CY8C22x13 Final Data Sheet | 3. Electrical Specifications |
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3.3DC Electrical Characteristics
3.3.1DC Chip-Level Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V and
Table 3-4. DC Chip-Level Specifications
Symbol | Description | Min | Typ | Max | Units | Notes | ||
Vdd | Supply Voltage | 3.00 | – | 5.25 | V |
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IDD | Supply Current | – | 5 | 8 | mA | Conditions are Vdd = 5.0V, 25 oC, CPU = 3 | ||
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| MHz, 48 MHz disabled. VC1 = 1.5 MHz, VC2 = |
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| 93.75 kHz, VC3 = 93.75 kHz. |
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IDD3 | Supply Current | – | 3.3 | 6.0 | mA | Conditions are Vdd = 3.3V, T = 25 oC, CPU = 3 | ||
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| MHz, 48 MHz = Disabled, VC1 = 1.5 MHz, VC2 |
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| = 93.75 kHz, VC3 = 93.75 kHz. |
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ISB | Sleep (Mode) Current with POR, LVD, Sleep Timer, and | – | 3 | 6.5 | ∝A | Conditions are with internal slow speed oscilla- | ||
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| WDT.a |
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| tor, Vdd = 3.3V, | |
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| A |
ISBH | Sleep (Mode) Current with POR, LVD, Sleep Timer, and | – | 4 | 25 | ∝A | Conditions are with internal slow speed oscilla- | ||
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| WDT at high temperature.a |
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| tor, Vdd = 3.3V, 55 oC < TA <= 85 oC. | |
ISBXTL | Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT, | – | 4 | 7.5 | ∝A | Conditions are with properly loaded, 1 ∝W max, | ||
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| and external crystal.a |
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| 32.768 kHz crystal. Vdd = 3.3V, | |
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| A |
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| 55 oC. |
ISBXTLH | Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT, | – | 5 | 26 | ∝A | Conditions are with properly loaded, 1 ∝W max, | ||
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| 32.768 kHz crystal. Vdd = 3.3V, 55 oC < T <= | |
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| A |
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| 85 oC. |
VREF | Reference Voltage (Bandgap) | 1.275 | 1.3 | 1.325 | V | Trimmed for appropriate Vdd. | ||
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a.Standby current includes all functions (POR, LVD, WDT, Sleep Time) needed for reliable system operation. This should be compared with devices that have similar functions enabled.
3.3.2DC General Purpose IO Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V and
Table 3-5. DC GPIO Specifications
Symbol | Description | Min | Typ | Max | Units | Notes |
RPU | Pull up Resistor | 4 | 5.6 | 8 | kΩ |
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RPD | Pull down Resistor | 4 | 5.6 | 8 | kΩ |
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VOH | High Output Level | Vdd - 1.0 | – | – | V | IOH = 10 mA, Vdd = 4.75 to 5.25V (80 mA max- |
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| imum combined IOH budget) |
VOL | Low Output Level | – | – | 0.75 | V | IOL = 25 mA, Vdd = 4.75 to 5.25V (150 mA |
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| maximum combined IOL budget) |
VIL | Input Low Level | – | – | 0.8 | V | Vdd = 3.0 to 5.25 |
VIH | Input High Level | 2.1 | – |
| V | Vdd = 3.0 to 5.25 |
VH | Input Hysterisis | – | 60 | – | mV |
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IIL | Input Leakage (Absolute Value) | – | 1 | – | nA | Gross tested to 1 ∝A. |
CIN | Capacitive Load on Pins as Input | – | 3.5 | 10 | pF | Package and pin dependent. Temp = 25oC. |
COUT | Capacitive Load on Pins as Output | – | 3.5 | 10 | pF | Package and pin dependent. Temp = 25oC. |
June 3, 2004 | Document No. | 15 |
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