Cypress CY7C1387FV25, CY7C1387DV25 manual ZZ Mode Electrical Characteristics, Operation Add. Used

CY7C1386DV25, CY7C1386FV25

CY7C1387DV25, CY7C1387FV25

ZZ Mode Electrical Characteristics

Parameter

Description

Test Conditions

Min.

Max.

Unit

IDDZZ

Sleep mode standby current

ZZ > VDD – 0.2V

80

mA

tZZS

Device operation to ZZ

ZZ > VDD – 0.2V

2tCYC

ns

tZZREC

ZZ recovery time

ZZ < 0.2V

2tCYC

ns

tZZI

ZZ Active to sleep current

This parameter is sampled

2tCYC

ns

tRZZI

ZZ Inactive to exit sleep current

This parameter is sampled

0

ns

Truth Table [4, 5, 6, 7, 8, 9]

Operation

Add. Used

CE

1

CE2

CE

3

ZZ

ADSP

ADSC

ADV

WRITE

OE

CLK

DQ

Deselect Cycle, Power Down

None

H

X

X

L

X

L

X

X

X

L-H

Tri-State

Deselect Cycle, Power Down

None

L

L

X

L

L

X

X

X

X

L-H

Tri-State

Deselect Cycle, Power Down

None

L

X

H

L

L

X

X

X

X

L-H

Tri-State

Deselect Cycle, Power Down

None

L

L

X

L

H

L

X

X

X

L-H

Tri-State

Deselect Cycle, Power Down

None

L

X

H

L

H

L

X

X

X

L-H

Tri-State

Sleep Mode, Power Down

None

X

X

X

H

X

X

X

X

X

X

Tri-State

READ Cycle, Begin Burst

External

L

H

L

L

L

X

X

X

L

L-H

Q

READ Cycle, Begin Burst

External

L

H

L

L

L

X

X

X

H

L-H

Tri-State

WRITE Cycle, Begin Burst

External

L

H

L

L

H

L

X

L

X

L-H

D

READ Cycle, Begin Burst

External

L

H

L

L

H

L

X

H

L

L-H

Q

READ Cycle, Begin Burst

External

L

H

L

L

H

L

X

H

H

L-H

Tri-State

READ Cycle, Continue Burst

Next

X

X

X

L

H

H

L

H

L

L-H

Q

READ Cycle, Continue Burst

Next

X

X

X

L

H

H

L

H

H

L-H

Tri-State

READ Cycle, Continue Burst

Next

H

X

X

L

X

H

L

H

L

L-H

Q

READ Cycle, Continue Burst

Next

H

X

X

L

X

H

L

H

H

L-H

Tri-State

WRITE Cycle, Continue Burst

Next

X

X

X

L

H

H

L

L

X

L-H

D

WRITE Cycle, Continue Burst

Next

H

X

X

L

X

H

L

L

X

L-H

D

READ Cycle, Suspend Burst

Current

X

X

X

L

H

H

H

H

L

L-H

Q

READ Cycle, Suspend Burst

Current

X

X

X

L

H

H

H

H

H

L-H

Tri-State

READ Cycle, Suspend Burst

Current

H

X

X

L

X

H

H

H

L

L-H

Q

READ Cycle, Suspend Burst

Current

H

X

X

L

X

H

H

H

H

L-H

Tri-State

WRITE Cycle, Suspend Burst

Current

X

X

X

L

H

H

H

L

X

L-H

D

WRITE Cycle, Suspend Burst

Current

H

X

X

L

X

H

H

L

X

L-H

D

Notes

4.X = Don't Care, H = Logic HIGH, L = Logic LOW.

5.WRITE = L when any one or more byte write enable signals and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.

6.The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.

7.CE1, CE2, and CE3 are available only in the TQFP package. BGA package has only 2 chip selects CE1 and CE2.

8.The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't care for the remainder of the write cycle.

9.OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).

Document Number: 38-05548 Rev. *E Page 9 of 30

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