CY7C604XX
Document Number: 001-12395 Rev *H Page 16 of 30
Maximum Ratings
Storage Temperature (TSTG) (5)-55oC to 125oC (Typical +25oC)
Supply Voltage Relative to Vss (Vdd)............. -0.5V to +4.0V
DC Input Voltage (VIO)....................Vss - 0.5V to Vdd + 0.5V
DC Voltage Applied to Tri-state (VIOZ)Vss - 0.5V to Vdd + 0.5V
Maximum Current into any Port Pin (IMIO). -25mA to +50 mA
Electro Static Discharge Voltage (ESD) (6)..................2000V
Latch-up Current (LU) (7)...........................................200 mA
Operating Conditions
Ambient Temperature (TA)..................................0oC to 70oC
Operational Die Temperature (TJ)(8)...................0oC to 85oC
DC Electrical Characteristics

DC Chip Level Specifications

Tabl e 9 lists guaranteed maximum and minimum specifications for the entire voltage and temperature ranges.
Notes
5. Higher storage temperatures reduce data retention time. Recommended storage temperature is +25°C ± 25°C. Extended duration storage temperatures above 85°C
degrade reliability.
6. Human Body Model ESD.
7. According to JESD78 standard.
8. The temperature rise from ambient to junction is package specific. See on page 27. The user must limit the power consumption to comply with this requirement.
Table 9. DC Chip Level Specifications
Parameter Description Conditions Min Typ Max Units
Vdd Supply Voltage See table titled DC POR and LVD
Specifications on page 20. 1.71 –3.6 V
IDD24 Supply Current, IMO = 24 MHz Conditions are Vdd = 3.0V, TA = 25oC,
CPU = 24 MHz
No I2C/SPI
– – 3.1 mA
IDD12 Supply Current, IMO = 12 MHz Conditions are Vdd = 3.0V, TA = 25oC,
CPU = 12 MHz
No I2C/SPI
– – 2.0 mA
IDD6 Supply Current, IMO = 6 MHz Conditions are Vdd = 3.0V, TA = 25oC,
CPU = 6 MHz
No I2C/SPI
– – 1.5 mA
ISB0 Deep Sleep Current Vdd = 3.0V, TA = 25oC, IO regulator
turned off –0.1 –μA
ISB1 Standby Current with POR, LVD, and
Sleep Timer Vdd = 3.0V, TA = 25oC, IO regulator
turned off – – 1.5 μA
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