CYDC256B16, CYDC128B16,CYDC064B16, CYDC128B08,CYDC064B08
Document #: 001-01638 Rev. *E Page 12 of 26
Electrical Characteristics for 3.0V Over the Operating Range
Parameter Description
CYDC256B16,
CYDC128B16,
CYDC064B16,
CYDC128B08,
CYDC064B08
CYDC256B16,
CYDC128B16,
CYDC064B16,
CYDC128B08,
CYDC064B08
Unit
-40 -55
P1 I/O
Voltag e
P2 I/O
Voltage Min. Typ. Max. Min. Typ. Max.
VOH Output HIGH Voltage (IOH = –2 mA) 3.0V (any port) 2.1 2.1 V
VOL Output LOW Voltage (IOL = 2 mA) 3.0V (any port) 0.4 0.4 V
VOL ODR ODR Output LOW Voltage (IOL = 8 mA)3.0V (any port) 0.2 0.2 V
VIH Input HIGH Voltage 3.0V (any port) 2.0 VDDIO
+ 0.2
2.0 VDDIO
+ 0.2
V
VIL Input LOW Voltage 3.0V (any port) –0.2 0.7 –0.2 0.7 V
IOZ Output Leakage Current 3.0V 3.0V –1 1 –1 1 µA
ICEX ODR ODR Output Leakage Current.
VOUT=V
CC
3.0V 3.0V –1 1 –1 1 µA
IIX Input Leakage Current 3.0V 3.0V –1 1 –1 1 µA
ICC Operating Current (VCC = Max.,
IOUT= 0 mA) Outputs Disabled
Ind. 3.0V 3.0V 49 70 42 60 mA
ISB1 Standby Current (Both Ports TTL
Level) CEL and CER ≥ VCC – 0.2,
SEML = SEMR = VCC – 0.2, f = fMAX
Ind. 3.0V 3.0V 7 10 7 10 µA
ISB2 Standby Current (One Port TTL
Level) CEL | CER ≥ VIH, f = fMAX
Ind. 3.0V 3.0V 28 40 25 35 mA
ISB3 Standby Current (Both Ports
CMOS Level) CEL & CER ≥
VCC−0.2V, SEML and SEMR >
VCC – 0.2V, f = 0
Ind. 3.0V 3.0V 6 8 6 8 µA
ISB4 Standby Current (One Port CMOS
Level) CEL | CER ≥ VIH, f= fMAX[25] Ind. 3.0V 3.0V 28 40 25 35 mA
Capacitance[26]
Parameter Description Test Conditions Max. Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz,
VCC = 3.0V
9pF
COUT Output Capacitance 10 pF
Note:
26.Tested initially and after any design or process changes that may affect these parameters.
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