Cypress CY7C1317CV18 manual Application Example, SRAM#1 ZQ, SRAM#2, Operation, Previous State

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CY7C1317CV18, CY7C1917CV18

CY7C1319CV18, CY7C1321CV18

Application Example

Figure 1 shows two DDR-II used in an application.

Figure 1. Application Example

SRAM#1 ZQ

DQCQ/CQ#

A LD# R/W# C C# K K#

 

DQ

 

BUS

Addresses

 

MASTER

Cycle Start#

 

(CPU

R/W#

 

or

Return CLK

Vterm = 0.75V

ASIC)

Source CLK

R = 50ohms

 

Return CLK#

 

Vterm = 0.75V

 

Source CLK#

 

 

Echo Clock1/Echo Clock#1

 

Echo Clock2/Echo Clock#2

 

R = 250ohms

SRAM#2

 

ZQ

 

 

 

 

 

DQ

CQ/CQ#

 

 

 

 

A LD# R/W# C C#

K K#

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R = 250ohms

Truth Table

The truth table for the CY7C1317CV18, CY7C1917CV18, CY7C1319CV18, and CY7C1321CV18 follows. [2, 3, 4, 5, 6, 7]

Operation

K

LD

R/W

DQ

DQ

DQ

DQ

Write Cycle:

L-H

L

L

D(A1) at K(t + 1)

D(A2) at

 

 

D(A3) at K(t + 2)

 

 

 

K(t + 1)

D(A4) at K(t + 2)

Load address; wait one cycle;

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

input write data on four consecutive K

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

and K rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle:

L-H

L

H

Q(A1) at

 

 

Q(A2) at C(t + 2)

 

 

 

Q(A4) at C(t + 3)

C(t + 1)

Q(A3) at C(t + 2)

Load address; wait one and a half cycle;

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

read data on four consecutive C and C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rising edges.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOP: No Operation

L-H

H

X

High-Z

High-Z

High-Z

High-Z

 

 

 

 

 

 

 

 

Standby: Clock Stopped

Stopped

X

X

Previous State

Previous State

Previous State

Previous State

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

2.X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.

3.Device powers up deselected with the outputs in a tri-state condition.

4.On CY7C1319CV18 and CY7C1321CV18, “A1” represents address location latched by the devices when transaction was initiated and “A2”, “A3”, “A4” represents the addresses sequence in the burst. On CY7C1317CV18 and CY7C1917CV18, “A1” represents A + ‘00’ and “A2” represents A + ‘01’, “A3” represents A + ‘10’ and “A4” represents A + ‘11’.

5.“t” represents the cycle at which a read/write operation is started. t + 1 and t + 2 are the first and second clock cycles succeeding the “t” clock cycle.

6.Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.

7.It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.

Document Number: 001-07161 Rev. *D

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Contents Functional Description FeaturesConfigurations Selection GuideDoff Logic Block Diagram CY7C1317CV18Logic Block Diagram CY7C1917CV18 CLKLogic Block Diagram CY7C1321CV18 Logic Block Diagram CY7C1319CV18BWS CY7C1317CV18 2M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1917CV18 2M xCY7C1319CV18 1M x CY7C1321CV18 512K xPin Name Pin Description Pin DefinitionsSynchronous Read/Write Input. When Referenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Programmable Impedance Depth ExpansionEcho Clocks SRAM#2 Application ExampleSRAM#1 ZQ OperationWrite Cycle Descriptions CommentsInto the device. D359 remains unaltered Write cycle description table for CY7C1321CV18 followsDevice Device. D80 and D3518 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsTAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence Power Up Sequence in DDR-II SramDLL Constraints DC Electrical Characteristics Electrical CharacteristicsMaximum Ratings Input High Voltage Vref + AC Electrical CharacteristicsInput LOW Voltage Vref Document Number 001-07161 Rev. *D Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitParameter Min Max Parameter Min Max Output Times DLL TimingSwitching Waveforms DON’T Care UndefinedOrdering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1321CV18, CY7C1917CV18, CY7C1319CV18, CY7C1317CV18 specifications

Cypress Semiconductor Corporation, a leading provider of advanced embedded memory solutions, offers a series of high-performance SRAM (Static Random Access Memory) devices ideal for a variety of applications. Among these devices are the CY7C1317CV18, CY7C1319CV18, CY7C1917CV18, and CY7C1321CV18. These components are designed to meet the growing demands for non-volatile memory in consumer electronics, automotive systems, telecommunications, and industrial applications.

The CY7C1317CV18 and CY7C1319CV18 are both 256K-bit static RAMs with distinct features. The CY7C1317CV18 offers a dual-port architecture, enabling concurrent access from multiple sources, which substantially enhances performance in data-intensive applications. On the other hand, the CY7C1319CV18 is designed for single-port access, making it ideal for simpler applications that do not require simultaneous data reads and writes.

Further extending Cypress's SRAM portfolio, the CY7C1917CV18 provides a 2M-bit memory configuration with fast access times, high-density storage, and low power consumption. It is particularly well-suited for applications needing quick data retrieval while maintaining efficiency. The architecture of the CY7C1917CV18 allows it to be integrated seamlessly into systems requiring reliable and robust data storage.

Completing the lineup is the CY7C1321CV18, which features an innovative 1M-bit SRAM design. This SRAM is known for its low latency and high speed, making it an excellent choice for high-performance computing applications. It supports a wide operating voltage range and provides a reliable solution for volatile memory needs, especially in fast caching scenarios.

These SRAM devices utilize advanced CMOS technology to achieve high speed and low power characteristics, making them competitive choices in the market. Their robust performance ensures that they satisfy the stringent requirements of various applications, including high-speed networking, graphics processing, and instrumentation.

In terms of reliability, all four devices are built to endure challenging operating conditions and provide excellent data retention. They are offered in compact packages that facilitate easy integration into PCBs, optimizing space and enhancing design flexibility. The combination of performance, low power consumption, and scalability makes Cypress's SRAM products particularly advantageous for next-generation applications across multiple industries.