Cypress CY14B101P manual Document History, REV ECN no, Submission Orig. Description of Change Date

			PRELIMINARY		CY14B101P
Document History Page
Document Title: CY14B101P 1 Mbit (128K x 8) Serial SPI nvSRAM with Real Time Clock
Document Number: 001-44109
REV.	ECN NO.	Submission	Orig. of	Description of Change
		Date	Change
**	1939467	See ECN	UNC/AESA	New Data Sheet
*A	2607447	11/21/2008	GSIN/	Updated the “Feature” section, Clock rate changed from 40 MHz to 25 MHz
			GVCH/AESA	Updated nvSRAM STORE, RECALL, AutoStore Enable/Disable sections
				-- Removed Soft Sequence, added SPI instructions for STORE, RECALL,
				AutoStore Enable and Disable, Updated SPI with following changes:
				-- Added more information for protocol
				-- Added four new SPI instruction
				-- WEN bit cleared on CS going HIGH edge after Write instructions and four
				nvSRAM special instructions
				-- Added RDY bit to Status Register for indicating Store/Recall in progress
				Added READ RTC and WRITE RTC instructions.
				Changed RTC recommended configuration values.
				Updated tOCS values for normal and room temperature
				Other changes as per new EROS
				-- Removed 8 SOIC package
				-- Added two new 8DFN packages
				-- Changed tCO parameter to 9 ns
				-- Updated data sheet template
				--Replaced CY14B101P with CY14B101PA.
				Changed title to “CY14B101PA 1Mbit (128K x 8) Serial SPI nvSRAM with
				Real-Time-Clock”
*B	2654487	02/04/2009	GVCH/GSIN/	Moved from Advance information to Preliminary
			PYRS	Changed part number from CY14B101PA to CY14B101P
				Changed X1, X2 pin names to Xout, Xin respectively
				Updated pin description of VCAP pin
				Updated Device operation and SPI peripheral interface description
				Added Factory setting values for BP1, BP2 and WPEN bits
				Updated Real Time Clock operation description
				Added footnote 2
				Added default values to RTC Register Map” table 8
				Added footnote 3
				Updated flag register description in Register Map Detail” table 9
				Changed C1, C2 values to 21pF, 21pF respectively
				Changed ICC2 from 5 mA to 10 mA
				Changed IBAK value from 350 nA to 450 nA at hot temperature
				Changed VRTCcap typical value from 2.4V to 3.0V

Document #: 001-44109 Rev. *B Page 31 of 32

[+] Feedback