CY7C1360C

CY7C1362C

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

Power Applied

–55°C to +125°C

Supply Voltage on VDD Relative to GND

–0.5V to +4.6V

Supply Voltage on VDDQ Relative to GND

–0.5V to +VDD

DC Voltage Applied to Outputs

 

 

in Tri-State

–0.5V to VDDQ + 0.5V

DC Input Voltage

–0.5V to VDD + 0.5V

Current into Outputs (LOW)

20 mA

Static Discharge Voltage

> 2001V

(per MIL-STD-883, Method 3015)

 

 

Latch-up Current

> 200 mA

Operating Range

 

 

 

 

 

 

 

 

Ambient

 

 

 

Range

Temperature

 

VDD

VDDQ

Commercial

0°C to +70°C

 

3.3V –

2.5V – 5% to

 

 

 

5%/+10%

VDD

Industrial

–40°C to +85°C

 

Electrical Characteristics Over the Operating Range[14, 15]

Parameter

Description

Test Conditions

Min.

Max.

Unit

VDD

Power Supply Voltage

 

 

 

3.135

3.6

V

VDDQ

I/O Supply Voltage

for 3.3V I/O

 

3.135

VDD

V

 

 

for 2.5V I/O

 

2.375

2.625

V

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

for 3.3V I/O, IOH = –4.0 mA

 

2.4

 

V

 

 

for 2.5V I/O, IOH = –1.0 mA

 

2.0

 

V

VOL

Output LOW Voltage

for 3.3V I/O, IOL = 8.0 mA

 

 

0.4

V

 

 

for 2.5V I/O, IOL = 1.0 mA

 

 

0.4

V

VIH

Input HIGH Voltage[14]

for 3.3V I/O

 

2.0

VDD + 0.3V

V

 

 

for 2.5V I/O

 

1.7

VDD + 0.3V

V

VIL

Input LOW Voltage[14]

for 3.3V I/O

 

–0.3

0.8

V

 

 

for 2.5V I/O

 

–0.3

0.7

V

 

 

 

 

 

 

 

IX

Input Leakage Current

GND VI VDDQ

 

–5

5

A

 

except ZZ and MODE

 

 

 

 

 

 

 

Input Current of MODE

Input = VSS

 

–30

 

A

 

 

Input = VDD

 

 

5

A

 

Input Current of ZZ

Input = VSS

 

–5

 

A

 

 

Input = VDD

 

 

30

A

IOZ

Output Leakage Current

GND VI VDDQ, Output Disabled

 

–5

5

A

IDD

VDD Operating Supply

VDD = Max., IOUT = 0 mA,

 

4-ns cycle, 250 MHz

 

250

mA

 

Current

f = fMAX = 1/tCYC

 

 

 

 

 

 

 

5-ns cycle, 200 MHz

 

220

mA

 

 

 

 

6-ns cycle, 166 MHz

 

180

mA

 

 

 

 

 

 

 

 

ISB1

Automatic CE

VDD = Max, Device Deselected,

 

4-ns cycle, 250 MHz

 

130

mA

 

Power-down

VIN VIH or VIN VIL

 

 

 

 

 

 

 

5-ns cycle, 200 MHz

 

120

mA

 

Current—TTL Inputs

f = fMAX = 1/tCYC

 

 

 

 

 

 

 

6-ns cycle, 166 MHz

 

110

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB2

Automatic CE

VDD = Max, Device Deselected,

 

All speeds

 

40

mA

 

Power-down

VIN 0.3V or VIN > VDDQ – 0.3V,

 

 

 

 

 

 

Current—CMOS Inputs

f = 0

 

 

 

 

 

ISB3

Automatic CE

VDD = Max, Device Deselected, or

 

4-ns cycle, 250 MHz

 

120

mA

 

Power-down

VIN 0.3V or VIN > VDDQ – 0.3V

 

 

 

 

 

 

 

5-ns cycle, 200 MHz

 

110

mA

 

Current—CMOS Inputs

f = fMAX = 1/tCYC

 

 

 

 

 

 

 

6-ns cycle, 166 MHz

 

100

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB4

Automatic CE

VDD = Max, Device Deselected,

 

All Speeds

 

40

mA

 

Power-down

VIN VIH or VIN VIL, f = 0

 

 

 

 

 

 

Current—TTL Inputs

 

 

 

 

 

 

Notes:

 

 

 

 

 

 

 

14.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).

15.TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05540 Rev. *H

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Cypress CY7C1362C, CY7C1360C Maximum Ratings, Electrical Characteristics Over the Operating Range14, Ambient Range