Cypress CY7C1363C, CY7C1361C manual Functional Overview, Burst Sequences, Address, = Gnd

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CY7C1361C

CY7C1363C

Functional Overview

All synchronous inputs pass through input registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCDV) is 6.5 ns (133-MHz device).

The CY7C1361C/CY7C1363C supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™ processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user-selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access.

Byte write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BWX) inputs. A Global Write Enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Selects (CE1, CE2, CE3[2]) and an asynchronous Output Enable (OE) provide for easy bank selection and output tri-state control. ADSP is ignored if CE1 is HIGH.

Single Read Accesses

A single read access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, and CE3[2] are all asserted active, and (2) ADSP or ADSC is asserted LOW (if the access is initiated by ADSC, the write inputs must be deasserted during this first cycle). The address presented to the address inputs is latched into the address register and the burst counter/control logic and presented to the memory core. If the OE input is asserted LOW, the requested data will be available at the data outputs a maximum to tCDV after clock rise. ADSP is ignored if CE1 is HIGH.

Single Write Accesses Initiated by ADSP

This access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, CE3[2] are all asserted active, and (2) ADSP is asserted LOW. The addresses presented are loaded into the address register and the burst inputs (GW, BWE, and BWX)are ignored during this first clock cycle. If the write inputs are asserted active (see Write Cycle Descriptions table for appropriate states that indicate a write) on the next clock rise, the appropriate data will be latched and written into the device.Byte writes are allowed. All I/Os are tri-stated during a byte write.Since this is a common I/O device, the asynchronous OE input signal must be deasserted and the I/Os must be tri-stated prior to the presentation of data to DQs. As a safety precaution, the data lines are tri-stated once a write cycle is detected, regardless of the state of OE.

Single Write Accesses Initiated by ADSC

This write access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, and CE3[2] are all asserted

active, (2) ADSC is asserted LOW, (3) ADSP is deasserted HIGH, and (4) the write input signals (GW, BWE, and BWX) indicate a write access. ADSC is ignored if ADSP is active LOW.

The addresses presented are loaded into the address register and the burst counter/control logic and delivered to the memory core. The information presented to DQ[A:D] will be written into the specified address location. Byte writes are allowed. All I/Os are tri-stated when a write is detected, even a byte write. Since this is a common I/O device, the asynchronous OE input signal must be deasserted and the I/Os must be tri-stated prior to the presentation of data to DQs. As a safety precaution, the data lines are tri-stated once a write cycle is detected, regardless of the state of OE.

Burst Sequences

The CY7C1361C/CY7C1363C provides an on-chip two-bit wraparound burst counter inside the SRAM. The burst counter is fed by A[1:0], and can follow either a linear or interleaved burst order. The burst order is determined by the state of the MODE input. A LOW on MODE will select a linear burst sequence. A HIGH on MODE will select an interleaved burst order. Leaving MODE unconnected will cause the device to default to a interleaved burst sequence.

Interleaved Burst Address Table (MODE = Floating or VDD)

First

Second

Third

Fourth

Address

Address

Address

Address

A1: A0

A1: A0

A1: A0

A1: A0

00

01

10

11

 

 

 

 

01

00

11

10

 

 

 

 

10

11

00

01

 

 

 

 

11

10

01

00

 

 

 

 

Linear Burst

Address

Table (MODE

= GND)

First

Second

Third

Fourth

Address

Address

Address

Address

A1: A0

A1: A0

A1: A0

A1: A0

00

01

10

11

 

 

 

 

01

10

11

00

 

 

 

 

10

11

00

01

 

 

 

 

11

00

01

10

 

 

 

 

Sleep Mode

The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CE1, CE2, CE3[2], ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW.

Document #: 38-05541 Rev. *F

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Contents Selection Guide Functional Description1 Features133 MHz 100 MHz Unit Cypress Semiconductor CorporationLogic Block Diagram CY7C1363C 512K x Logic Block Diagram CY7C1361C 256K xPin Configurations Pin Tqfp Pinout 3 Chip Enables a version CY7C1361C 256K xCY7C1363C 512K x CY7C1363C Pin Configurations Pin Tqfp Pinout 2 Chip Enables AJ VersionPin Configurations Ball BGA Pinout 2 Chip Enables with Jtag BWE Adsc ADV Pin Configurations Ball Fbga Pinout 3 Chip EnableCLK DQP BPower supply inputs to the core of the device Power supply for the I/O circuitryName Description Pin Definitions Ground for the core of the deviceGround for the I/O circuitry Functional Overview Interleaved Burst Address Table Mode = Floating or VDDBurst Sequences AddressZZ Mode Electrical Characteristics Parameter Description Test Conditions Min Max UnitAddress Cycle Description Used Truth Table for Read/Write3 Partial Truth Table for Read/Write3Function CY7C1361C Function CY7C1363CTAP Controller Block Diagram TAP Controller State DiagramIeee 1149.1 Serial Boundary Scan Jtag TAP Instruction Set Bypass RegisterParameter Min Max Unit Clock TAP TimingOutput Times Set-up Times3V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions Identification Register DefinitionsIdentification Codes Scan Register SizesRegister Name Bit Size x Instruction Code DescriptionCY7C1363C 512K x Bit # Ball ID Signal Name CY7C1361C 256K x Bit # Ball ID SignalBall BGA Boundary Scan Order NameBall Fbga Boundary Scan Order CY7C1361C 256K x Bit # Ball ID Signal NameMaximum Ratings Electrical Characteristics Over the Operating Range 13Operating Range Ambient RangeThermal Resistance Capacitance15AC Test Loads and Waveforms 3V I/O Test Load133 100 Parameter Description Unit Min Max Switching Characteristics Over the Operating Range20Read Cycle Timing22 Timing DiagramsAdsc Address GW, BWE,BWXDON’T Care Write Cycle Timing22Burst Read DON’T Care Undefined Read/Write Cycle Timing22, 24ZZ Mode Timing26 Chip Enable CY7C1363C-133AXI CY7C1361C-133AJXI Chip Enable CY7C1363C-133AXC CY7C1361C-133AJXCOrdering Information CY7C1361C-133AXCChip Enable CY7C1363C-100AXI CY7C1361C-100AJXI Chip Enable CY7C1363C-100AXC CY7C1361C-100AJXCCY7C1361C-100AXC CY7C1361C-100AXEPin Tqfp 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document History Issue Date Orig. Description of Change