Texas Instruments TMS320F20x/F24x DSP manual Step Action Description

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PRELIMINARY

Programming (or Clear) Algorithm

Another important consideration is the total amount of time required to do the programming. The number of programming pulses required to completely pro- gram a flash memory cell increases as ambient temperature increases and/or supply voltage decreases. More programming pulses are required when the minimum supply voltage is used than when the nominal or maximum supply voltage is used. The number of program pulses required also increases throughout the life of the device, as more program-erase cycles are carried out. The device data sheet specifies the maximum number of program pulses under all operating conditions; use this number when you calculate the maxi- mum amount of time required for programming.

The algorithm incorporates the steps for applying a program pulse (outlined in Table 3±1) along with some other techniques to ensure margin. In general, not all flash bits require the same number of program pulses to reach the pro- grammed margin level. For this reason, the programming algorithm applies a series of short program pulses until the memory location is programmed. How- ever, to understand how the series of program pulses works, you must first un- derstand how the algorithm applies a single program pulse. Table 3±1 outlines the steps involved in verifying programmed bits and applying a single pulse to each of the upper and lower bytes of a single location. This process corre- sponds to the steps enclosed in the dashed box in the flowchart in Figure 3±3.

Table 3±1. Steps for Verifying Programmed Bits and Applying One Program or Clear Pulse

Step

Action

Description

 

 

 

 

 

 

1

Power up the VCCP pin.

Set the VCCP pin to VDD. If the VCCP pin for the flash module to be pro-

 

 

grammed is not set to VDD, then the array will not be programmed.

2

Activate VER0 mode.

Set the VER0 bit in SEG_CTR (load SEG_CTR with 0010h).

 

 

 

 

 

 

3

Delay for VER0 reference

The CPU executes a delay loop for the t

²

)

time period.

 

voltage stabilization.

d(VERIFY-SETUP

 

 

 

 

 

 

 

 

 

 

4

Read flash array contents for

The CPU reads the addressed location. The flash module must be in

 

verification.

array-access mode (see section 2.2, Accessing the Flash Module, page

 

 

2-5).

 

 

 

5Deactivate VER0 mode.

6Compare contents of flash location (16 bits) with de- sired data.

Clear the VER0 bit in SEG_CTR (load SEG_CTR with 0000h).

If the verification passes (i.e., if the data read in step 4 is equal to the de- sired data value), then no further program pulses are required. The flash word has been programmed with the desired data value. The program or clear function is completed and this algorithm is exited.

If the verification fails (i.e., if the data read in step 4 is not equal to the desired data value), then proceed to step 7.

