Cypress CY7C1513JV18 Functional Overview, Read Operations, Write Operations, Single Clock Mode

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Functional Overview

CY7C1511JV18, CY7C1526JV18 CY7C1513JV18, CY7C1515JV18

Functional Overview

The CY7C1511JV18, CY7C1526JV18, CY7C1513JV18, CY7C1515JV18 are synchronous pipelined Burst SRAMs with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and flows out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the QDR-II completely eliminates the need to “turn-around” the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of four 8-bit data transfers in the case of CY7C1511JV18, four 9-bit data transfers in the case of CY7C1526JV18, four 18-bit data transfers in the case of CY7C1513JV18, and four 36-bit data transfers in the case of CY7C1515JV18 in two clock cycles.

This device operates with a read latency of one and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS then device behaves in QDR-I mode with a read latency of one clock cycle.

Accesses for both ports are initiated on the positive input clock

(K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is refer- enced to the output clocks (C and C, or K and K when in single clock mode).

All synchronous data inputs (D[x:0]) pass through input registers controlled by the input clocks (K and K). All synchronous data outputs (Q[x:0]) pass through output registers controlled by the rising edge of the output clocks (C and C, or K and K when in single clock mode).

All synchronous control (RPS, WPS, BWS[x:0]) inputs pass through input registers controlled by the rising edge of the input clocks (K and K).

CY7C1513JV18 is described in the following sections. The same basic descriptions apply to CY7C1511JV18, CY7C1526JV18 and CY7C1515JV18.

Read Operations

The CY7C1513JV18 is organized internally as four arrays of 1M x 18. Accesses are completed in a burst of four sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the positive input clock (K). The address presented to the address inputs is stored in the read address register. Following the next K clock rise, the corre- sponding lowest order 18-bit word of data is driven onto the Q[17:0] using C as the output timing reference. On the subse- quent rising edge of C, the next 18-bit data word is driven onto the Q[17:0]. This process continues until all four 18-bit data words have been driven out onto Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the output clock (C or C, or K or K when in single clock mode). To maintain the internal logic, each read access must be allowed to complete. Each read access consists of four 18-bit data words and takes two clock cycles to complete. Therefore, read accesses to the device can not be

initiated on two consecutive K clock rises. The internal logic of the device ignores the second read request. Read accesses can be initiated on every other K clock rise. Doing so pipelines the data flow such that data is transferred out of the device on every rising edge of the output clocks (C and C, or K and K when in single clock mode).

When the read port is deselected, the CY7C1513JV18 first completes the pending read transactions. Synchronous internal circuitry automatically tri-states the outputs following the next rising edge of the positive output clock (C). This enables for a seamless transition between devices without the insertion of wait states in a depth expanded memory.

Write Operations

Write operations are initiated by asserting WPS active at the rising edge of the positive input clock (K). On the following K clock rise the data presented to D[17:0] is latched and stored into the lower 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative input clock (K) the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. This process continues for one more cycle until four 18-bit words (a total of 72 bits) of data are stored in the SRAM. The 72 bits of data are then written into the memory array at the specified location. Therefore, write accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second write request. Write accesses can be initiated on every other rising edge of the positive input clock

(K). Doing so pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K).

When deselected, the write port ignores all inputs after the pending write operations have been completed.

Byte Write Operations

Byte write operations are supported by the CY7C1513JV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the byte write select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the byte write select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature can be used to simplify read, modify, or write operations to a byte write operation.

Single Clock Mode

The CY7C1511JV18 can be used with a single clock that controls both the input and output registers. In this mode the device recognizes only a single pair of input clocks (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remain the same in this mode. To use this mode of operation, the user must tie C and C HIGH at power on. This function is a strap option and not alterable during device operation.

Document Number: 001-12560 Rev. *C

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Contents Features ConfigurationsCY7C1511JV18, CY7C1526JV18 CY7C1513JV18, CY7C1515JV18 Functional DescriptionCY7C1511JV18, CY7C1526JV18 CY7C1513JV18, CY7C1515JV18 Logic Block Diagram CY7C1511JV18Logic Block Diagram CY7C1526JV18 Logic Block Diagram CY7C1513JV18 Logic Block Diagram CY7C1515JV18Pin Configuration 165-Ball FBGA 15 x 17 x 1.4 mm Pinout165-Ball FBGA 15 x 17 x 1.4 mm Pinout Pin Definitions CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18 CY7C1513JV18, CY7C1515JV18 Pin Definitions continuedFunctional Overview Read OperationsWrite Operations Byte Write OperationsConcurrent Transactions Depth ExpansionProgrammable Impedance Echo ClocksCY7C1511JV18, CY7C1526JV18 Application ExampleTruth Table ASICWrite Cycle Descriptions CY7C1511JV18, CY7C1526JV18 CY7C1513JV18, CY7C1515JV18 Disabling the JTAG Feature Test Access Port-Test ClockPerforming a TAP Reset IEEE 1149.1 Serial Boundary Scan JTAGIDCODE SAMPLE ZSAMPLE/PRELOAD BYPASSTAP Controller State Diagram Page 15 ofTAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsIdentification Register Definitions Scan Register SizesInstruction Codes CY7C1511JV18Boundary Scan Order Power Up Sequence in QDR-II SRAM Power Up WaveformsPower Up Sequence DLL ConstraintsElectrical Characteristics DC Electrical CharacteristicsAC Electrical Characteristics Maximum RatingsCapacitance Thermal ResistanceAC Test Loads and Waveforms PackageSwitching Characteristics ParameterSwitching Waveforms READWRITE K K RPS WPSOrdering Information Package Diagram Figure 4. 165-ball FBGA 15 x 17 x 1.40 mmDocument History Page ISSUEBurst Architecture Document Number ECN NO