Cypress CY7C1321CV18, CY7C1319CV18, CY7C1317CV18, CY7C1917CV18 manual Functional Overview

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CY7C1317CV18, CY7C1917CV18 CY7C1319CV18, CY7C1321CV18

Functional Overview

The CY7C1317CV18, CY7C1917CV18, CY7C1319CV18, and CY7C1321CV18 are synchronous pipelined Burst SRAMs equipped with a DDR interface, which operates with a read latency of one and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS the device behaves in DDR-I mode with a read latency of one clock cycle.

Accesses are initiated on the rising edge of the positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is referenced to the rising edge of the output clocks (C/C, or K/K when in single clock mode).

All synchronous data inputs (D[x:0]) pass through input registers controlled by the rising edge of the input clocks (K and K). All synchronous data outputs (Q[x:0]) pass through output registers controlled by the rising edge of the output clocks (C/C, or K/K when in single-clock mode).

All synchronous control (R/W, LD, BWS[0:X]) inputs pass through input registers controlled by the rising edge of the input clock (K).

CY7C1319CV18 is described in the following sections. The same basic descriptions apply to CY7C1317CV18, CY7C1917CV18, and CY7C1321CV18.

Write Operations

Write operations are initiated by asserting R/W LOW and LD LOW at the rising edge of the positive input clock (K). The address presented to address inputs is stored in the write address register and the least two significant bits of the address are presented to the burst counter. The burst counter increments the address in a linear fashion. On the following K clock rise the data presented to D[17:0] is latched and stored into the 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative input clock (K) the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. This process continues for one more cycle until four 18-bit words (a total of 72 bits) of data are stored in the SRAM. The 72 bits of data are then written into the memory array at the specified location. Therefore, Write accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second write request. Write accesses can be initiated on every other rising edge of the positive input clock

(K). Doing so pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K).

When Write access is deselected, the device ignores all inputs after the pending write operations are completed.

Read Operations

The CY7C1319CV18 is organized internally as four arrays of 256K x 18. Accesses are completed in a burst of four sequential 18-bit data words. Read operations are initiated by asserting R/W HIGH and LD LOW at the rising edge of the positive input clock (K). The address presented to address inputs is stored in the read address register and the least two significant bits of the address are presented to the burst counter. The burst counter increments the address in a linear fashion. Following the next K clock rise, the corresponding 18-bit word of data from this address location is driven onto Q[17:0], using C as the output timing reference. On the subsequent rising edge of C the next 18-bit data word from the address location generated by the burst counter is driven onto Q[17:0]. This process continues until all four 18-bit data words have been driven out onto Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the output clock (C or C, or K and K when in single clock mode, for 200 MHz and 250 MHz device). To maintain the internal logic, each read access must be allowed to complete. Each Read access consists of four 18-bit data words and takes two clock cycles to complete. Therefore, Read accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second read request. Read accesses can be initiated on every other K clock rise. Doing so pipelines the data flow such that data is transferred out of the device on every rising edge of the output clocks (C/C or K/K when in single-clock mode).

The CY7C1319CV18 first completes the pending read transac- tions, when read access is deselected. Synchronous internal circuitry automatically tri-states the output following the next rising edge of the positive output clock (C). This enables a seamless transition between devices without the insertion of wait states in a depth expanded memory.

Byte Write Operations

Byte write operations are supported by the CY7C1319CV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate Byte Write Select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the Byte Write Select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature can be used to simplify read/modify/write operations to a byte write operation.

Single Clock Mode

The CY7C1319CV18 can be used with a single clock that controls both the input and output registers. In this mode the device recognizes only a single pair of input clocks (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remain the same in this mode. To use this mode of operation, tie C and C HIGH at power on. This function is a strap option and not alterable during device operation.

DDR Operation

The CY7C1319CV18 enables high-performance operation through high clock frequencies (achieved through pipelining) and double data rate mode of operation. The CY7C1319CV18 requires a single No Operation (NOP) cycle when transitioning from a read to a write cycle. At higher frequencies, some appli- cations may require a second NOP cycle to avoid contention.

If a read occurs after a write cycle, address and data for the write are stored in registers. The write information must be stored because the SRAM cannot perform the last word write to the array without conflicting with the read. The data stays in this register until the next write cycle occurs. On the first write cycle

Document Number: 001-07161 Rev. *D

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Contents Features ConfigurationsFunctional Description Selection GuideLogic Block Diagram CY7C1317CV18 Logic Block Diagram CY7C1917CV18Doff CLKBWS Logic Block Diagram CY7C1319CV18Logic Block Diagram CY7C1321CV18 Pin Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutCY7C1317CV18 2M x CY7C1917CV18 2M xCY7C1319CV18 1M x CY7C1321CV18 512K xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description Power Supply Inputs to the Core of the Device Power Supply Inputs for the Outputs of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Echo Clocks Depth ExpansionProgrammable Impedance Application Example SRAM#1 ZQSRAM#2 OperationWrite Cycle Descriptions CommentsWrite cycle description table for CY7C1321CV18 follows DeviceInto the device. D359 remains unaltered Device. D80 and D3518 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsTAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsIdentification Register Definitions Scan Register SizesInstruction Codes Register Name Bit SizeBoundary Scan Order Bit # Bump IDDLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics Input LOW Voltage Vref Document Number 001-07161 Rev. *D AC Electrical CharacteristicsInput High Voltage Vref + Capacitance Thermal ResistanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitParameter Min Max Parameter Min Max Output Times DLL TimingSwitching Waveforms DON’T Care UndefinedOrdering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1321CV18, CY7C1917CV18, CY7C1319CV18, CY7C1317CV18 specifications

Cypress Semiconductor Corporation, a leading provider of advanced embedded memory solutions, offers a series of high-performance SRAM (Static Random Access Memory) devices ideal for a variety of applications. Among these devices are the CY7C1317CV18, CY7C1319CV18, CY7C1917CV18, and CY7C1321CV18. These components are designed to meet the growing demands for non-volatile memory in consumer electronics, automotive systems, telecommunications, and industrial applications.

The CY7C1317CV18 and CY7C1319CV18 are both 256K-bit static RAMs with distinct features. The CY7C1317CV18 offers a dual-port architecture, enabling concurrent access from multiple sources, which substantially enhances performance in data-intensive applications. On the other hand, the CY7C1319CV18 is designed for single-port access, making it ideal for simpler applications that do not require simultaneous data reads and writes.

Further extending Cypress's SRAM portfolio, the CY7C1917CV18 provides a 2M-bit memory configuration with fast access times, high-density storage, and low power consumption. It is particularly well-suited for applications needing quick data retrieval while maintaining efficiency. The architecture of the CY7C1917CV18 allows it to be integrated seamlessly into systems requiring reliable and robust data storage.

Completing the lineup is the CY7C1321CV18, which features an innovative 1M-bit SRAM design. This SRAM is known for its low latency and high speed, making it an excellent choice for high-performance computing applications. It supports a wide operating voltage range and provides a reliable solution for volatile memory needs, especially in fast caching scenarios.

These SRAM devices utilize advanced CMOS technology to achieve high speed and low power characteristics, making them competitive choices in the market. Their robust performance ensures that they satisfy the stringent requirements of various applications, including high-speed networking, graphics processing, and instrumentation.

In terms of reliability, all four devices are built to endure challenging operating conditions and provide excellent data retention. They are offered in compact packages that facilitate easy integration into PCBs, optimizing space and enhancing design flexibility. The combination of performance, low power consumption, and scalability makes Cypress's SRAM products particularly advantageous for next-generation applications across multiple industries.
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