PRELIMINARY

Algorithm Implementations and Software Considerations

3-7

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Contents Literature Number SPRU282 September Important Notice Read This First Preliminary Related Documentation From Texas Instruments Preliminary If You Need Assistance Viii Contents Contents Figures Tables Introduction Basic Concepts of Flash Memory Technology ±1. TMS320 Devices With On-Chip Flash Eeprom TMS320F20x/F24x Flash Module±1. TMS320F20x/F24x Program Space Memory Maps Benefits of Embedded Flash Memory in a DSP System Preliminary Topic Flash Operations and Control RegistersPreliminary Flash Operations and Control Registers ±1. Flash Memory Logic Levels During Programming and Erasing Accessing the Flash Module 1 TMS320F206 Flash Access-Control Register ±2. Memory Maps in Register and Array Access ModesOUT 2 TMS320F24x Flash Access-Control RegisterSegment Control Register Segctr Flash Module Control Registers±3. Segment Control Register Field Descriptions Write Address Register Wadrs Flash Test Register TSTWrite Data Register Wdata Read Modes Program Operation Erase Operation Recovering From Over-Erasure Flash-Write Operation Protecting the Array Reading From the Flash ArrayAlgorithm Implementations Software Considerations How the Algorithms Fit Into the Program-Erase-Reprogram Flow ±1. Algorithms in the Overall Flow ±2. The Programming Algorithm in the Overall Flow Programming or Clear AlgorithmPreliminary ±3. Programming or Clear Algorithm Flow Step Action Description Mask the data to program Preliminary ±4. Erase Algorithm in the Overall Flow Erase Algorithm±2. Steps for Applying One Erase Pulse Preliminary ±5. Erase Algorithm Flow ±6. Flash-Write Algorithm in the Overall Flow Flash-Write Algorithm±3. Steps for Applying One Flash-Write Pulse ±7. Flash-Write Algorithm Flow Preliminary Preliminary Assembly Source Listings Program Examples Header File for Constants and Variables, SVAR20.H Assembly Source for AlgorithmsBASE0 ErrorBASE+0 BASE1D5K ConstantsD7K DloopSegst Clear Algorithm, SCLR20.ASMSegend ProtectSplk #0,ERROR Gclr PROTECT,SEGST,SEGEND DELAY,REGS,ARRAYAR0 AR1Sacl Flst Exit Splk #1,ERRORLacl Fladrs NewrowSET Delay Call DELAY,*,AR6 Wait Stop Write Operation Splk Activate Write BIT Tblw SPAD1 Execute Command LARShutdown Write Operation Tblw SPAD1 Execute Command LAR Tblr FldataPrgbyte Call SETRDVER0 Tblw SPAD1 Execute Command LARLacl BASE2 Bcnd PBDONE,EQErase Algorithm, SERA20.ASM Erase Exebin Command Word Erase Command WordInverse Erase Command Word Flash Write Command WordSacl Flend Clrc OVMCall Setmode XoreraseInverase Splk #INVER,BASE0 Call Setmode Splk #STOP,BASE0Bldd Nextivers Lacl BASE1Flash Stop command, and Ffff for Wdata Flash-Write Algorithm, SFLW20.ASM Bldd #FLST,BASE1 MaxflwFlws Call DELAY,*,AR6 Call Array Access Flash Array DoneBcnd Flwrite SplkSetmode Call Lacl Tblw LAR Call Call RET LAR AR0,#MAXFLW CmprProgramming Algorithm, SPGM20.ASM AR3 PROTECT,DELAY,REGS,ARRAYAR4 GpgmjGpgmj Splk Setc Intm Globally Mask ALL Interrupts Splk #0,ERRORMask ALL Interrupts SUB Sacl BASE4Bcnd DONE, GT Rowdone Lacl FladrsLacl Fladrs Newrow Adjrow NEGSETRDVER0 Call Regs Access Flash Registers Shut Down Write Operation Tblw SPAD1 Execute Command LARPbend RET XOR FldataBcnd PBEND,EQ Subroutines Used By All Four Algorithms, SUTILS20.ASM SPAD2,FACCESS1 OUT SPAD2,FACCESS0OUT SPAD2,F24XACCS Lacc Flst SUBCallable Interface to Flash Algorithms SEGST,SEGEND,PROTECT GclrPARMS+1 PARMS+2Ersparams Lacl ErrorArstack ArprotectCall Flws Sacl ErscountLAR AR1,SVAR1 1PROTECTCall Gpgmj Popd *+Assembly Code for TMS320F206 Sample Assembly Code to Erase and Reprogram the TMS320F206PARMS+1 SUB Memory Sections Block B2Psaram DLY PsaramSample C Code to Erase and Reprogram the TMS320F206 Linker Command File for TMS320F206 Sample C Code FLASH1 FLASH0BLKB2 Block B2 DsaramAssembly Code for TMS320F240 Sample Assembly Code to Erase and Reprogram the TMS320F240Wdcr RticrCKCR0 CKCR1PORRST, PLLRST, Illrst SWRST, Wdrst Lacl Syssr Accl = Syssr LDP #DPPF1Sacl Syssr LDP #PARMS SplkDaram LDP #PARMS B0PGM Linker Command File for TMS320F240 Sample Assembly CodeExtram Extram 0 /******Delay Subroutine Rev1.003/98 JGC Linker Command File for TMS320F240 Sample C Code B0DAT Block B2 DsramLacl Wdcr Function for Disabling TMS320F240 Watchdog TimerCompute Length Sacl Wdcr Functions for Initializing the TMS320F240Pshd SyscrSacl Wdtcr Index Assembly code SERA2x.ASM Described 10 to Margin Role in single program pulse WRITE/ERASE field Described