Cypress CYDC064B08, CYDC064B16, CYDC256B16 Data Hold From Write End Document # 001-01638 Rev. *E

CYDC256B16, CYDC128B16,

CYDC064B16, CYDC128B08,

CYDC064B08

Switching Characteristics for VCC = 2.5V Over the Operating Range (continued)

CYDC256B16,

CYDC256B16,

CYDC128B16,

CYDC128B16,

CYDC064B16,

CYDC064B16,

CYDC128B08,

CYDC128B08,

CYDC064B08

CYDC064B08

-40

-55

Parameter

Description

Unit

Min.

Max.

Min.

Max.

Interrupt Timing[33]

tINS

INT

Set Time

35

45

ns

tINR

Reset Time

35

45

ns

INT

Semaphore Timing

tSOP

SEM Flag Update Pulse

(OE

or

SEM)

10

15

ns

tSWRD

SEM Flag Write to Read Time

10

10

ns

tSPS

SEM Flag Contention Window

10

10

ns

tSAA

SEM Address Access Time

40

55

ns

Switching Characteristics for VCC = 3.0V Over the Operating Range

					CYDC256B16,			CYDC256B16,
					CYDC128B16,			CYDC128B16,
					CYDC064B16,			CYDC064B16,
					CYDC128B08,			CYDC128B08,			Unit
					CYDC064B08			CYDC064B08
						-40			-55
	Parameter			Description
					Min.		Max.	Min.		Max.
	Read Cycle
	tRC	Read Cycle Time			40			55			ns
	tAA	Address to Data Valid					40			55	ns
	tOHA	Output Hold From Address Change			5			5			ns
	tACE[28]			LOW to Data Valid			40			55	ns
		CE
	tDOE			LOW to Data Valid			25			30	ns
		OE
	tLZOE[29, 30, 31]			Low to Low Z	1			1			ns
		OE
	tHZOE[29, 30, 31]			HIGH to High Z			15			15	ns
		OE
	tLZCE[29, 30, 31]		LOW to Low Z		1			1			ns
		CE
	tHZCE[29, 30, 31]		HIGH to High Z				15			15	ns
		CE
	tPU[31]		LOW to Power-Up		0			0			ns
		CE
	tPD[31]		HIGH to Power-Down				40			55	ns
		CE
	tABE[28]	Byte Enable Access Time					40			55	ns
	Write Cycle
	tWC	Write Cycle Time			40			55			ns
	tSCE[28]		LOW to Write End		30			45			ns
		CE
	tAW	Address Valid to Write End			30			45			ns
	tHA	Address Hold From Write End			0			0			ns
	tSA[28]	Address Set-up to Write Start			0			0			ns
	tPWE	Write Pulse Width			25			40			ns
	tSD	Data Set-up to Write End			20			30			ns
	tHD	Data Hold From Write End			0			0			ns
Document #: 001-01638 Rev. *E										Page 16 of 26

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