Cypress CY7C1917CV18, CY7C1321CV18, CY7C1319CV18, CY7C1317CV18 Boundary Scan Order, Bit # Bump ID

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CY7C1317CV18, CY7C1917CV18

CY7C1319CV18, CY7C1321CV18

Boundary Scan Order

Bit #	Bump ID	Bit #	Bump ID	Bit #	Bump ID	Bit #	Bump ID
0	6R	28	10G	56	6A	84	2J

1	6P	29	9G	57	5B	85	3K

2	6N	30	11F	58	5A	86	3J

3	7P	31	11G	59	4A	87	2K

4	7N	32	9F	60	5C	88	1K

5	7R	33	10F	61	4B	89	2L

6	8R	34	11E	62	3A	90	3L

7	8P	35	10E	63	1H	91	1M

8	9R	36	10D	64	1A	92	1L

9	11P	37	9E	65	2B	93	3N

10	10P	38	10C	66	3B	94	3M

11	10N	39	11D	67	1C	95	1N

12	9P	40	9C	68	1B	96	2M

13	10M	41	9D	69	3D	97	3P

14	11N	42	11B	70	3C	98	2N

15	9M	43	11C	71	1D	99	2P

16	9N	44	9B	72	2C	100	1P

17	11L	45	10B	73	3E	101	3R

18	11M	46	11A	74	2D	102	4R

19	9L	47	Internal	75	2E	103	4P

20	10L	48	9A	76	1E	104	5P

21	11K	49	8B	77	2F	105	5N

22	10K	50	7C	78	3F	106	5R

23	9J	51	6C	79	1G

24	9K	52	8A	80	1F

25	10J	53	7A	81	3G

26	11J	54	7B	82	2G

27	11H	55	6B	83	1J

Document Number: 001-07161 Rev. *D

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Contents Selection Guide FeaturesConfigurations Functional DescriptionCLK Logic Block Diagram CY7C1317CV18Logic Block Diagram CY7C1917CV18 DoffLogic Block Diagram CY7C1321CV18 Logic Block Diagram CY7C1319CV18BWS CY7C1917CV18 2M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1317CV18 2M xCY7C1321CV18 512K x CY7C1319CV18 1M xPin Name Pin Description Pin DefinitionsSynchronous Read/Write Input. When TDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview Programmable Impedance Depth ExpansionEcho Clocks Operation Application ExampleSRAM#1 ZQ SRAM#2Comments Write Cycle DescriptionsDevice. D80 and D3518 remains unaltered Write cycle description table for CY7C1321CV18 followsDevice Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderPower Up Sequence Power Up Sequence in DDR-II SramDLL Constraints DC Electrical Characteristics Electrical CharacteristicsMaximum Ratings Input High Voltage Vref + AC Electrical CharacteristicsInput LOW Voltage Vref Document Number 001-07161 Rev. *D Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitParameter Min Max DLL Timing Parameter Min Max Output TimesDON’T Care Undefined Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal Information

CY7C1321CV18, CY7C1917CV18, CY7C1319CV18, CY7C1317CV18 specifications

Cypress Semiconductor Corporation, a leading provider of advanced embedded memory solutions, offers a series of high-performance SRAM (Static Random Access Memory) devices ideal for a variety of applications. Among these devices are the CY7C1317CV18, CY7C1319CV18, CY7C1917CV18, and CY7C1321CV18. These components are designed to meet the growing demands for non-volatile memory in consumer electronics, automotive systems, telecommunications, and industrial applications.

The CY7C1317CV18 and CY7C1319CV18 are both 256K-bit static RAMs with distinct features. The CY7C1317CV18 offers a dual-port architecture, enabling concurrent access from multiple sources, which substantially enhances performance in data-intensive applications. On the other hand, the CY7C1319CV18 is designed for single-port access, making it ideal for simpler applications that do not require simultaneous data reads and writes.

Further extending Cypress's SRAM portfolio, the CY7C1917CV18 provides a 2M-bit memory configuration with fast access times, high-density storage, and low power consumption. It is particularly well-suited for applications needing quick data retrieval while maintaining efficiency. The architecture of the CY7C1917CV18 allows it to be integrated seamlessly into systems requiring reliable and robust data storage.

Completing the lineup is the CY7C1321CV18, which features an innovative 1M-bit SRAM design. This SRAM is known for its low latency and high speed, making it an excellent choice for high-performance computing applications. It supports a wide operating voltage range and provides a reliable solution for volatile memory needs, especially in fast caching scenarios.

These SRAM devices utilize advanced CMOS technology to achieve high speed and low power characteristics, making them competitive choices in the market. Their robust performance ensures that they satisfy the stringent requirements of various applications, including high-speed networking, graphics processing, and instrumentation.

In terms of reliability, all four devices are built to endure challenging operating conditions and provide excellent data retention. They are offered in compact packages that facilitate easy integration into PCBs, optimizing space and enhancing design flexibility. The combination of performance, low power consumption, and scalability makes Cypress's SRAM products particularly advantageous for next-generation applications across multiple industries.