National Instruments HPC467064 Absolute Maximum Ratings, DC Electrical Characteristics, Reset

Absolute Maximum Ratings

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.

Total Allowable Source or Sink Current	100 mA
Storage Temperature Range	b65§C to a150§C
Lead Temperature (Soldering, 10 sec.)	300§C

VCC with Respect to GND	b0.5V to 7.0V
All Other Pins	(VCC a 0.5V) to (GND b 0.5V)

Note: Absolute maximum ratings indicate limits beyond which damage to the device may occur. DC and AC electri- cal specifications are not ensured when operating the de- vice at absolute maximum ratings.

DC Electrical Characteristics

VCC e 5.0V g5% unless otherwise specified, TA e b55§C to a125§C for HPC167064 and VCC e 5.0V g 10% unless otherwise specified, TA e 0§C to 70§C for HPC467064

Symbol	Parameter			Test Conditions		Min	Max	Units
ICC1	Supply Current		VCC e max, fIN e 30.0 MHz (Note 1)				85	mA
		VCC e max, fIN e 20.0 MHz (Note 1)					70	mA
		VCC e max, fIN e 2.0 MHz (Note 1)					40	mA
ICC2	IDLE Mode Current		VCC e max, fIN e 30.0 MHz (Note 1)				6.0	mA
		VCC e max, fIN e 20.0 MHz, (Note 1)					4.5	mA
			VCC e max, fIN e 2.0 MHz, (Note 1)				1	mA
ICC3	HALT Mode Current		VCC e max, fIN e 0 kHz, (Note 1)				400	mA
		VCC e 2.5V, fIN e 0 kHz, (Note 1)					100	mA
INPUT VOLTAGE LEVELS FOR SCHMITT TRIGGERED INPUTS RESET, NMI, AND WO; AND ALSO CKI
VIH1	Logic High					0.9 V		V
						CC
VIL1	Logic Low						0.1 V	V
							CC
ALL OTHER INPUTS
VIH2	Logic High					0.7 VCC	*	V
VIL2	Logic Low					*	0.2 VCC	V
ILI1	Input Leakage Current		VIN e 0 and VIN e VCC (Note 4)				g2	mA
			VIN e 0			b3	b50
ILI2	Input Leakage Current RDY/HLD, EXUI							mA
				e 0, VIN e VCC
ILI3	Input Leakage Current B12		RESET			0.5	7	mA
ILI4	Input Leakage Current EXM		VIN e 0 and VIN e VCC (Note 4)			g10		mA
CI	Input Capacitance		(Note 2)				10	pF
CIO	I/O Capacitance		(Note 2)				20	pF
OUTPUT VOLTAGE LEVELS
VOH1	Logic High (CMOS)		IOH e b10 mA (Note 2)			VCC b 0.1	0.1	V
VOL1	Logic Low (CMOS)		IOH e 10 mA (Note 2)
VOH2	Port A/B Drive, CK2		IOH e b7 mA			2.4	0.4	V
VOL2	(A0 – A15, B10, B11, B12, B15)		IOL e 3 mA
			IOH e b1.6 mA (except
VOH3	Other Port Pin Drive, WO (open drain)				WO)	2.4	0.4	V
VOL3	(B0 – B9, B13, B14, P0 – P3)		IOL e 0.5 mA
VOH4	ST1 and ST2 Drive		IOH e b6 mA			2.4	0.4	V
VOL4			IOL e 1.6 mA
VOH5	Port A/B Drive (A0 – 15, B10, B11, B12, B15)		IOH e b1 mA			2.4	0.4	V
VOL5	when used as External Address/Data Bus		IOL e 3 mA
VRAM	RAM Keep-Alive Voltage		(Note 3)			2.5	VCC	V
IOZ	TRI-STATEÉLeakage Current		VIN e 0 and VIN e VCC				g5	mA

Note 1: ICC1, ICC2, ICC3 measured with no external drive (IOH and IOL e 0, IIH, IIL e 0 and EXM e VCC). ICC1 is measured with RESET e GND. ICC3 is measured with NMI e VCC. CKI driven to VIH1 and VIL1 with rise and fall times less than 10 ns.

Note 2: This is guaranteed by design and not tested.

Note 3: Test duration is 100 ms.

Note 4: The EPROM mode of operation for this device requires high voltage input on pins EXM/VPP, I3, I4, I5, I6 and I7. This will increase the input leakage current above the normal specification when driven to voltages greater than VCC a0.3V.

*See NORMAL RUNNING MODE.

2