Cypress CY7C1371D, CY7C1373D manual Pin Definitions

Page 7

CY7C1371D

CY7C1373D

Pin Definitions

 

 

Name

IO

Description

 

 

 

 

 

A0, A1, A

Input-

Address Inputs used to select one of the address locations. Sampled at the rising edge of the

 

 

 

 

 

 

 

 

 

 

 

Synchronous

CLK. A[1:0] are fed to the two-bit burst counter.

 

 

 

 

A,

 

 

 

Input-

Byte Write Inputs, Active LOW. Qualified with

 

to conduct writes to the SRAM. Sampled on

 

BW

BW

B

WE

 

BWC, BWD

Synchronous

the rising edge of CLK.

 

 

 

 

 

 

 

 

 

Input-

Write Enable Input, Active LOW. Sampled on the rising edge of CLK if

 

is active LOW. This

 

WE

CEN

 

 

 

 

 

 

 

 

 

 

 

Synchronous

signal must be asserted LOW to initiate a write sequence.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Advance/Load Input. Used to advance the on-chip address counter or load a new address. When

 

ADV/LD

 

 

 

 

 

 

 

 

 

 

 

Synchronous

HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new

 

 

 

 

 

 

 

 

 

 

 

 

address can be loaded into the device for an access. After being deselected, ADV/LD must be

 

 

 

 

 

 

 

 

 

 

 

 

driven LOW to load a new address.

 

 

 

 

 

 

 

CLK

Input-

Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with

 

CLK

 

CEN.

 

 

 

 

 

 

 

 

 

 

 

Clock

is only recognized if CEN is active LOW.

 

 

 

 

 

 

 

 

1

 

Input-

Chip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

CE

 

 

 

 

 

 

 

 

 

 

 

Synchronous

CE2 and CE3 to select/deselect the device.

 

CE2

Input-

Chip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in conjunction with

 

 

 

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE3 to select/deselect the device.

 

 

3

 

Input-

Chip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

CE

 

 

 

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE2 to select/deselect the device.

 

 

 

 

 

Input-

Output Enable, asynchronous input, Active LOW. Combined with the synchronous logic block

 

OE

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

inside the device to control the direction of the IO pins. When LOW, the IO pins are allowed to

 

 

 

 

 

 

 

 

 

 

 

 

behave as outputs. When deasserted HIGH, IO pins are tri-stated, and act as input data pins.

OE

 

 

 

 

 

 

 

 

 

 

 

 

 

is masked during the data portion of a write sequence, during the first clock when emerging from

 

 

 

 

 

 

 

 

 

 

 

 

a deselected state, when the device has been deselected.

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Clock Enable Input, Active LOW. When asserted LOW the Clock signal is recognized by the

 

CEN

 

 

 

 

 

 

 

 

 

 

 

Synchronous

SRAM. When deasserted HIGH the Clock signal is masked. While deasserting CEN does not

 

 

 

 

 

 

 

 

 

 

 

 

deselect the device, use CEN to extend the previous cycle when required.

 

 

 

 

 

ZZ

Input-

ZZ “Sleep” Input. This active HIGH input places the device in a non-time critical “sleep” condition

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin

 

 

 

 

 

 

 

 

 

 

 

 

has an internal pull down.

 

 

 

 

 

DQs

IO-

Bidirectional Data IO lines. As inputs, they feed into an on-chip data register that is triggered by

 

 

 

 

 

 

 

 

 

 

 

Synchronous

the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified

 

 

 

 

 

 

 

 

 

 

 

 

by the addresses presented during the previous clock rise of the read cycle. The direction of the

 

 

 

 

 

 

 

 

 

 

 

 

pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH,

 

 

 

 

 

 

 

 

 

 

 

 

DQs and DQP[A:D] are placed in a tri-state condition.The outputs are automatically tri-stated during

 

 

 

 

 

 

 

 

 

 

 

 

the data portion of a write sequence, during the first clock when emerging from a deselected state,

 

 

 

 

 

 

 

 

 

 

 

 

and when the device is deselected, regardless of the state of OE.

 

 

 

 

 

DQPX

IO-

Bidirectional Data Parity IO Lines. Functionally, these signals are identical to DQs.

 

 

 

 

 

 

 

 

 

 

 

Synchronous

 

 

 

 

 

 

 

 

 

 

MODE

Input Strap Pin

Mode Input. Selects the burst order of the device.

 

 

 

 

 

 

 

 

 

 

 

 

When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects interleaved

 

 

 

 

 

 

 

 

 

 

 

 

burst sequence.

 

 

 

 

 

VDD

Power Supply

Power supply inputs to the core of the device.

 

VDDQ

IO Power

Power supply for the IO circuitry.

 

 

 

 

 

 

 

 

 

 

 

Supply

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VSS

Ground

Ground for the device.

Document #: 38-05556 Rev. *F

Page 7 of 29

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Contents Cypress Semiconductor Corporation FeaturesSelection Guide Functional Description1 133 MHz 100 MHz UnitLogic Block Diagram CY7C1373D 1M x Logic Block Diagram CY7C1371D 512K xCY7C1371D Pin Configurations Pin Tqfp PinoutCY7C1373D Pin Configurations CE2 Pin Configurations Ball Fbga PinoutPin Definitions Functional Overview Single Read AccessesBurst Read Accesses Single Write AccessesLinear Burst Address Table Mode = GND Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics Function CY7C1373D Partial Truth Table for Read/Write 2, 3Address Operation Used Function CY7C1371DIeee 1149.1 Serial Boundary Scan Jtag TAP Controller State Diagram TAP Controller Block DiagramTAP Instruction Set Bypass RegisterExtest Output Bus Tri-State TAP TimingOutput Times TAP AC Switching Characteristics Over the Operating Range10Setup Times Parameter Description Min Max Unit Clock3V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating ConditionsParameter Description Conditions Min Max Unit Register Name Bit Size Identification Register DefinitionsScan Register Sizes Identification CodesBit # Ball ID Ball BGA Boundary Scan Order 13A10 B10 P10 Ambient Range Electrical CharacteristicsMaximum Ratings Operating RangeThermal Resistance18 Capacitance18AC Test Loads and Waveforms 133 MHz 100 MHz Parameter Description Unit Min Max Switching Characteristics Over the Operating Range23Read Switching WaveformsRead/Write Waveforms25, 26 RiteStall NOP NOP, Stall and Deselect Cycles25, 26Address StallDON’T Care ZZ Mode Timing29Ordering Information Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Ball Fbga 13 x 15 x 1.4 mm Document History Issue Orig. Description of Change Date