CY7C1371D
CY7C1373D
details) inputs is latched into the device and the write is complete. Additional accesses (Read/Write/Deselect) can be initiated on this cycle.
The data written during the Write operation is controlled by BWX signals. The CY7C1371D/CY7C1373D provides byte write capability that is described in the truth table. Asserting the Write Enable input (WE) with the selected Byte Write Select input selectively writes to only the desired bytes. Bytes not selected during a byte write operation remains unaltered. A synchronous
Because the CY7C1371D/CY7C1373D is a common IO device, data must not be driven into the device while the outputs are active. The Output Enable (OE) can be deasserted HIGH before presenting data to the DQs and DQPX inputs. Doing so
Burst Write Accesses
The CY7C1371D/CY7C1373D has an
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CE1, CE2, and CE3, must remain inactive for the duration of tZZREC after the ZZ input returns LOW.
Interleaved Burst Address Table (MODE = Floating or VDD)
First | Second | Third | Fourth |
Address | Address | Address | Address |
A1: A0 | A1: A0 | A1: A0 | A1: A0 |
00 | 01 | 10 | 11 |
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01 | 00 | 11 | 10 |
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10 | 11 | 00 | 01 |
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11 | 10 | 01 | 00 |
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Linear Burst Address Table (MODE = GND)
First | Second | Third | Fourth |
Address | Address | Address | Address |
A1: A0 | A1: A0 | A1: A0 | A1: A0 |
00 | 01 | 10 | 11 |
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01 | 10 | 11 | 00 |
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10 | 11 | 00 | 01 |
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11 | 00 | 01 | 10 |
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ZZ Mode Electrical Characteristics
Parameter | Description | Test Conditions | Min | Max | Unit |
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IDDZZ | Sleep mode standby current | ZZ > VDD – 0.2V |
| 80 | mA |
tZZS | Device operation to ZZ | ZZ > VDD – 0.2V |
| 2tCYC | ns |
tZZREC | ZZ recovery time | ZZ < 0.2V | 2tCYC |
| ns |
tZZI | ZZ active to sleep current | This parameter is sampled |
| 2tCYC | ns |
tRZZI | ZZ Inactive to exit sleep current | This parameter is sampled | 0 |
| ns |
Document #: | Page 9 of 29 |
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