Cypress CY7C1319CV18, CY7C1321CV18, CY7C1317CV18, CY7C1917CV18 manual 167

Page 29

CY7C1317CV18, CY7C1917CV18

CY7C1319CV18, CY7C1321CV18

Ordering Information (continued)

Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered.

Speed

Ordering Code

Package

Package Type

Operating

(MHz)

Diagram

Range

167

CY7C1317CV18-167BZC

51-85180

165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)

Commercial

 

 

 

 

 

 

CY7C1917CV18-167BZC

 

 

 

 

 

 

 

 

 

CY7C1319CV18-167BZC

 

 

 

 

 

 

 

 

 

CY7C1321CV18-167BZC

 

 

 

 

 

 

 

 

 

CY7C1317CV18-167BZXC

51-85180

165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free

 

 

 

 

 

 

 

CY7C1917CV18-167BZXC

 

 

 

 

 

 

 

 

 

CY7C1319CV18-167BZXC

 

 

 

 

 

 

 

 

 

CY7C1321CV18-167BZXC

 

 

 

 

 

 

 

 

 

CY7C1317CV18-167BZI

51-85180

165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)

Industrial

 

 

 

 

 

 

CY7C1917CV18-167BZI

 

 

 

 

 

 

 

 

 

CY7C1319CV18-167BZI

 

 

 

 

 

 

 

 

 

CY7C1321CV18-167BZI

 

 

 

 

 

 

 

 

 

CY7C1317CV18-167BZXI

51-85180

165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free

 

 

 

 

 

 

 

CY7C1917CV18-167BZXI

 

 

 

 

 

 

 

 

 

CY7C1319CV18-167BZXI

 

 

 

 

 

 

 

 

 

CY7C1321CV18-167BZXI

 

 

 

 

 

 

 

 

Document Number: 001-07161 Rev. *D

Page 29 of 31

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Contents Configurations FeaturesFunctional Description Selection GuideLogic Block Diagram CY7C1917CV18 Logic Block Diagram CY7C1317CV18Doff CLKBWS Logic Block Diagram CY7C1319CV18Logic Block Diagram CY7C1321CV18 Ball Fbga 13 x 15 x 1.4 mm Pinout Pin ConfigurationCY7C1317CV18 2M x CY7C1917CV18 2M xCY7C1321CV18 512K x CY7C1319CV18 1M xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description Power Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Echo Clocks Depth ExpansionProgrammable Impedance SRAM#1 ZQ Application ExampleSRAM#2 OperationComments Write Cycle DescriptionsDevice Write cycle description table for CY7C1321CV18 followsInto the device. D359 remains unaltered Device. D80 and D3518 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode State diagram for the TAP controller follows TAP Controller State DiagramTAP Electrical Characteristics TAP Controller Block DiagramTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderDLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics Input LOW Voltage Vref Document Number 001-07161 Rev. *D AC Electrical CharacteristicsInput High Voltage Vref + Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitParameter Min Max DLL Timing Parameter Min Max Output TimesDON’T Care Undefined Switching WaveformsOrdering Information 250 167 Ball Fbga 13 x 15 x 1.4 mm Package DiagramWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal Information

CY7C1321CV18, CY7C1917CV18, CY7C1319CV18, CY7C1317CV18 specifications

Cypress Semiconductor Corporation, a leading provider of advanced embedded memory solutions, offers a series of high-performance SRAM (Static Random Access Memory) devices ideal for a variety of applications. Among these devices are the CY7C1317CV18, CY7C1319CV18, CY7C1917CV18, and CY7C1321CV18. These components are designed to meet the growing demands for non-volatile memory in consumer electronics, automotive systems, telecommunications, and industrial applications.

The CY7C1317CV18 and CY7C1319CV18 are both 256K-bit static RAMs with distinct features. The CY7C1317CV18 offers a dual-port architecture, enabling concurrent access from multiple sources, which substantially enhances performance in data-intensive applications. On the other hand, the CY7C1319CV18 is designed for single-port access, making it ideal for simpler applications that do not require simultaneous data reads and writes.

Further extending Cypress's SRAM portfolio, the CY7C1917CV18 provides a 2M-bit memory configuration with fast access times, high-density storage, and low power consumption. It is particularly well-suited for applications needing quick data retrieval while maintaining efficiency. The architecture of the CY7C1917CV18 allows it to be integrated seamlessly into systems requiring reliable and robust data storage.

Completing the lineup is the CY7C1321CV18, which features an innovative 1M-bit SRAM design. This SRAM is known for its low latency and high speed, making it an excellent choice for high-performance computing applications. It supports a wide operating voltage range and provides a reliable solution for volatile memory needs, especially in fast caching scenarios.

These SRAM devices utilize advanced CMOS technology to achieve high speed and low power characteristics, making them competitive choices in the market. Their robust performance ensures that they satisfy the stringent requirements of various applications, including high-speed networking, graphics processing, and instrumentation.

In terms of reliability, all four devices are built to endure challenging operating conditions and provide excellent data retention. They are offered in compact packages that facilitate easy integration into PCBs, optimizing space and enhancing design flexibility. The combination of performance, low power consumption, and scalability makes Cypress's SRAM products particularly advantageous for next-generation applications across multiple industries.