Texas Instruments MSP430x11x1 warranty flash memory control register FCTL1

Models: MSP430x11x1

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flash memory

MSP430x11x1

MIXED SIGNAL MICROCONTROLLER

SLAS241C ± SEPTEMBER 1999 ± REVISED JUNE 2000

flash memory

The flash memory consists of 512-byte segments in the main memory and 128-byte segments in the information memory. See device memory maps for specific device information.

Segment0 to Segment7 can be erased individually, or altogether as a group.

SegmentA and SegmentB can be erased individually, or as a group with segments 0±7.

The memory in SegmentA and SegmentB is also called Information Memory.

VPP is generated internally. VCC current increases during programming.

During program/erase cycles, VCC must not drop below the minimum specified for program/erase operation.

Program and erase timings are controlled by the flash timing generatorÐno software intervention is needed. The input frequency of the flash timing generator should be in the proper range and must be applied until the write/program or erase operation is completed.

0FFFFh

Segment0 w/

 

 

 

 

0FE00h

Interrupt Vectors

 

 

0FDFFh

 

 

 

Segment1

 

 

0FC00h

 

 

 

 

 

0FBFFh

 

 

Memory

Segment2

 

0FA00h

 

 

 

 

 

 

0F9FFh

 

 

 

Segment3

 

 

0F800h

 

Main

 

 

0F7FFh

 

 

Segment4

 

 

Flash

0F600h

 

 

 

 

 

 

0F5FFh

 

 

 

Segment5

 

 

0F400h

 

 

 

 

 

0F3FFh

 

 

 

Segment6

 

 

0F200h

 

 

 

 

 

0F1FFh

 

 

 

Segment7

 

 

0F000h

 

 

 

 

 

010FFh

 

 

Information Memory

SegmentA

 

 

 

01080h

 

 

 

 

 

0107Fh

 

 

 

SegmentB

 

 

 

 

01000h

 

 

 

 

 

 

 

 

 

NOTE: All segments not implemented on all devices.

During program or erase, no code can be executed from flash memory and all interrupts must be disabled by setting the GIE, NMIE, ACCVIE, and OFIE bits to zero. If a user program requires execution concurrent with a flash program or erase operation, the program must be executed from memory other than the flash memory (e.g., boot ROM, RAM). In the event a flash program or erase operation is initiated while the program counter is pointing to the flash memory, the CPU will execute JMP $ instructions until the flash program or erase operation is completed. Normal execution of the previously running software then resumes.

Unprogrammed, new devices may have some bytes programmed in the information memory (needed for test during manufacturing). The user should perform an erase of the information memory prior to first use.

flash memory control register FCTL1

All control bits are reset during PUC. PUC is active after VCC is applied, a reset condition is applied to the

RST/NMI pin, the watchdog timer expires, a watchdog access violation occurs, or an improper flash operation has been performed. A more detailed description of the control-bit functions is found in the flash memory module description (refer to MSP430x1xx User's Guide, literature number SLAU049). Any write to control register FCTL1 during erase, mass erase, or write (programming) will end in an access violation with ACCVIFG=1. Special conditions apply for segment-write mode. Refer to MSP430x1xx User's Guide, literature number SLAU049 for details.

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Texas Instruments warranty flash memory control register FCTL1, MSP430x11x1 MIXED SIGNAL MICROCONTROLLER