CYD01S36V
CYD02S36V/36VA/CYD04S36V
CYD09S36V/CYD18S36V
Document Number: 38-06076 Rev. *G Page 12 of 28
Maximum Ratings
Exceeding maximum ratings[25] may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature..................................–65°C to +150°C
Ambient Temperature with
Power Applied............................................ –55°C to +125°C
Supply Voltage to Ground Potential................–0.5V to +4.6V
DC Voltage Applied to
Outputs in High-Z State..........................–0.5V to VDD +0.5V
DC Input Voltage.............................. –0.5V to VDD + 0.5V[26]
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage...........................................> 2000V
(JEDEC JESD22-A114-2000B)
Latch-up Current.....................................................> 200 mA
Operating Range
Range Ambient
Tempe ratu re VDDIO/VTTL VCORE[13]
Commercial 0°C to +70°C 3.3V±165 mV 1.8V±100 mV
Industrial –40°C to +85°C 3.3V±165 mV 1.8V±100 mV
Notes
25.The voltage on any input or IO pin cannot exceed the power pin during power up.
26.Pulse width < 20 ns.
27.ISB1, ISB2, ISB3 and ISB4 are not applicable for CYD18S36V because it cannot be powered down by using chip enable pins.
28.COUT also references CIO.
29.Except INT and CNTINT which are 20 pF.
Electrical Characteristics Over the Operating Range
Parameter Description -167 -133 -100 Unit
Min Typ. Max Min Typ . Max Min Typ. Max
VOH Output HIGH Voltage (VDD = Min, IOH= –4.0 mA) 2.4 2.4 2.4 V
VOL Output LOW Voltage (VDD = Min, IOL= +4.0 mA) 0.4 0.4 0.4 V
VIH Input HIGH Voltage 2.0 2.0 2.0 V
VIL Input LOW Voltage 0.8 0.8 0.8 V
IOZ Output Leakage Current –10 10 –10 10 –10 10 μA
IIX1 Input Leakage Current Except TDI, TMS, MRST –10 10 –10 10 –10 10 μA
IIX2 Input Leakage Current TDI, TMS, MRST –1.0 0.1 –1.0 0.1 –1.0 0.1 mA
ICC Operating Current for
(VDD = Max.,IOUT = 0 mA), Outputs
Disabled
CYD01S36V
CYD02S36V/
CYD02S36VA/
CYD04S36V
225 300 225 300 mA
CYD09S36V 450 600 370 540 mA
CYD18S36V 410 580 315 450 mA
ISB1[27] Standby Current (Both Ports TTL Level)
CEL and CER VIH, f = fMAX
90 115 90 115 mA
ISB2[27] Standby Current (One Port TTL Level)
CEL | CER VIH, f = fMAX
160 210 160 210 mA
ISB3[27] Standby Current (Both Ports CMOS Level)
CEL and CER VDD – 0.2V, f = 0
55 75 55 75 mA
ISB4[27] Standby Current (One Port CMOS Level)
CEL | CER VIH, f = fMAX
160 210 160 210 mA
ISB5 Operating Current (VDDIO = Max,
Iout = 0 mA, f = 0) Outputs Disabled
CYD18S36V 75 75 mA
ICORE[13] Core Operating Current for (VDD = Max, IOUT = 0 mA),
Outputs Disabled
00 0 0 0 0mA
Capacitance
Part Number Parameter[28] Description Test Conditions Max Unit
CYD01S36/
CYD02S36V/36VA/
CYD04S36V
CIN Input Capacitance TA = 25°C, f = 1 MHz,
VDD = 3.3V
13 pF
COUT Output Capacitance 10 pF
CYD09S36V CIN Input Capacitance 22 pF
COUT Output Capacitance 10[29] pF
CYD18S36V CIN Input Capacitance 40 pF
COUT Output Capacitance 20 pF
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