Cypress CY7C1317CV18 Identification Register Definitions, Scan Register Sizes, Instruction Codes

Page 18

CY7C1317CV18, CY7C1917CV18

CY7C1319CV18, CY7C1321CV18

Identification Register Definitions

Instruction Field

 

Value

 

Description

CY7C1317CV18

CY7C1917CV18

CY7C1319CV18

CY7C1321CV18

 

 

Revision Number

000

000

000

000

Version number.

(31:29)

 

 

 

 

 

Cypress Device ID

11010100011000101

11010100011001101

11010100011010101

11010100011100101

Defines the type of

(28:12)

 

 

 

 

SRAM.

Cypress JEDEC ID

00000110100

00000110100

00000110100

00000110100

Allows unique

(11:1)

 

 

 

 

identification of

 

 

 

 

 

SRAM vendor.

ID Register

1

1

1

1

Indicates the

Presence (0)

 

 

 

 

presence of an ID

 

 

 

 

 

register.

Scan Register Sizes

Register Name

Bit Size

Instruction

3

 

 

Bypass

1

 

 

ID

32

 

 

Boundary Scan

107

 

 

Instruction Codes

Instruction

Code

Description

EXTEST

000

Captures the input and output ring contents.

 

 

 

IDCODE

001

Loads the ID register with the vendor ID code and places the register between TDI and TDO.

 

 

This operation does not affect SRAM operation.

SAMPLE Z

010

Captures the input and output contents. Places the boundary scan register between TDI and

 

 

TDO. Forces all SRAM output drivers to a High-Z state.

RESERVED

011

Do Not Use: This instruction is reserved for future use.

 

 

 

SAMPLE/PRELOAD

100

Captures the input and output ring contents. Places the boundary scan register between TDI

 

 

and TDO. Does not affect the SRAM operation.

RESERVED

101

Do Not Use: This instruction is reserved for future use.

 

 

 

RESERVED

110

Do Not Use: This instruction is reserved for future use.

 

 

 

BYPASS

111

Places the bypass register between TDI and TDO. This operation does not affect SRAM

 

 

operation.

Document Number: 001-07161 Rev. *D

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Contents Functional Description FeaturesConfigurations Selection GuideDoff Logic Block Diagram CY7C1317CV18Logic Block Diagram CY7C1917CV18 CLKLogic Block Diagram CY7C1319CV18 Logic Block Diagram CY7C1321CV18BWS CY7C1317CV18 2M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1917CV18 2M xCY7C1319CV18 1M x CY7C1321CV18 512K xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write Input. When Referenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Depth Expansion Programmable ImpedanceEcho Clocks SRAM#2 Application ExampleSRAM#1 ZQ OperationWrite Cycle Descriptions CommentsInto the device. D359 remains unaltered Write cycle description table for CY7C1321CV18 followsDevice Device. D80 and D3518 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller followsTAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Input High Voltage Vref +Input LOW Voltage Vref Document Number 001-07161 Rev. *D Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitParameter Min Max Parameter Min Max Output Times DLL TimingSwitching Waveforms DON’T Care UndefinedOrdering Information 250 167 Package Diagram Ball Fbga 13 x 15 x 1.4 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1321CV18, CY7C1917CV18, CY7C1319CV18, CY7C1317CV18 specifications

Cypress Semiconductor Corporation, a leading provider of advanced embedded memory solutions, offers a series of high-performance SRAM (Static Random Access Memory) devices ideal for a variety of applications. Among these devices are the CY7C1317CV18, CY7C1319CV18, CY7C1917CV18, and CY7C1321CV18. These components are designed to meet the growing demands for non-volatile memory in consumer electronics, automotive systems, telecommunications, and industrial applications.

The CY7C1317CV18 and CY7C1319CV18 are both 256K-bit static RAMs with distinct features. The CY7C1317CV18 offers a dual-port architecture, enabling concurrent access from multiple sources, which substantially enhances performance in data-intensive applications. On the other hand, the CY7C1319CV18 is designed for single-port access, making it ideal for simpler applications that do not require simultaneous data reads and writes.

Further extending Cypress's SRAM portfolio, the CY7C1917CV18 provides a 2M-bit memory configuration with fast access times, high-density storage, and low power consumption. It is particularly well-suited for applications needing quick data retrieval while maintaining efficiency. The architecture of the CY7C1917CV18 allows it to be integrated seamlessly into systems requiring reliable and robust data storage.

Completing the lineup is the CY7C1321CV18, which features an innovative 1M-bit SRAM design. This SRAM is known for its low latency and high speed, making it an excellent choice for high-performance computing applications. It supports a wide operating voltage range and provides a reliable solution for volatile memory needs, especially in fast caching scenarios.

These SRAM devices utilize advanced CMOS technology to achieve high speed and low power characteristics, making them competitive choices in the market. Their robust performance ensures that they satisfy the stringent requirements of various applications, including high-speed networking, graphics processing, and instrumentation.

In terms of reliability, all four devices are built to endure challenging operating conditions and provide excellent data retention. They are offered in compact packages that facilitate easy integration into PCBs, optimizing space and enhancing design flexibility. The combination of performance, low power consumption, and scalability makes Cypress's SRAM products particularly advantageous for next-generation applications across multiple industries.
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