Texas Instruments TMS320F20x/F24x DSP manual Preliminary

Page 4

 

 

PRELIMINARY

 

 

 

 

 

 

If you are looking for in-

Turn to these locations:

 

formation about:

 

 

 

 

 

Over-erasure (depletion) and

Section 1.1, Basic Concepts of Flash Memory

 

recovery

Technology

 

 

Section 2.7, Recovering From Over-Erasure

 

 

(Flash-Write Operation)

 

 

Section 3.4, Flash-Write Algorithm

 

Programming the flash array

Section 1.1, Basic Concepts of Flash Memory

 

 

Technology

 

 

Section 2.1, Modifying the Contents of the

 

 

TMS320F20x/F24x Flash Array

 

 

Section 2.5, Program Operation

 

 

Section 3.2, Programming Algorithm

 

Sample code

Appendix A, Assembly Source Listings and

 

 

Program Examples

 

 

 

 

 

Notational Conventions

This document uses the following conventions.

-The flash EEPROM is referred to as flash memory or the flash module. The term flash array refers to the actual memory array within the flash module. The flash module includes the flash memory array and the associ- ated control circuitry.

-The DSP generation and devices are abbreviated as follows:

￿TMS320F20x/24x generation: 'F20x/24x

￿TMS320F20x devices: 'F20x

￿TMS320F24x devices: 'F24x

-Program listings and code examples are shown in a special type- face.

Here is a sample program listing:

0011

0005

0001

.field

1, 2

0012

0005

0003

.field

3,

4

0013

0005

0006

.field

6,

3

0014

0006

 

.even

 

 

iv

PRELIMINARY

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Contents Literature Number SPRU282 September Important Notice Read This First Preliminary Related Documentation From Texas Instruments Preliminary If You Need Assistance Viii Contents Contents Figures Tables Introduction Basic Concepts of Flash Memory Technology TMS320F20x/F24x Flash Module ±1. TMS320 Devices With On-Chip Flash Eeprom±1. TMS320F20x/F24x Program Space Memory Maps Benefits of Embedded Flash Memory in a DSP System Preliminary Flash Operations and Control Registers TopicPreliminary Flash Operations and Control Registers ±1. Flash Memory Logic Levels During Programming and Erasing Accessing the Flash Module ±2. Memory Maps in Register and Array Access Modes 1 TMS320F206 Flash Access-Control Register2 TMS320F24x Flash Access-Control Register OUTFlash Module Control Registers Segment Control Register Segctr±3. Segment Control Register Field Descriptions Flash Test Register TST Write Address Register WadrsWrite Data Register Wdata Read Modes Program Operation Erase Operation Recovering From Over-Erasure Flash-Write Operation Reading From the Flash Array Protecting the ArrayAlgorithm Implementations Software Considerations How the Algorithms Fit Into the Program-Erase-Reprogram Flow ±1. Algorithms in the Overall Flow Programming or Clear Algorithm ±2. The Programming Algorithm in the Overall FlowPreliminary ±3. Programming or Clear Algorithm Flow Step Action Description Mask the data to program Preliminary Erase Algorithm ±4. Erase Algorithm in the Overall Flow±2. Steps for Applying One Erase Pulse Preliminary ±5. Erase Algorithm Flow Flash-Write Algorithm ±6. Flash-Write Algorithm in the Overall Flow±3. Steps for Applying One Flash-Write Pulse ±7. Flash-Write Algorithm Flow Preliminary Preliminary Assembly Source Listings Program Examples Assembly Source for Algorithms Header File for Constants and Variables, SVAR20.HError BASE0BASE+0 BASE1Constants D5KD7K DloopClear Algorithm, SCLR20.ASM SegstSegend ProtectGclr PROTECT,SEGST,SEGEND DELAY,REGS,ARRAY Splk #0,ERRORAR0 AR1Exit Splk #1,ERROR Sacl FlstLacl Fladrs NewrowActivate Write BIT Tblw SPAD1 Execute Command LAR SET Delay Call DELAY,*,AR6 Wait Stop Write Operation SplkShutdown Write Operation Tblw SPAD1 Execute Command LAR Tblr FldataTblw SPAD1 Execute Command LAR Prgbyte Call SETRDVER0Lacl BASE2 Bcnd PBDONE,EQErase Algorithm, SERA20.ASM Erase Command Word Erase Exebin Command WordInverse Erase Command Word Flash Write Command WordClrc OVM Sacl FlendCall Setmode XoreraseSplk #STOP,BASE0 Inverase Splk #INVER,BASE0 Call SetmodeBldd Nextivers Lacl BASE1Flash Stop command, and Ffff for Wdata Flash-Write Algorithm, SFLW20.ASM Flws MaxflwBldd #FLST,BASE1 Call Array Access Flash Array Done Call DELAY,*,AR6Bcnd Flwrite SplkLAR AR0,#MAXFLW Cmpr Setmode Call Lacl Tblw LAR Call Call RETProgramming Algorithm, SPGM20.ASM PROTECT,DELAY,REGS,ARRAY AR3AR4 GpgmjSetc Intm Globally Mask ALL Interrupts Splk #0,ERROR Gpgmj SplkMask ALL Interrupts SUB Sacl BASE4Rowdone Lacl Fladrs Bcnd DONE, GTLacl Fladrs Newrow Adjrow NEGShut Down Write Operation Tblw SPAD1 Execute Command LAR SETRDVER0 Call Regs Access Flash RegistersBcnd PBEND,EQ XOR FldataPbend RET Subroutines Used By All Four Algorithms, SUTILS20.ASM OUT SPAD2,FACCESS0 SPAD2,FACCESS1OUT SPAD2,F24XACCS Lacc Flst SUBCallable Interface to Flash Algorithms Gclr SEGST,SEGEND,PROTECTPARMS+1 PARMS+2Lacl Error ErsparamsArstack ArprotectSacl Erscount Call FlwsLAR AR1,SVAR1 1PROTECTPopd *+ Call GpgmjSample Assembly Code to Erase and Reprogram the TMS320F206 Assembly Code for TMS320F206PARMS+1 SUB Memory Block B2 SectionsPsaram DLY PsaramSample C Code to Erase and Reprogram the TMS320F206 Linker Command File for TMS320F206 Sample C Code FLASH0 FLASH1BLKB2 Block B2 DsaramSample Assembly Code to Erase and Reprogram the TMS320F240 Assembly Code for TMS320F240Rticr WdcrCKCR0 CKCR1LDP #DPPF1 PORRST, PLLRST, Illrst SWRST, Wdrst Lacl Syssr Accl = SyssrSacl Syssr LDP #PARMS SplkDaram LDP #PARMS Extram Linker Command File for TMS320F240 Sample Assembly CodeB0PGM Extram 0 /******Delay Subroutine Rev1.003/98 JGC Linker Command File for TMS320F240 Sample C Code Block B2 Dsram B0DATCompute Length Function for Disabling TMS320F240 Watchdog TimerLacl Wdcr Functions for Initializing the TMS320F240 Sacl WdcrPshd SyscrSacl Wdtcr Index Assembly code SERA2x.ASM Described 10 to Margin Role in single program pulse WRITE/ERASE field Described