NEC PD75P308 user manual Electrical Specifications, Absolute Maximum Ratings Ta = 25C

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μPD75P308

4.ELECTRICAL SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

Conditions

 

Rating

Unit

 

 

 

 

 

 

 

 

Supply Voltage

VDD

 

 

 

 

-0.3 to +7.0

V

 

 

 

 

 

 

 

 

Supply Voltage

VPP

 

 

 

 

-0.3 to +13.5

V

 

 

 

 

 

 

 

Input Voltage

VI1

Other than ports 4 or 5

 

-0.3 to VDD+0.3

V

 

 

 

 

 

 

 

 

VI2*1

Ports 4 and 5

 

Open-drain

-0.3 to +11

V

 

 

 

 

 

 

 

 

Output Voltage

VO

 

 

 

 

-0.3 to VDD+0.3

V

 

 

 

 

 

 

 

High-Level Output Current

 

1 Pin

 

-15

mA

IOH

 

 

 

 

 

 

All pins

 

-30

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

One pin

 

Peak value

30

mA

 

 

 

 

 

 

 

 

 

Effective value

15

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

Low-Level Output Current

IOH*2

Total of ports 0, 2, 3, 5

 

Peak value

100

mA

 

 

 

 

 

Effective value

60

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Peak value

100

mA

 

 

Total of ports 4, 6, 7

 

 

 

 

 

 

 

Effective value

60

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

Operating Temperature

Topt

 

 

 

 

-10 to +70

°C

 

 

 

 

 

 

 

 

Storage Temperature

Tstg

 

 

 

 

-65 to +150

°C

 

 

 

 

 

 

 

 

*1: The impedance of the power source (pull-up resistor) must be 50 KΩ minimum when a voltage higher than 10V is applied to ports 4 and 5.

2:Effective value = Peak value x Duty

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Contents Quality Grade FeaturesDescription Ordering InformationΜPD75P308 PIN ConfigurationBlock Diagram Contents PIN Functions Port PinsNON Port Pins Schmitt trigger input with hysteresis characteristics PIN INPUT/OUTPUT CircuitsInput buffer of Cmos standard COM Type F-BIN/OUT SEG Type M-C Connect capacitor between VDD and P00/INT4, Reset pinEprom Differences Between μPD75P308 and μPD75308Operation Modes for WRITING/VERIFYING Program Memory Program memory address 0 clear mode+12.5 Write mode Verify mode Program inhibit mode Or H Writing and Verifying Prom Program MemoryVDD+1 Program Memory Write ProcedureProgram Memory Read Procedure Erasure μPD75P308K only Absolute Maximum Ratings Ta = 25C Electrical SpecificationsMain System Clock Ceramic Oscillator Ta = -10 to +70C Main System Clock Oscillator Circuit CharacteristicsTa = -10 to +70C, VDD = 5 to ±5 Recommended Oscillation Circuit ConstantsCapacitance Ta = 25C, VDD = 0 DC Characteristics Ta = -10 to +70C, VDD = 5V ±5% AC Characteristics Ta = -10 to + 70C, VDD = 5V ±5% Interrupt mode register IM0Operation Other Than Serial Transfer Serial Transfer Operation SBI Mode SCK external clock output master SBI Mode SCK internal clock output masterAC Timing Test Point excluding X1 and XT1 inputs Clock TimingTI0 Timing TWO-LINE Serial I/O Mode Serial Transfer Timing THREE-LINE Serial I/O ModeInterrupt Input Timing Serial Transfer Timing BUS Release Signal TransferCommand Signal Transfer Reset Input TimingData Retention Timing releasing Stop mode by Reset Ta = -10 to +70CBTM3 BTM2 BTM1 BTM0 Other than X1 or Program Memory Write Timing Program Memory Read TimingMD0 MD1 PIN Plastic QFP 14×20 Package DrawingsMillimeters Inches PIN Ceramic WqfnRecommended Soldering Conditions ΜPD75P308GF-3B9 80-pin plastic QFP 14 x 20 mmVPS Prom writing tools Appendix A. Development ToolsAppendix B. Related Documents Fix the input level of Cmos devices Processing of Unused Pins Cmos Devices onlyStatic Electricity ALL MOS Devices Status Before Initialization ALL MOS DevicesMemo