Texas Instruments TMS320F20x/F24x DSP manual Reading From the Flash Array, Protecting the Array

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Reading From the Flash Array

PRELIMINARY

2.8 Reading From the Flash Array

Once the array is programmed, it is read in the same manner as other memory devices on the DSP memory interface. The flash module operates with zero wait states. When you are reading the flash module, the flash segment control register (SEG_CTR) bits should be 0 and the flash array must be in the array- access mode.

2.9 Protecting the Array

After the flash memory array is programmed, it is desirable to protect the array against corruption. The flash module of the 'F20x/F24x DSPs includes several protection mechanisms to prevent unintentional modification of the array.

Flash programming is facilitated via the supply voltage connected to the VCCP pin. If this pin is grounded, the program operation will not modify the flash array. Note, that grounding the VCCP pin does not prevent the erase operation; other protection mechanisms for the erase operation are discussed below.

The control registers provide the following mechanisms for protecting the flash array from unintentional modification.

-Segment enable bits

-EXE, KEY0, and KEY1 bits

-WDATA register

An array segment is prevented from being programmed when the correspond- ing segment enable bit in the SEG_CTR is cleared to zero. Additionally, all seg- ment enable bits are cleared by reset, making unintentional programming less likely. Even if the segment enable bits are set to one, the program, erase, and flash-write operations are not initiated unless the appropriate values are set in the EXE, KEY0, and KEY1 bits of the SEG_CTR.

At the start of an operation, the KEY1 and KEY0 bits must be written in the same write access that sets EXE. When the program pulse, erase pulse, or flash-write pulse is finished, EXE must be cleared in the same write that clears KEY1 and KEY0. The data and address latches are locked whenever the EXE bit is set, and all attempts to read from or write to the array are ignored (read data is indeterminate). Once the EXE bit is set, all register bits are latched and protected. You must clear EXE to modify the SEGx bits. This protects the array from inadvertent change. Unprotected segments cannot be masked in the same register load with the deactivation of EXE. Additional security is provided by a function of the WDATA register to prevent unintentional erasure. The WDATA register must be loaded with FFFFh before the erase operation is initi- ated. If the register is not loaded with this value, the array will not be modified.

