CY8C24123A
CY8C24223A, CY8C24423A
Document Number: 38-12028 Rev. *I Page 20 of 56
DC Electrical Characteristics
DC Chip-Level Specifications
Tabl e 14 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5 .25V and -40°C
TA 85°C, 3.0V to 3.6V and -40°C TA 85°C, or 2.4V to 3.0V and -40°C TA 85°C, respectively. Typical parameters apply to
5V, 3.3V, and 2.7V at 25°C and are for design guidance only.
Table 14. DC Chip-Level Specifications
Symbol Description Min Typ Max Units Notes
Vdd Supply Voltage 2.4 5.25 VSee DC POR and LVD specifications,
Table 29 on page 30.
IDD Supply Current 5 8 mA Conditions are Vdd = 5.0V, T A = 25°C,
CPU = 3 MHz, SYSCLK doubler
disabled, VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 93.75 kHz,
analog power = off.
SLIMO mode = 0. IMO = 24 MHz.
IDD3 Supply Current 3.3 6.0 mA Conditions are Vdd = 3.3V, TA= 25 °C,
CPU = 3 MHz, SYSCLK doubler
disabled, VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 93.75 kHz,
analog power = off. SLIMO mode = 0.
IMO = 24 MHz.
IDD27 Supply Current 2 4 mA Conditions are Vdd = 2.7V, T A = 25°C,
CPU = 0.75 MHz, SYSCLK doubler
disabled, VC1 = 0.375 MHz,
VC2 = 23.44 kHz, VC3 = 0.09 kHz,
analog power = off. SLIMO mode = 1.
IMO = 6 MHz.
ISB Sleep (Mode) Current with POR, LVD, Sleep
Timer, and WDT.a
a. Standby current includes all functions (POR, LVD, WDT, Sleep Time) needed for reliable system operation. This must be compared with devices that have similar
functions enabled.
3 6.5 μAConditions are with internal slow
speed oscillator, Vdd = 3.3V, -40°C
TA 55°C, analog power = off.
ISBH Sleep (Mode) Current with POR, LVD, Sleep
Timer, and WDT at high temperature.a 4 25 μAConditions are with internal slow
speed oscillator, Vdd = 3.3V, 55°C < TA
85°C, analog power = off.
ISBXTL Sleep (Mode) Current with POR, LVD, Sleep
Timer, WDT, and external crystal.a 4 7.5 μAConditions are with properly loaded,
1 μW max, 32.768 kHz crystal.
Vdd = 3.3V, -40°C TA 55°C, analog
power = off.
ISBXTLH Sleep (Mode) Current with POR, LVD, Sleep
Timer, WDT, and external crystal at high
temperature.a
5 26 μAConditions are with properly loaded,
1μW max, 32.768 kHz crystal.
Vdd = 3.3 V, 55°C < TA 85°C, analog
power = off.
VREF Reference Voltage (Bandgap) 1.28 1.30 1.33 VTrimmed for appropriate Vdd.
Vdd > 3.0V
VREF27 Reference Voltage (Bandgap) 1.16 1.30 1.33 VTrimmed for appropriate Vdd.
Vdd = 2.4V to 3.0V
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