Epson Research and Development Page 41
Vancouver Design Center
Hardware Functional Specification S1D13505
Issue Date: 01/02/02 X23A-A-001-14
Table 6-5: Electrical Characteristics for VDD = 3.0V typical
Symbol Parameter Condition Min Typ Max Units
IDDS Quiescent Current Quiescent Conditions 260 uA
IIZ Input Leakage Current -1 1 µA
IOZ Output Leakage Current -1 1 µA
VOH High Level Output Voltage
VDD = min
IOL = -1.8mA (Type1),
-3.5mA (Type2)
-5mA (Type3)
VDD - 0.3 V
VOL Low Level Output Voltage
VDD = min
IOL = 1.8mA (Type1),
3.5mA (Type2)
5mA (Type3)
0.3 V
VIH High Level Input Voltage CMOS level, VDD = max 2.0 V
VIL Low Level Input Voltage CMOS level, VDD = min 0.8 V
VT+ High Level Input Voltage CMOS Schmitt,
VDD = 3.0V 2.3 V
VT- Low Level Input Voltage CMOS Schmitt,
VDD = 3.0V 0.5 V
VH1 Hysteresis Voltage CMOS Schmitt,
VDD = 3.0V 0.1 V
RPD Pull Down Resistance VI = VDD 100 200 400 k
CIInput Pin Capacitance 12 pF
COOutput Pin Capacitance 12 pF
CIO Bi-Directional Pin Capacitance 12 pF