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PRELIMINARY

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Contents Literature Number SPRU282 September Important Notice Read This First Preliminary Related Documentation From Texas Instruments Preliminary If You Need Assistance Viii Contents Contents Figures Tables Introduction Basic Concepts of Flash Memory Technology TMS320F20x/F24x Flash Module ±1. TMS320 Devices With On-Chip Flash Eeprom±1. TMS320F20x/F24x Program Space Memory Maps Benefits of Embedded Flash Memory in a DSP System Preliminary Flash Operations and Control Registers TopicPreliminary Flash Operations and Control Registers ±1. Flash Memory Logic Levels During Programming and Erasing Accessing the Flash Module ±2. Memory Maps in Register and Array Access Modes 1 TMS320F206 Flash Access-Control Register2 TMS320F24x Flash Access-Control Register OUTFlash Module Control Registers Segment Control Register Segctr±3. Segment Control Register Field Descriptions Flash Test Register TST Write Address Register WadrsWrite Data Register Wdata Read Modes Program Operation Erase Operation Recovering From Over-Erasure Flash-Write Operation Reading From the Flash Array Protecting the ArrayAlgorithm Implementations Software Considerations How the Algorithms Fit Into the Program-Erase-Reprogram Flow ±1. Algorithms in the Overall Flow Programming or Clear Algorithm ±2. The Programming Algorithm in the Overall FlowPreliminary ±3. Programming or Clear Algorithm Flow Step Action Description Mask the data to program Preliminary Erase Algorithm ±4. Erase Algorithm in the Overall Flow±2. Steps for Applying One Erase Pulse Preliminary ±5. Erase Algorithm Flow Flash-Write Algorithm ±6. Flash-Write Algorithm in the Overall Flow±3. Steps for Applying One Flash-Write Pulse ±7. Flash-Write Algorithm Flow Preliminary Preliminary Assembly Source Listings Program Examples Assembly Source for Algorithms Header File for Constants and Variables, SVAR20.HBASE+0 ErrorBASE0 BASE1D7K ConstantsD5K DloopSegend Clear Algorithm, SCLR20.ASMSegst ProtectAR0 Gclr PROTECT,SEGST,SEGEND DELAY,REGS,ARRAYSplk #0,ERROR AR1Lacl Fladrs Exit Splk #1,ERRORSacl Flst NewrowShutdown Write Operation Tblw SPAD1 Execute Command LAR Activate Write BIT Tblw SPAD1 Execute Command LARSET Delay Call DELAY,*,AR6 Wait Stop Write Operation Splk Tblr FldataLacl BASE2 Tblw SPAD1 Execute Command LARPrgbyte Call SETRDVER0 Bcnd PBDONE,EQErase Algorithm, SERA20.ASM Inverse Erase Command Word Erase Command WordErase Exebin Command Word Flash Write Command WordCall Setmode Clrc OVMSacl Flend XoreraseBldd Splk #STOP,BASE0Inverase Splk #INVER,BASE0 Call Setmode Nextivers Lacl BASE1Flash Stop command, and Ffff for Wdata Flash-Write Algorithm, SFLW20.ASM Flws MaxflwBldd #FLST,BASE1 Bcnd Call Array Access Flash Array DoneCall DELAY,*,AR6 Flwrite SplkLAR AR0,#MAXFLW Cmpr Setmode Call Lacl Tblw LAR Call Call RETProgramming Algorithm, SPGM20.ASM AR4 PROTECT,DELAY,REGS,ARRAYAR3 GpgmjMask ALL Interrupts Setc Intm Globally Mask ALL Interrupts Splk #0,ERRORGpgmj Splk SUB Sacl BASE4Lacl Fladrs Newrow Rowdone Lacl FladrsBcnd DONE, GT Adjrow NEGShut Down Write Operation Tblw SPAD1 Execute Command LAR SETRDVER0 Call Regs Access Flash RegistersBcnd PBEND,EQ XOR FldataPbend RET Subroutines Used By All Four Algorithms, SUTILS20.ASM OUT SPAD2,F24XACCS OUT SPAD2,FACCESS0SPAD2,FACCESS1 Lacc Flst SUBCallable Interface to Flash Algorithms PARMS+1 GclrSEGST,SEGEND,PROTECT PARMS+2Arstack Lacl ErrorErsparams ArprotectLAR AR1,SVAR1 Sacl ErscountCall Flws 1PROTECTPopd *+ Call GpgmjSample Assembly Code to Erase and Reprogram the TMS320F206 Assembly Code for TMS320F206PARMS+1 SUB Memory Psaram Block B2Sections DLY PsaramSample C Code to Erase and Reprogram the TMS320F206 Linker Command File for TMS320F206 Sample C Code BLKB2 FLASH0FLASH1 Block B2 DsaramSample Assembly Code to Erase and Reprogram the TMS320F240 Assembly Code for TMS320F240CKCR0 RticrWdcr CKCR1Sacl Syssr LDP #DPPF1PORRST, PLLRST, Illrst SWRST, Wdrst Lacl Syssr Accl = Syssr LDP #PARMS SplkDaram LDP #PARMS Extram Linker Command File for TMS320F240 Sample Assembly CodeB0PGM Extram 0 /******Delay Subroutine Rev1.003/98 JGC Linker Command File for TMS320F240 Sample C Code Block B2 Dsram B0DATCompute Length Function for Disabling TMS320F240 Watchdog TimerLacl Wdcr Pshd Functions for Initializing the TMS320F240Sacl Wdcr SyscrSacl Wdtcr Index Assembly code SERA2x.ASM Described 10 to Margin Role in single program pulse WRITE/ERASE field Described