Cypress manual Logic Block Diagram CY7C1317CV18, Logic Block Diagram CY7C1917CV18, Doff, Clk

Page 2

CY7C1317CV18, CY7C1917CV18

CY7C1319CV18, CY7C1321CV18

Logic Block Diagram (CY7C1317CV18)

A(18:0)

DOFF

VREF

R/W

NWS[1:0]

Address Register

CLK

Gen.

Control

Logic

Write	Write	Write	Write
Reg	Reg	Reg	Reg

Decode	512K	512K	512K	512K	Decode		8
WriteAdd.	x 8Array	x 8Array	x 8Array	x 8Array	ReadAdd.	Logic
						Output	R/W
	Read Data Reg.					Control	C
	Read Data Reg.						C
							C

32
32
16			8		CQ
	Reg.				CQ
		Reg.			CQ
			8



16			8
16	Reg.		8	8	DQ[7:0]
			8

Logic Block Diagram (CY7C1917CV18)

A(18:0)

DOFF

VREF

R/W

BWS[0]

Address Register

CLK

Gen.

Control

Logic

Write	Write	Write	Write
Reg	Reg	Reg	Reg

Decode	512K	512K	512K	512K	Decode		9
WriteAdd.	x 9Array	x 9Array	x 9Array	x 9Array	ReadAdd.	Logic
						Output	R/W
	Read Data Reg.					Control	C
	Read Data Reg.						C
							C

36
36
18	Reg.		9		CQ
18		Reg.	9		CQ
			9
			9

18			9
18	Reg.		9	9	DQ[8:0]
			9

Document Number: 001-07161 Rev. *D

Page 2 of 31

[+] Feedback

Image 2

Contents Functional Description FeaturesConfigurations Selection GuideDoff Logic Block Diagram CY7C1317CV18Logic Block Diagram CY7C1917CV18 CLKBWS Logic Block Diagram CY7C1319CV18Logic Block Diagram CY7C1321CV18 CY7C1317CV18 2M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1917CV18 2M xCY7C1319CV18 1M x CY7C1321CV18 512K xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description Referenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Echo Clocks Depth ExpansionProgrammable Impedance SRAM#2 Application ExampleSRAM#1 ZQ OperationWrite Cycle Descriptions CommentsInto the device. D359 remains unaltered Write cycle description table for CY7C1321CV18 followsDevice Device. D80 and D3518 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsTAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDDLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics Input LOW Voltage Vref Document Number 001-07161 Rev. *D AC Electrical CharacteristicsInput High Voltage Vref + Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitParameter Min Max Parameter Min Max Output Times DLL TimingSwitching Waveforms DON’T Care UndefinedOrdering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1321CV18, CY7C1917CV18, CY7C1319CV18, CY7C1317CV18 specifications

Cypress Semiconductor Corporation, a leading provider of advanced embedded memory solutions, offers a series of high-performance SRAM (Static Random Access Memory) devices ideal for a variety of applications. Among these devices are the CY7C1317CV18, CY7C1319CV18, CY7C1917CV18, and CY7C1321CV18. These components are designed to meet the growing demands for non-volatile memory in consumer electronics, automotive systems, telecommunications, and industrial applications.

The CY7C1317CV18 and CY7C1319CV18 are both 256K-bit static RAMs with distinct features. The CY7C1317CV18 offers a dual-port architecture, enabling concurrent access from multiple sources, which substantially enhances performance in data-intensive applications. On the other hand, the CY7C1319CV18 is designed for single-port access, making it ideal for simpler applications that do not require simultaneous data reads and writes.

Further extending Cypress's SRAM portfolio, the CY7C1917CV18 provides a 2M-bit memory configuration with fast access times, high-density storage, and low power consumption. It is particularly well-suited for applications needing quick data retrieval while maintaining efficiency. The architecture of the CY7C1917CV18 allows it to be integrated seamlessly into systems requiring reliable and robust data storage.

Completing the lineup is the CY7C1321CV18, which features an innovative 1M-bit SRAM design. This SRAM is known for its low latency and high speed, making it an excellent choice for high-performance computing applications. It supports a wide operating voltage range and provides a reliable solution for volatile memory needs, especially in fast caching scenarios.

These SRAM devices utilize advanced CMOS technology to achieve high speed and low power characteristics, making them competitive choices in the market. Their robust performance ensures that they satisfy the stringent requirements of various applications, including high-speed networking, graphics processing, and instrumentation.

In terms of reliability, all four devices are built to endure challenging operating conditions and provide excellent data retention. They are offered in compact packages that facilitate easy integration into PCBs, optimizing space and enhancing design flexibility. The combination of performance, low power consumption, and scalability makes Cypress's SRAM products particularly advantageous for next-generation applications across multiple industries.