIGH Voltage[13] for 3.3V I/O 2.0 VDD + 0.3V V
for 2.5V I/O 1.7 VDD + 0.3V V
VIL Input LOW Voltage[13] for 3.3V I/O –0.3 0.8 V
for 2.5V I/O –0.3 0.7 V
IXInput Leakage Current
except ZZ and MODE GND ≤ VI ≤ VDDQ –5 5µA
Input Current of MODE Input = VSS –30 µA
Input = VDD 5µA
Input Current of ZZ Input = VSS –5 µA
Input = VDD 30 µA
IOZ Output Leakage Current GND < VI < VDDQ, Output Disabled –5 5µA
IDD VDD Operating Supply
Current VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
7.5-ns cycle,133 MHz 250 mA
10-ns cycle,100 MHz 180
ISB1 Automatic CE
Power-down
Current—TTL Inputs
Max. VDD, Device Deselected,
VIN> VIH or VIN < VIL, f = fMAX,
inputs switching
All speeds (Comm/Ind’l) 110 mA
10-ns cycle,100 MHz
(Automotive) 150 mA
ISB2 Automatic CE
Power-down
Current—CMOS Inputs
Max. VDD, Device Deselected,
VIN > VDD – 0.3V or VIN < 0.3V,
f = 0, inputs static
All speeds 40 mA
ISB3 Automatic CE
Power-down
Current—CMOS Inputs
Max. VDD, Device Deselected,
VIN > VDDQ – 0.3V or VIN < 0.3V,
f = fMAX, inputs switching
All speeds (Comm/Ind’l) 100 mA
10-ns cycle,100 MHz
(Automotive) 120 mA
ISB4 Automatic CE
Power-down
Current—TTL Inputs
Max. VDD, Device Deselected,
VIN > VIH or VIN < VIL
f = 0, inputs static
All speeds (Comm/Ind’l) 40 mA
10-ns cycle,100 MHz
(Automotive) 60 mA
Notes:
13.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).
14.TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200ms. During this time VIH < VDD and VDDQ < VDD.
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