9-Mbit (256K x 36/512K x 18) Pipelined SRAM

CY7C1360C

CY7C1362C

CypressSemiconductor Corporation 198 Champion Court San Jose,CA 95134-1709 408-943-2600
Document #: 38-05540 Rev. *H Revised September 14, 2006

Features

Supports bus operation up to 250 MHz
Available speed grades are 250, 200, and 166 MHz
Registered inputs and outputs for pipelined operation
3.3V core power supply (VDD)
2.5V/3.3V I/O operation (VDDQ)
Fast clock-to-output times
2.8 ns (for 250-MHz device)
Provide high-performance 3-1-1-1 access rate
User-selectable burst counter supporting Intel®
Pentium® interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed writes
Asynchronous output enable
Single Cycle Chip Deselect
Available in lead-free 100-Pin TQFP package, lead-free
and non lead-free 119-Ball BGA package and 165-Ball
FBGA package
TQFP Available with 3-Chip Enable and 2-Chip Enable
IEEE 1149.1 JTAG-Compatible Boundary Scan
Functional Description[1]
The CY7C1360C/CY7C1362C SRAM integrates 256K x 36
and 512K x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable (CE1), depth-expansion Chip
Enables (CE2 and CE3[2]), Burst Control inputs (ADSC, ADSP,
and ADV), Write Enables (BWX, and BWE), and Global Write
(GW). Asynchronous inputs include the Output Enable (OE)
and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the Byte Write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1360C/CY7C1362C operates from a +3.3V core
power supply while all outputs may operate with either a +2.5
or +3.3V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Notes:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
2. CE3 is for A version of TQFP (3 Chip Enable option) and 165 FBGA package only. 119 BGA is offered only in 2 Chip Enable.
A
0, A1, A ADDRESS
REGISTER
ADV
CLK BURST
COUNTER AND
LOGIC
CLR
Q1
Q0
ADSC
BW
B
BW
A
CE
1
DQ
B,
DQP
B
WRITE REGISTER
DQ
A,
DQP
A
WRITE REGISTER
ENABLE
REGISTER
OE
SENSE
AMPS
MEMORY
ARRAY
ADSP
2
MODE
CE2
CE3
GW
BWE
PIPELINED
ENABLE
DQs
DQP
A
DQP
B
OUTPUT
REGISTERS
INPUT
REGISTERS
E
DQ
A,
DQP
A
WRITE DRIVER
OUTPUT
BUFFERS
DQ
B,
DQP
B
WRITE DRIVER
A[1:0]
ZZ SLEEP
CONTROL

Logic Block Diagram – CY7C1362C (512K x 18)

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