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CHAPTER 4 BUS INTERFACE
❍Usual DRAM interface
The usual DRAM interface converts the CAS cycle to a 2-clock cycle by setting the DSAS and
HYPR bits of DMCR4 and DCMR5 to "0". It handles "5-clock cyc le s" as ba si c bus c y cles du ring
read and write operations. This manual represents these cycles as Q1 to Q5.
The high-speed page mode provides high-speed memory access using column addresses and
CAS control on the same page pace specified by the same r ow address. When using this
mode, set 1 in the PAGE bit of DMCR4 and DMCR5.
Whether access is within the same page is determined by the PGS3 to PGS0 b its of DMCR4
and DMCR5 as well as the bus width.
Access in the high-speed page mode starts when the usual access from the Q1 to Q5 cycle
ends. When the high-speed page mode is entered, the Q4 to Q5 cycles are repea ted. Once
the page mode is entered, the RAS control signal remains at "L" unless a nonpag e access or
refresh cycle occurs.
The Q1 and Q4 wait cycles can also be set in the high-speed page mode, w here the Q4, Q4 W,
and Q5 cycles are repeated.
• Usual DRAM i nterface: Read
• Usual DRAM i nterface: Write
• Usual DRAM r ead cycle
• Usual DRAM w rite cycle
• Automati c wait cycle in usual DRAM interface
• DRAM inte rface in high-speed page mode
❍Single DRAM interface
The single DRAM interface handles a CAS access as one c lock cycle by setting "0" in the DSAS
bit of DMCR4 and DCMR5 and "1" in the HYPR bit. When using this mode, se t "1" in the PAGE
bit of DMCR4 and DMCR5 to enable the high-speed page mode.
The single DRAM interface starts from the Q1 to Q2 cycle as with the usual DRAM interface.
When the Q4 cycle is entered, the CAS signal is controlled for one cycle and a read/write
operation is performed. This manual represents the Q4 cycle for a read operatio n by "Q4SR"
and by "Q4SW" for a write operation. Note that the page size, 1CAS/2WE a nd 2CAS/1WE
setting, and Q1 wait cycle are similar to those of the usual DRAM interface.
• Single DRAM interface: Read
• Single DRAM interface: Write
• Single DRAM interface
❍Hyper DRAM interface
The hyper DRAM interface handles a CAS access as one clock cycle and fetch es an address
before data in a read cycle, thereby providing high- speed DRAM access by setting "1" in the
DSAS and HYPR bits of DMCR4 and DMCR5. Also, set "1" in the PAGE bit to enable the high-
speed page mode.
The hyper DRAM interface starts from the Q1 to Q3 cycle as with the usual DRAM interface.
When the Q4 cycle is entered, the CAS signal is controlled for one cycle and a read/write
operation is performed. This manual represents the Q4 cycle for a read operation by Q4HR and
Q4HW for a write operation. Note that the page size , 1CAS/2WE a nd 2CAS/1WE sett ing, and
Q1 wait cycle are similar to those of the usual DRAM interface .