Cypress CY7C1319CV18 manual Write cycle description table for CY7C1321CV18 follows, Device

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CY7C1317CV18, CY7C1917CV18

CY7C1319CV18, CY7C1321CV18

Write Cycle Descriptions

The write cycle description table for CY7C1321CV18 follows. [2, 8]

 

BWS0

 

BWS1

 

BWS2

 

BWS3

K

 

K

Comments

 

L

 

L

 

L

 

L

L–H

 

–

During the data portion of a write sequence, all four bytes (D[35:0]) are written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device.

 

 

 

 

 

 

 

 

 

 

 

 

L

 

L

 

L

 

L

–

L–H

During the data portion of a write sequence, all four bytes (D[35:0]) are written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device.

 

 

 

 

 

 

 

 

 

 

 

 

 

L

 

H

 

H

 

H

L–H

 

–

During the data portion of a write sequence, only the lower byte (D[8:0]) is written

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

into the device. D[35:9] remains unaltered.

 

L

 

H

 

H

 

H

–

L–H

During the data portion of a write sequence, only the lower byte (D[8:0]) is written

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

into the device. D[35:9] remains unaltered.

 

H

 

L

 

H

 

H

L–H

 

–

During the data portion of a write sequence, only the byte (D[17:9]) is written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device. D[8:0] and D[35:18] remains unaltered.

 

H

 

L

 

H

 

H

–

L–H

During the data portion of a write sequence, only the byte (D[17:9]) is written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device. D[8:0] and D[35:18] remains unaltered.

 

H

 

H

 

L

 

H

L–H

 

–

During the data portion of a write sequence, only the byte (D[26:18]) is written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device. D[17:0] and D[35:27] remains unaltered.

 

H

 

H

 

L

 

H

–

L–H

During the data portion of a write sequence, only the byte (D[26:18]) is written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device. D[17:0] and D[35:27] remains unaltered.

 

H

 

H

 

H

 

L

L–H

 

–

During the data portion of a write sequence, only the byte (D[35:27]) is written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device. D[26:0] remains unaltered.

 

H

 

H

 

H

 

L

–

L–H

During the data portion of a write sequence, only the byte (D[35:27]) is written into

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the device. D[26:0] remains unaltered.

 

H

 

H

 

H

 

H

L–H

 

–

No data is written into the device during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

H

 

H

 

H

 

H

–

L–H

No data is written into the device during this portion of a write operation.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Document Number: 001-07161 Rev. *D

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Contents Features ConfigurationsFunctional Description Selection GuideLogic Block Diagram CY7C1317CV18 Logic Block Diagram CY7C1917CV18Doff CLKLogic Block Diagram CY7C1319CV18 Logic Block Diagram CY7C1321CV18BWS Pin Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutCY7C1317CV18 2M x CY7C1917CV18 2M xCY7C1319CV18 1M x CY7C1321CV18 512K xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write Input. When Power Supply Inputs to the Core of the Device Power Supply Inputs for the Outputs of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Depth Expansion Programmable ImpedanceEcho Clocks Application Example SRAM#1 ZQSRAM#2 OperationWrite Cycle Descriptions CommentsWrite cycle description table for CY7C1321CV18 follows DeviceInto the device. D359 remains unaltered Device. D80 and D3518 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsTAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsIdentification Register Definitions Scan Register SizesInstruction Codes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Input High Voltage Vref +Input LOW Voltage Vref Document Number 001-07161 Rev. *D Capacitance Thermal ResistanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitParameter Min Max Parameter Min Max Output Times DLL TimingSwitching Waveforms DON’T Care UndefinedOrdering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1321CV18, CY7C1917CV18, CY7C1319CV18, CY7C1317CV18 specifications

Cypress Semiconductor Corporation, a leading provider of advanced embedded memory solutions, offers a series of high-performance SRAM (Static Random Access Memory) devices ideal for a variety of applications. Among these devices are the CY7C1317CV18, CY7C1319CV18, CY7C1917CV18, and CY7C1321CV18. These components are designed to meet the growing demands for non-volatile memory in consumer electronics, automotive systems, telecommunications, and industrial applications.

The CY7C1317CV18 and CY7C1319CV18 are both 256K-bit static RAMs with distinct features. The CY7C1317CV18 offers a dual-port architecture, enabling concurrent access from multiple sources, which substantially enhances performance in data-intensive applications. On the other hand, the CY7C1319CV18 is designed for single-port access, making it ideal for simpler applications that do not require simultaneous data reads and writes.

Further extending Cypress's SRAM portfolio, the CY7C1917CV18 provides a 2M-bit memory configuration with fast access times, high-density storage, and low power consumption. It is particularly well-suited for applications needing quick data retrieval while maintaining efficiency. The architecture of the CY7C1917CV18 allows it to be integrated seamlessly into systems requiring reliable and robust data storage.

Completing the lineup is the CY7C1321CV18, which features an innovative 1M-bit SRAM design. This SRAM is known for its low latency and high speed, making it an excellent choice for high-performance computing applications. It supports a wide operating voltage range and provides a reliable solution for volatile memory needs, especially in fast caching scenarios.

These SRAM devices utilize advanced CMOS technology to achieve high speed and low power characteristics, making them competitive choices in the market. Their robust performance ensures that they satisfy the stringent requirements of various applications, including high-speed networking, graphics processing, and instrumentation.

In terms of reliability, all four devices are built to endure challenging operating conditions and provide excellent data retention. They are offered in compact packages that facilitate easy integration into PCBs, optimizing space and enhancing design flexibility. The combination of performance, low power consumption, and scalability makes Cypress's SRAM products particularly advantageous for next-generation applications across multiple industries.
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