Cypress CY8C22213, CY8C22113 DC Electrical Characteristics, DC Chip-Level Specifications, June 3

Models: CY8C22213 CY8C22113

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3.3DC Electrical Characteristics

CY8C22x13 Final Data Sheet

3. Electrical Specifications

 

 

3.3DC Electrical Characteristics

3.3.1DC Chip-Level Specifications

The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V and -40°C TA 85°C, or 3.0V to 3.6V and -40°C TA 85°C, respectively. Typical parameters apply to 5V and 3.3V at 25°C and are for design guidance only or unless otherwise specified.

Table 3-4. DC Chip-Level Specifications

Symbol

Description

Min

Typ

Max

Units

Notes

Vdd

Supply Voltage

3.00

5.25

V

 

 

 

 

 

 

 

 

 

 

IDD

Supply Current

5

8

mA

Conditions are Vdd = 5.0V, 25 oC, CPU = 3

 

 

 

 

 

 

 

 

MHz, 48 MHz disabled. VC1 = 1.5 MHz, VC2 =

 

 

 

 

 

 

 

 

93.75 kHz, VC3 = 93.75 kHz.

 

 

 

 

 

 

 

 

 

IDD3

Supply Current

3.3

6.0

mA

Conditions are Vdd = 3.3V, T = 25 oC, CPU = 3

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

MHz, 48 MHz = Disabled, VC1 = 1.5 MHz, VC2

 

 

 

 

 

 

 

 

= 93.75 kHz, VC3 = 93.75 kHz.

 

 

 

 

 

 

 

 

 

ISB

Sleep (Mode) Current with POR, LVD, Sleep Timer, and

3

6.5

A

Conditions are with internal slow speed oscilla-

 

 

WDT.a

 

 

 

 

tor, Vdd = 3.3V, -40 oC <= T <= 55 oC.

 

 

 

 

 

 

 

 

A

ISBH

Sleep (Mode) Current with POR, LVD, Sleep Timer, and

4

25

A

Conditions are with internal slow speed oscilla-

 

 

WDT at high temperature.a

 

 

 

 

tor, Vdd = 3.3V, 55 oC < TA <= 85 oC.

ISBXTL

Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,

4

7.5

A

Conditions are with properly loaded, 1 W max,

 

 

and external crystal.a

 

 

 

 

32.768 kHz crystal. Vdd = 3.3V, -40 oC <= T <=

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

55 oC.

ISBXTLH

Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,

5

26

A

Conditions are with properly loaded, 1 W max,

 

 

and external crystal at high temperature.a

 

 

 

 

32.768 kHz crystal. Vdd = 3.3V, 55 oC < T <=

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

85 oC.

VREF

Reference Voltage (Bandgap)

1.275

1.3

1.325

V

Trimmed for appropriate Vdd.

 

 

 

 

 

 

 

 

 

a.Standby current includes all functions (POR, LVD, WDT, Sleep Time) needed for reliable system operation. This should be compared with devices that have similar functions enabled.

3.3.2DC General Purpose IO Specifications

The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V and -40°C TA 85°C, or 3.0V to 3.6V and -40°C TA 85°C, respectively. Typical parameters apply to 5V and 3.3V at 25°C and are for design guidance only or unless otherwise specified.

Table 3-5. DC GPIO Specifications

Symbol

Description

Min

Typ

Max

Units

Notes

RPU

Pull up Resistor

4

5.6

8

k

 

RPD

Pull down Resistor

4

5.6

8

k

 

VOH

High Output Level

Vdd - 1.0

V

IOH = 10 mA, Vdd = 4.75 to 5.25V (80 mA max-

 

 

 

 

 

 

imum combined IOH budget)

VOL

Low Output Level

0.75

V

IOL = 25 mA, Vdd = 4.75 to 5.25V (150 mA

 

 

 

 

 

 

maximum combined IOL budget)

VIL

Input Low Level

0.8

V

Vdd = 3.0 to 5.25

VIH

Input High Level

2.1

 

V

Vdd = 3.0 to 5.25

VH

Input Hysterisis

60

mV

 

IIL

Input Leakage (Absolute Value)

1

nA

Gross tested to 1 A.

CIN

Capacitive Load on Pins as Input

3.5

10

pF

Package and pin dependent. Temp = 25oC.

COUT

Capacitive Load on Pins as Output

3.5

10

pF

Package and pin dependent. Temp = 25oC.

June 3, 2004

Document No. 38-12009 Rev. *E

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Cypress CY8C22213 manual DC Electrical Characteristics, DC Chip-Level Specifications, DC General Purpose IO Specifications