Cypress CY7C1318CV18-167BZC, CY7C1320CV18-200BZC, CY7C1320CV18-250BZC manual Functional Overview

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CY7C1318CV18

CY7C1320CV18

Functional Overview

The CY7C1318CV18, and CY7C1320CV18 are synchronous pipelined Burst SRAMs equipped with a DDR interface, which operates with a read latency of one and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS the device behaves in DDR I mode with a read latency of one clock cycle.

Accesses are initiated on the rising edge of the positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is referenced to the rising edge of the output clocks (C/C, or K/K when in single clock mode).

All synchronous data inputs (D[x:0]) pass through input registers controlled by the rising edge of the input clocks (K and K). All synchronous data outputs (Q[x:0]) pass through output registers controlled by the rising edge of the output clocks (C/C, or K/K when in single-clock mode).

All synchronous control (R/W, LD, BWS[0:X]) inputs pass through input registers controlled by the rising edge of the input clock (K).

CY7C1318CV18 is described in the following sections. The same basic descriptions apply to CY7C1320CV18.

Read Operations

The CY7C1318CV18 is organized internally as two arrays of 512K x 18. Accesses are completed in a burst of two sequential 18-bit data words. Read operations are initiated by asserting R/W HIGH and LD LOW at the rising edge of the positive input clock (K). The address presented to address inputs is stored in the read address register and the least significant bit of the address is presented to the burst counter. The burst counter increments the address in a linear fashion. Following the next K clock rise, the corresponding 18-bit word of data from this address location is driven onto Q[17:0], using C as the output timing reference. On the subsequent rising edge of C the next 18-bit data word from the address location generated by the burst counter is driven onto Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the output clock (C or C, or K and K when in single clock mode, 200 MHz and 250 MHz device). To maintain the internal logic, each read access must be allowed to complete. Read accesses can be initiated on every rising edge of the positive input clock (K).

The CY7C1318CV18 first completes the pending read transac- tions, when read access is deselected. Synchronous internal circuitry automatically tristates the output following the next rising edge of the positive output clock (C). This enables a seamless transition between devices without the insertion of wait states in a depth expanded memory.

Write Operations

Write operations are initiated by asserting R/W LOW and LD LOW at the rising edge of the positive input clock (K). The address presented to address inputs is stored in the write address register and the least significant bit of the address is presented to the burst counter. The burst counter increments the address in a linear fashion. On the following K clock rise the data presented to D[17:0] is latched and stored into the 18-bit write data register, provided BWS[1:0] are both asserted active. On the

subsequent rising edge of the negative input clock (K) the infor- mation presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. The 36 bits of data are then written into the memory array at the specified location. Write accesses can be initiated on every rising edge of the positive input clock (K). This pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K).

When Write access is deselected, the device ignores all inputs after the pending write operations are completed.

Byte Write Operations

Byte write operations are supported by the CY7C1318CV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate Byte Write Select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the Byte Write Select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature can be used to simplify read/modify/write operations to a byte write operation.

Single Clock Mode

The CY7C1318CV18 can be used with a single clock that controls both the input and output registers. In this mode the device recognizes only a single pair of input clocks (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remain the same in this mode. To use this mode of operation, tie C and C HIGH at power on. This function is a strap option and not alterable during device operation.

DDR Operation

The CY7C1318CV18 enables high-performance operation through high clock frequencies (achieved through pipelining) and double data rate mode of operation. The CY7C1318CV18 requires a single No Operation (NOP) cycle when transitioning from a read to a write cycle. At higher frequencies, some appli- cations may require a second NOP cycle to avoid contention.

If a read occurs after a write cycle, address and data for the write are stored in registers. The write information must be stored because the SRAM cannot perform the last word write to the array without conflicting with the read. The data stays in this register until the next write cycle occurs. On the first write cycle after the read(s), the stored data from the earlier write is written into the SRAM array. This is called a posted write.

If a read is performed on the same address on which a write is performed in the previous cycle, the SRAM reads out the most current data. The SRAM does this by bypassing the memory array and reading the data from the registers.

Depth Expansion

Depth expansion requires replicating the LD control signal for each bank. All other control signals can be common between banks as appropriate.

Document Number: 001-07160 Rev. *F

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Contents Functional Description FeaturesConfigurations Selection GuideLogic Block Diagram CY7C1318CV18 Logic Block Diagram CY7C1320CV18CY7C1318CV18 1M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1320CV18 512K xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description Referenced with Respect toTDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TCK Pin for JtagFunctional Overview Echo Clocks Application ExampleProgrammable Impedance SRAM#1 ZQFirst Address External Second Address Internal Write Cycle DescriptionsOperation CommentsInto the device. D359 remains unaltered Write cycle description table for CY7C1320CV18 follows.2Device Device. D80 and D3518 remains unalteredIeee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram State diagram for the TAP controller follows.9TAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence in DDR II Sram Power Up SequenceDLL Constraints DC Electrical Characteristics Neutron Soft Error ImmunityElectrical Characteristics Maximum RatingsThermal Resistance AC Electrical CharacteristicsCapacitance Parameter Description Test Conditions Max UnitParameter Min Max Parameter Min Max Output Times DLL TimingSwitching Waveforms Read/Write/Deselect Sequence26, 27Ordering Information CY7C1320CV18-267BZXCCY7C1320CV18-167BZC Document Number 001-07160 Rev. *F Package Diagram Ball Fbga 13 x 15 x 1.4 mmDocument History Sales, Solutions, and Legal Information Worldwide Sales and Design Support Products
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