Cypress CY7C1319CV18, CY7C1321CV18 manual Maximum Ratings, DC Electrical Characteristics

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CY7C1317CV18, CY7C1917CV18 CY7C1319CV18, CY7C1321CV18

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with Power Applied.. –55°C to +125°C

Supply Voltage on VDD Relative to GND

–0.5V to +2.9V

Supply Voltage on VDDQ Relative to GND

–0.5V to +VDD

DC Applied to Outputs in High-Z

–0.5V to VDDQ + 0.3V

DC Input Voltage [11]

–0.5V to V + 0.3V

 

 

DD

Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage (MIL-STD-883, M 3015)....

>2001V

Latch up Current

.....................................................

 

>200 mA

Operating Range

 

 

 

 

 

 

 

 

 

Ambient

VDD [15]

VDDQ [15]

Range

 

Temperature (TA)

Commercial

 

0°C to +70°C

1.8 ± 0.1V

1.4V to

 

 

 

 

VDD

Industrial

 

–40°C to +85°C

 

Electrical Characteristics

DC Electrical Characteristics

Over the Operating Range [12]

Parameter

Description

Test Conditions

 

Min

Typ

Max

Unit

VDD

Power Supply Voltage

 

 

 

1.7

1.8

1.9

V

VDDQ

IO Supply Voltage

 

 

 

1.4

1.5

VDD

V

VOH

Output HIGH Voltage

Note 16

 

 

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOL

Output LOW Voltage

Note 17

 

 

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOH(LOW)

Output HIGH Voltage

IOH = −0.1 mA, Nominal Impedance

 

VDDQ – 0.2

 

VDDQ

V

VOL(LOW)

Output LOW Voltage

IOL = 0.1 mA, Nominal Impedance

 

VSS

 

0.2

V

VIH

Input HIGH Voltage

 

 

 

VREF + 0.1

 

VDDQ + 0.3

V

VIL

Input LOW Voltage

 

 

 

–0.3

 

VREF – 0.1

V

IX

Input Leakage Current

GND ≤ VI ≤ VDDQ

 

 

−5

 

5

μA

IOZ

Output Leakage Current

GND ≤ VI ≤ VDDQ, Output Disabled

 

−5

 

5

μA

VREF

Input Reference Voltage [18]

Typical Value = 0.75V

 

 

0.68

0.75

0.95

V

IDD [19]

VDD Operating Supply

VDD = Max,

300 MHz

(x8)

 

 

770

mA

 

 

IOUT = 0 mA,

 

 

 

 

 

 

 

 

 

(x9)

 

 

770

 

 

 

f = fMAX = 1/tCYC

 

 

 

 

 

 

 

 

 

(x18)

 

 

810

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

890

 

 

 

 

 

 

 

 

 

 

 

 

 

278 MHz

(x8)

 

 

720

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

720

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

760

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

830

 

 

 

 

 

 

 

 

 

 

 

 

 

250 MHz

(x8)

 

 

670

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

670

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

700

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

765

 

 

 

 

 

 

 

 

 

 

Notes

15.Power up: assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

16.Outputs are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.

17.Outputs are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.

18.VREF(min) = 0.68V or 0.46VDDQ, whichever is larger, VREF(max) = 0.95V or 0.54VDDQ, whichever is smaller.

19.The operation current is calculated with 50% read cycle and 50% write cycle.

Document Number: 001-07161 Rev. *D

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Contents Configurations FeaturesFunctional Description Selection GuideLogic Block Diagram CY7C1917CV18 Logic Block Diagram CY7C1317CV18Doff CLKLogic Block Diagram CY7C1319CV18 Logic Block Diagram CY7C1321CV18BWS Ball Fbga 13 x 15 x 1.4 mm Pinout Pin ConfigurationCY7C1317CV18 2M x CY7C1917CV18 2M xCY7C1321CV18 512K x CY7C1319CV18 1M xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write Input. When Power Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Depth Expansion Programmable ImpedanceEcho Clocks SRAM#1 ZQ Application ExampleSRAM#2 OperationComments Write Cycle DescriptionsDevice Write cycle description table for CY7C1321CV18 followsInto the device. D359 remains unaltered Device. D80 and D3518 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Input High Voltage Vref +Input LOW Voltage Vref Document Number 001-07161 Rev. *D Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitParameter Min Max DLL Timing Parameter Min Max Output TimesDON’T Care Undefined Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal Information

CY7C1321CV18, CY7C1917CV18, CY7C1319CV18, CY7C1317CV18 specifications

Cypress Semiconductor Corporation, a leading provider of advanced embedded memory solutions, offers a series of high-performance SRAM (Static Random Access Memory) devices ideal for a variety of applications. Among these devices are the CY7C1317CV18, CY7C1319CV18, CY7C1917CV18, and CY7C1321CV18. These components are designed to meet the growing demands for non-volatile memory in consumer electronics, automotive systems, telecommunications, and industrial applications.

The CY7C1317CV18 and CY7C1319CV18 are both 256K-bit static RAMs with distinct features. The CY7C1317CV18 offers a dual-port architecture, enabling concurrent access from multiple sources, which substantially enhances performance in data-intensive applications. On the other hand, the CY7C1319CV18 is designed for single-port access, making it ideal for simpler applications that do not require simultaneous data reads and writes.

Further extending Cypress's SRAM portfolio, the CY7C1917CV18 provides a 2M-bit memory configuration with fast access times, high-density storage, and low power consumption. It is particularly well-suited for applications needing quick data retrieval while maintaining efficiency. The architecture of the CY7C1917CV18 allows it to be integrated seamlessly into systems requiring reliable and robust data storage.

Completing the lineup is the CY7C1321CV18, which features an innovative 1M-bit SRAM design. This SRAM is known for its low latency and high speed, making it an excellent choice for high-performance computing applications. It supports a wide operating voltage range and provides a reliable solution for volatile memory needs, especially in fast caching scenarios.

These SRAM devices utilize advanced CMOS technology to achieve high speed and low power characteristics, making them competitive choices in the market. Their robust performance ensures that they satisfy the stringent requirements of various applications, including high-speed networking, graphics processing, and instrumentation.

In terms of reliability, all four devices are built to endure challenging operating conditions and provide excellent data retention. They are offered in compact packages that facilitate easy integration into PCBs, optimizing space and enhancing design flexibility. The combination of performance, low power consumption, and scalability makes Cypress's SRAM products particularly advantageous for next-generation applications across multiple industries.
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