Page 30 Epson Research and Development
Vancouver Design Center
S1D13505 Hardware Functional Specification
X23A-A-001-14 Issue Date: 01/02/02
MA[8:0] O 58, 60, 62,
64, 66, 67,
65, 63, 61 CO1 0utput Multiplexed memory address - see Memory Interface Timing for
functionality.
MA9 IO 56 C/TS
10utput
This is a multi-purpose pin:
For 2M byte DRAM, this is memory address bit 9 (MA9).
For asymmetrical 512K byte DRAM, this is memory address bit 9
(MA9).
For symmetrical 512K byte DRAM, this pin can be used as general
purpose IO pin 3 (GPIO3).
Note that unless configured otherwise, this pin defaults to an input and
must be driven to a valid logic level.
See “Memory Interface Pin Mapping” for summary. See Memory
Interface Timing for detailed functionality.
MA10 IO 59 C/TS
10utput
This is a multi-purpose pin:
For asymmetrical 2M byte DRAM this is memory address bit 10
(MA10).
For symmetrical 2M byte DRAM and all 512K byte DRAM this pin
can be used as general purpose IO pin 1 (GPIO1).
Note that unless configured otherwise, this pin defaults to an input and
must be driven to a valid logic level.
See “Memory Interface Pin Mapping” for summary. See Memory
Interface Timing for detailed functionality.
MA11 IO 57 C/TS
10utput
This is a multi-purpose pin:
For asymmetrical 2M byte DRAM this is memory address bit 11
(MA11).
For symmetrical 2M byte DRAM and all 512K byte DRAM this pin
can be used as general purpose IO pin 2 (GPIO2).
Note that unless configured otherwise, this pin defaults to an input and
must be driven to a valid logic level.
See “Memory Interface Pin Mapping” for summary. See Memory
Interface Timing for detailed functionality.
Table 5-2: Memory Interface Pin Descriptions (Continued)
Pin Name Type Pin # Cell RESET#
State Description