Cypress CY7C1917CV18 TAP Controller State Diagram, State diagram for the TAP controller follows

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CY7C1317CV18, CY7C1917CV18

CY7C1319CV18, CY7C1321CV18

TAP Controller State Diagram

The state diagram for the TAP controller follows. [9]

TEST-LOGIC RESET

TEST-LOGIC/ IDLE

1		1	1
1	SELECT	1	SELECT
	DR-SCAN		IR-SCAN
	0		0
	1		1

CAPTURE-DR		CAPTURE-IR
0		0
SHIFT-DR	0	SHIFT-IR	0
1		1
EXIT1-DR	1	EXIT1-IR	1
EXIT1-DR		EXIT1-IR
0		0
PAUSE-DR	0	PAUSE-IR	0
1		1
0		0
EXIT2-DR		EXIT2-IR
1		1
UPDATE-DR		UPDATE-IR
1		1
0		0

Note

9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.

Document Number: 001-07161 Rev. *D

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Contents Selection Guide FeaturesConfigurations Functional DescriptionCLK Logic Block Diagram CY7C1317CV18Logic Block Diagram CY7C1917CV18 DoffLogic Block Diagram CY7C1319CV18 Logic Block Diagram CY7C1321CV18BWS CY7C1917CV18 2M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1317CV18 2M xCY7C1321CV18 512K x CY7C1319CV18 1M xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write Input. When TDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview Depth Expansion Programmable ImpedanceEcho Clocks Operation Application ExampleSRAM#1 ZQ SRAM#2Comments Write Cycle DescriptionsDevice. D80 and D3518 remains unaltered Write cycle description table for CY7C1321CV18 followsDevice Into the device. D359 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Input High Voltage Vref +Input LOW Voltage Vref Document Number 001-07161 Rev. *D Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitParameter Min Max DLL Timing Parameter Min Max Output TimesDON’T Care Undefined Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal Information

CY7C1321CV18, CY7C1917CV18, CY7C1319CV18, CY7C1317CV18 specifications

Cypress Semiconductor Corporation, a leading provider of advanced embedded memory solutions, offers a series of high-performance SRAM (Static Random Access Memory) devices ideal for a variety of applications. Among these devices are the CY7C1317CV18, CY7C1319CV18, CY7C1917CV18, and CY7C1321CV18. These components are designed to meet the growing demands for non-volatile memory in consumer electronics, automotive systems, telecommunications, and industrial applications.

The CY7C1317CV18 and CY7C1319CV18 are both 256K-bit static RAMs with distinct features. The CY7C1317CV18 offers a dual-port architecture, enabling concurrent access from multiple sources, which substantially enhances performance in data-intensive applications. On the other hand, the CY7C1319CV18 is designed for single-port access, making it ideal for simpler applications that do not require simultaneous data reads and writes.

Further extending Cypress's SRAM portfolio, the CY7C1917CV18 provides a 2M-bit memory configuration with fast access times, high-density storage, and low power consumption. It is particularly well-suited for applications needing quick data retrieval while maintaining efficiency. The architecture of the CY7C1917CV18 allows it to be integrated seamlessly into systems requiring reliable and robust data storage.

Completing the lineup is the CY7C1321CV18, which features an innovative 1M-bit SRAM design. This SRAM is known for its low latency and high speed, making it an excellent choice for high-performance computing applications. It supports a wide operating voltage range and provides a reliable solution for volatile memory needs, especially in fast caching scenarios.

These SRAM devices utilize advanced CMOS technology to achieve high speed and low power characteristics, making them competitive choices in the market. Their robust performance ensures that they satisfy the stringent requirements of various applications, including high-speed networking, graphics processing, and instrumentation.

In terms of reliability, all four devices are built to endure challenging operating conditions and provide excellent data retention. They are offered in compact packages that facilitate easy integration into PCBs, optimizing space and enhancing design flexibility. The combination of performance, low power consumption, and scalability makes Cypress's SRAM products particularly advantageous for next-generation applications across multiple industries.